Method of controlling the switched mode ion energy distribution system

• US 9,362,089 B2
• Filed: 08/28/2012
• Issued: 06/07/2016
• Est. Priority Date: 08/29/2010
• Status: Active Grant

• Current Assignee: AES Global Holdings Pte Ltd. (Advanced Energy Industries, Inc. (China))
• Original Assignee: Advanced Energy Industries Incorporated
• Inventors: Brouk, Victor, Hoffman, Daniel J., Carter, Daniel
• Primary Examiner(s): BRAYTON, JOHN JOSEPH
• Application Number:
  US13/597,050
• Publication Number:
  US 20120319584A1
• Time in Patent Office: 1,379 Days
• Field of Search: 204/192.13
• US Class Current: 1/1
• CPC Class Codes: H01J 37/32009 Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources plasma generation in general H05H1/24
• CPC Class Codes: H01J 37/32174 Circuits specially adapted for controlling the RF discharge
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01J 37/3299 Feedback systems

Abstract

Systems, methods and apparatus for regulating ion energies in a plasma chamber and chucking a substrate to a substrate support are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function (or a modified periodic voltage function) to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a defined distribution of energies of ions at the surface of the substrate so as to effectuate the defined distribution of ion energies on a time-averaged basis.

Claims

1. A method for providing a modified periodic voltage function to an electrical node, the electrical node configured for electrically-coupling to a substrate support of a plasma processing chamber, the method comprising:

obtaining an effective capacitance value, C₁, of the substrate support;

storing the effective capacitance value, C₁, in a memory;

providing an ion current compensation, I_C, to the electrical node;

providing a periodic voltage function to the electrical node, the periodic voltage function being modified by the ion current compensation, I_C, to form the modified periodic voltage function;

providing the modified periodic voltage function to the electrical node, the modified periodic voltage function having pulses and a portion between the pulses;

accessing the memory to retrieve the effective capacitance value, C₁;

determining a slope, dV₀/dt, of the portion between the pulses of the modified periodic voltage function; and

controlling a DC current source to adjust a magnitude of the ion current compensation, I_C, applied to the substrate support until

2. The method of claim 1, wherein the determining includes sampling a voltage of the portion between the pulses of the modified periodic voltage function at two or more times.

3. The method of claim 2, wherein the determining includes calculating the slope, dV₀/dt, from the voltage sampled at the two or more times.

4. The method of claim 3, wherein the determining includes calculating the slope, dV₀/dt, for two or more cycles of the modified periodic voltage function, where each of the two or more cycles is associated with a different value of the ion current compensation, I_C.

5. The method of claim 2, wherein the determining includes sampling a voltage of the portion between the pulses of the modified periodic voltage function during a first cycle and during a second cycle, and calculating the slope, dV₀/dt, from at least these two sampled voltages.

6. The method of claim 1, wherein the ion current compensation, I_C, is linearly related to an ion current, I_I, across a plasma sheath of a plasma formed in the plasma processing chamber.

7. The method of claim 1, wherein the ion current compensation, I_C, is linearly related to the ion current, I_I, according to the following equation:

8. The method of claim 7, wherein the effective capacitance, C₁, varies in time.

9. The method of claim 7, wherein the ion current compensation, I_C, varies in time.

10. The method of claim 1, further comprising providing the modified periodic voltage function to the electrical node so that ions reach the surface of the substrate with a first ion energy.

11. The method of claim 10, wherein the modified periodic voltage function has a first voltage step that corresponds to the first ion energy.

12. The method of claim 11, further comprising providing the modified periodic voltage function to the electrical node with a second value of the ion current compensation, I_C, so as to broaden the ion energy distribution function.

13. The method of claim 10, wherein the providing has negligible effect on a density of the plasma.

14. A method comprising:

applying a modified periodic voltage function to an electrical node, the modified periodic voltage function comprising a periodic voltage function modified by an ion current compensation, wherein the electrical node is configured for coupling to a substrate support coupled to a substrate in a plasma processing chamber;

sampling at least one cycle of the modified periodic voltage function to generate voltage data points;

estimating a value of a first ion energy for ions reaching a surface of the substrate, the estimating based on the voltage data points, and wherein the estimating is a function of ion current, and the ion current is a function of the ion current compensation; and

adjusting the modified periodic voltage function until the first ion energy equals a defined ion energy;

wherein the following equation is used in the estimating a value of the first ion energy;

15. The method of claim 14, further comprising sampling at least one cycle of the modified periodic voltage function and estimating the value of the first ion energy after each voltage increment of the adjusting.

16. The method of claim 14, wherein the adjusting comprises adjusting the step voltage, Δ

V, of the modified periodic voltage function until the first ion energy equals the defined ion energy.

17. The method of claim 14, further comprising changing a first value of the ion current compensation to a second value so as to broaden a width of a distribution of the ion energy.

18. The method of claim 14, wherein the adjusting comprises adjusting a bias supply voltage until the first ion energy equals the defined ion energy.

19. A non-transitory, tangible computer readable storage medium, encoded with processor readable instructions to perform a method for identifying a defined ion current compensation, I_C, the method comprising:

sampling a modified periodic voltage function given the ion current compensation, I_C, having a first value;

sampling a modified periodic voltage function given the ion current compensation, I_C, having a second value;

accessing a memory to obtain an effective capacitance, C₁, for the plasma processing chamber;

determining a slope, dV₀/dt, of the modified periodic voltage function based on the first and second sampling; and

controlling a DC current source to adjust a magnitude of ion current compensation current, I_C, applied to the substrate support until;

20. The non-transitory, tangible computer readable storage medium of claim 19, further comprising calculating a sheath voltage across a plasma sheath of a plasma of the plasma processing chamber.