Deposition of boron and carbon containing materials
First Claim
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1. A method of depositing a silicon nitride thin film comprising boron and carbon on a substrate in a reaction space comprising:
- at least one silicon nitride cycle comprising;
contacting the substrate with a vapor-phase silicon precursor;
contacting the substrate with a nitrogen reactant; and
subsequently contacting the substrate with a vapor phase boron precursor, to form a SiNx(By,Cz) thin film, wherein x is from 0.5 to 3.0, wherein y is from 0.1 to 5.0, and wherein z is from 0.1 to 5.0.
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Abstract
Methods of depositing boron and carbon containing films are provided. In some embodiments, methods of depositing B,C films with desirable properties, such as conformality and etch rate, are provided. One or more boron and/or carbon containing precursors can be decomposed on a substrate at a temperature of less than about 400° C. In some embodiments methods of depositing silicon nitride films comprising B and C are provided. A silicon nitride film can be deposited by a deposition process including an ALD cycle that forms SiN and a CVD cycle that contributes B and C to the growing film.
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Citations
30 Claims
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1. A method of depositing a silicon nitride thin film comprising boron and carbon on a substrate in a reaction space comprising:
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at least one silicon nitride cycle comprising; contacting the substrate with a vapor-phase silicon precursor; contacting the substrate with a nitrogen reactant; and subsequently contacting the substrate with a vapor phase boron precursor, to form a SiNx(By,Cz) thin film, wherein x is from 0.5 to 3.0, wherein y is from 0.1 to 5.0, and wherein z is from 0.1 to 5.0. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of depositing a silicon nitride thin film on a substrate in a reaction space comprising:
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a silicon nitride cycle comprising; contacting the substrate with a vapor-phase silicon precursor so that the silicon precursor is adsorbed to a surface of the substrate; removing excess silicon precursor and reaction byproducts from the substrate surface; contacting the adsorbed silicon precursor substrate with a nitrogen reactant; and subsequently contacting the substrate with a vapor-phase boron precursor, to form a SiNx(By,Cz) thin film, wherein x is from 0.5 to 3.0, wherein y is from 0.1 to 5.0, and wherein z is from 0.1 to 5.0, wherein the vapor-phase boron precursor decomposes on the substrate. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
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Specification