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Deposition of boron and carbon containing materials

  • US 9,362,109 B2
  • Filed: 10/15/2014
  • Issued: 06/07/2016
  • Est. Priority Date: 10/16/2013
  • Status: Active Grant
First Claim
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1. A method of depositing a silicon nitride thin film comprising boron and carbon on a substrate in a reaction space comprising:

  • at least one silicon nitride cycle comprising;

    contacting the substrate with a vapor-phase silicon precursor;

    contacting the substrate with a nitrogen reactant; and

    subsequently contacting the substrate with a vapor phase boron precursor, to form a SiNx(By,Cz) thin film, wherein x is from 0.5 to 3.0, wherein y is from 0.1 to 5.0, and wherein z is from 0.1 to 5.0.

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