Fast atomic layer etch process using an electron beam
First Claim
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1. A method of removing an overlying film comprising:
- generating a plasma in a chamber by providing an electron beam in said chamber;
coupling an RF bias voltage to a workpiece in said chamber, said workpiece comprising said overlying film;
performing a passivation process for a time duration corresponding to a desired thickness of a layer of said overlying film, said passivation process comprising;
enabling flow of plasma by-products from a remote plasma source containing a passivating gas;
setting energy of ions in said chamber to a first ion energy level less than a first minimum ion energy required for etching said overlying film;
after said time duration, halting said passivation process and performing an etching process by;
setting energy of ions in said chamber to a second ion energy level exceeding said first minimum ion energy.
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Abstract
An etch process gas is provided to a main process chamber having an electron beam plasma source, and during periodic passivation operations a remote plasma source provides passivation species to the main process chamber while ion energy is limited below an etch ion energy threshold. During periodic etch operations, flow from the remote plasma source is halted and ion energy is set above the etch threshold.
5 Citations
20 Claims
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1. A method of removing an overlying film comprising:
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generating a plasma in a chamber by providing an electron beam in said chamber; coupling an RF bias voltage to a workpiece in said chamber, said workpiece comprising said overlying film; performing a passivation process for a time duration corresponding to a desired thickness of a layer of said overlying film, said passivation process comprising; enabling flow of plasma by-products from a remote plasma source containing a passivating gas; setting energy of ions in said chamber to a first ion energy level less than a first minimum ion energy required for etching said overlying film; after said time duration, halting said passivation process and performing an etching process by; setting energy of ions in said chamber to a second ion energy level exceeding said first minimum ion energy. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of etching an overlying film, comprising:
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generating a plasma in a chamber by directing an electron beam into said chamber; coupling an RF bias voltage to a workpiece comprising said overlying film; passivating a predetermined thickness of a layer of said overlying film by enabling flow of plasma by-products to said chamber and then disabling said flow of plasma by-products to said chamber; etching said layer; during said passivating, setting energy of ions in said chamber to a first ion energy level less than a first minimum ion energy for etching said layer by tailoring a time domain waveform of said RF bias voltage to an RF waveform in which the RF voltage is at a level corresponding to said first ion energy level for a duration of at least 50% of an RF cycle of said RF waveform; during said etching, setting energy of ions in said chamber to a second ion energy level exceeding said first minimum ion energy by tailoring a time domain waveform of said RF bias voltage to an RF waveform in which the RF voltage is at a level corresponding to said second ion energy level for a duration of at least 50% of an RF cycle of said RF waveform. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A method of performing atomic layer etching on a workpiece in alternating operations of passivating and etching in a chamber, comprising:
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generating a plasma in said chamber by providing an electron beam in said chamber; during said passivating, enabling a flow to said chamber of plasma by-products comprising passivation species from a remote plasma source, and tailoring RF bias power to a waveform in which RF voltage is at a level corresponding to a first ion energy level less than an etch threshold of a deposited layer on said workpiece for a duration of at least 50% of an RF cycle of said waveform; and during said etching, halting said flow and tailoring RF bias power to a waveform in which RF voltage is at a level corresponding to a second ion energy level exceeding an etch threshold of a deposited layer on said workpiece for a duration of at least 50% of an RF cycle of said waveform.
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Specification