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Plasma treating apparatus, substrate treating method, and method of manufacturing a semiconductor device

  • US 9,362,137 B2
  • Filed: 04/23/2015
  • Issued: 06/07/2016
  • Est. Priority Date: 08/18/2014
  • Status: Active Grant
First Claim
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1. A substrate treating method comprising:

  • providing a substrate on a platform in a lower portion of an inner space of a process chamber;

    directing a first process gas upward from a first nozzle formed at an inner wall of the process chamber into an upper portion of the inner space, the first process gas being an inert gas and wherein the first nozzle is an obliquely upward-oriented nozzle structured to direct the first process gas upward;

    directing a second process gas downward from a second nozzle formed at a inner wall of the process chamber into a lower portion of the inner space, the second process gas being hydrogen gas and wherein the second nozzle is an obliquely downward-oriented nozzle structured to direct the second process gas downward; and

    applying a microwave to the upper portion of the inner space to excite the first process gas and the second process gas into plasma, and then processing the substrate.

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