Power quad flat no-lead (PQFN) semiconductor package with leadframe islands for multi-phase power inverter

• US 9,362,215 B2
• Filed: 12/10/2013
• Issued: 06/07/2016
• Est. Priority Date: 12/13/2010
• Status: Active Grant

• Current Assignee: Infineon Technologies Americas Corp. (Infineon Technologies AG)
• Original Assignee: Infineon Technologies Americas Corp. (Infineon Technologies AG)
• Inventors: Fernando, Dean, Barbosa, Roel
• Primary Examiner(s): Gumedzoe, Peniel M
• Application Number:
  US14/102,316
• Publication Number:
  US 20140091449A1
• Time in Patent Office: 910 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/29101 the principal constituent melting at a temperature of less than 400°C
• CPC Class Codes: H01L 2224/2929 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29339 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/4903 Connectors having different sizes, e.g. different diameters
• CPC Class Codes: H01L 2224/49113 the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/3107 the device being completely enclosed
• CPC Class Codes: H01L 23/49513 having bonding material between chip and die pad
• CPC Class Codes: H01L 23/4952 the additional leads being a bump or a wire
• CPC Class Codes: H01L 23/49541 : Geometry of the lead-frame
• CPC Class Codes: H01L 23/49548 : Cross section geometry H01L23/49562 takes precedence
• CPC Class Codes: H01L 23/49562 : for devices being provided for in H01L29/00
• CPC Class Codes: H01L 23/49575 : Assemblies of semiconductor devices on lead frames
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13064 : High Electron Mobility Transistor [HEMT, HFET [heterostructure FET], MODFET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/18301 : being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part
• CPC Class Codes: H01L 2924/20753 : larger or equal to 30 microns less than 40 microns
• CPC Class Codes: H01L 2924/20755 : larger or equal to 50 microns less than 60 microns
• CPC Class Codes: H01L 2924/3512 : Cracking

Abstract

According to an exemplary implementation, a power quad flat no-lead (PQFN) package includes a U-phase output node situated on a first leadframe island of a leadframe, a V-phase output node situated on a second leadframe island of said leadframe, and a W-phase output node situated on a W-phase die pad of said leadframe. The first leadframe island can be on a first leadframe strip of the leadframe, where the first leadframe strip is connected to a U-phase die pad of the leadframe. The second leadframe island can be on a second leadframe strip of the leadframe, where the second leadframe strip is connected to a V-phase die pad of the leadframe. A first W-phase power switch is situated on the W-phase die pad. Furthermore, at least one wirebond is connected to the W-phase die pad and to a source of a second W-phase power switch. The W-phase die pad can be a W-phase output terminal of the PQFN package.

Claims

1. A power quad flat no-lead (PQFN) package comprising:

a U-phase output node situated on a first leadframe island of a leadframe;

a V-phase output node situated on a second leadframe island of said leadframe;

a W-phase output node situated on a W-phase die pad of said leadframe;

wherein said first leadframe island is on a corresponding first leadframe strip, said corresponding first leadframe strip being connected to a U-phase die pad.

2. The PQFN package of claim 1, comprising a first W-phase power switch situated on said W-phase die pad.

3. The PQFN package of claim 1, comprising at least one wirebond connected to said W-phase die pad.

4. The PQFN package of claim 2, comprising at least one wirebond connecting a source of a second W-phase power switch to said W-phase die pad.

5. The PQFN package of claim 1, comprising at least one wirebond connected to said first leadframe island of said leadframe.

6. The PQFN package of claim 1, comprising at least one wirebond connected to said second leadframe island of said leadframe.

7. The PQFN package of claim 1, wherein said first leadframe island is exposed on a bottom-side of said PQFN package.

8. The PQFN package of claim 1, wherein said second leadframe island is exposed on a bottom-side of said PQFN package.

9. The PQFN package of claim 1, wherein said W-phase die pad is a W-phase output terminal of said PQFN package.

10. The PQFN package of claim 1, wherein said second leadframe island is on a corresponding second leadframe strip of said leadframe, said corresponding second leadframe strip connected to a V-phase die pad.

11. The PQFN package of claim 1, comprising a first U-phase power switch situated on a U-phase die pad of said leadframe and a first V-phase power switch situated on a V-phase die pad of said leadframe.

12. The PQFN package of claim 11, comprising a second U-phase power switch, a second V-phase power switch, and a second W-phase power switch situated on a common die pad of said leadframe.

13. The PQFN package of claim 12, wherein said U-phase, V-phase, and W-phase power switches comprise group 111-V transistors.

14. The PQFN package of claim 1, wherein said PQFN package has a footprint of greater than 12 mm by 12 mm.

15. The PQFN package of claim 1, wherein said PQFN package has a footprint of less than 12 mm by 12 mm.

16. A power quad flat no-lead (PQFN) package comprising:

a U-phase output node situated on a first leadframe island;

wherein said first leadframe island is on a corresponding first leadframe strip, said corresponding first leadframe strip being connected to a U-phase die pad;

a V-phase output node situated on a second leadframe strip of said leadframe, said second leadframe strip connected to a V-phase die pad of said leadframe;

a W-phase output node situated on a W-phase die pad of said leadframe.

17. The PQFN package of claim 16, comprising a first W-phase power switch situated on said W-phase die pad.

18. The PQFN package of claim 16, wherein said W-phase die pad is a W-phase output terminal of said PQFN package.

19. The PQFN package of claim 16, comprising at least one wirebond connected to said W-phase die pad.