Method of manufacturing a light emitting, power generating or other electronic apparatus
First Claim
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1. A method of fabricating an electronic device, the method comprising:
- depositing at least one first conductor; and
depositing a plurality of diodes suspended in a liquid or gel, each diode of the plurality of diodes comprising;
a light emitting or absorbing region having a lateral dimension between 10 microns to 40 microns and a height between 2 to 7 microns;
a first terminal coupled to the light emitting or absorbing region on a first side, the first terminal having a height less than 6 microns; and
a second terminal coupled to the light emitting or absorbing region on a second side opposite the first side, the second terminal having a height less than 6 microns;
wherein each diode of the plurality of diodes is substantially hexagonal laterally, has a lateral dimension between 10 to 50 microns measured opposing face-to-face, and a height between 5 to 25 microns.
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Abstract
An exemplary printable composition of a liquid or gel suspension of diodes comprises a plurality of diodes, a first solvent and/or a viscosity modifier. An exemplary method of fabricating an electronic device comprises: depositing one or more first conductors; and depositing a plurality of diodes suspended in a mixture of a first solvent and a viscosity modifier. Various exemplary diodes have a lateral dimension between about 10 to 50 microns and about 5 to 25 microns in height. Other embodiments may also include a plurality of substantially chemically inert particles having a range of sizes between about 10 to about 50 microns.
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Citations
22 Claims
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1. A method of fabricating an electronic device, the method comprising:
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depositing at least one first conductor; and depositing a plurality of diodes suspended in a liquid or gel, each diode of the plurality of diodes comprising; a light emitting or absorbing region having a lateral dimension between 10 microns to 40 microns and a height between 2 to 7 microns; a first terminal coupled to the light emitting or absorbing region on a first side, the first terminal having a height less than 6 microns; and a second terminal coupled to the light emitting or absorbing region on a second side opposite the first side, the second terminal having a height less than 6 microns; wherein each diode of the plurality of diodes is substantially hexagonal laterally, has a lateral dimension between 10 to 50 microns measured opposing face-to-face, and a height between 5 to 25 microns. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method of fabricating an electronic device, the method comprising:
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depositing at least one first conductor; depositing a plurality of diodes suspended in a liquid or gel, each diode of the plurality of diodes comprising; a light emitting or absorbing region having a lateral dimension between 10 microns to 40 microns and a height between 2 to 7 microns; a first terminal coupled to the light emitting or absorbing region on a first side, the first terminal having a height less than 6 microns; and a second terminal coupled to the light emitting or absorbing region on a second side opposite the first side, the second terminal having a height less than 6 microns; wherein each diode of the plurality of diodes has a lateral dimension between 10 to 50 microns and a height between 5 to 25 microns; and wherein each diode of the plurality of diodes comprises at least one inorganic semiconductor selected from the group consisting essentially of;
silicon, gallium arsenide (GaAs), gallium nitride (GaN), GaP, InAlGaP, AlInGaAs, InGaNAs, and AlInGaSb, and mixtures or combinations thereof;depositing at least one dielectric layer; and depositing at least one second conductor over the dielectric layer. - View Dependent Claims (18, 19, 20, 21)
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22. A method of fabricating an electronic device, the method comprising:
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depositing at least one substantially optically transmissive first conductor over a substantially optically transmissive base, the at least one substantially optically transmissive first conductor comprising one or more compounds selected from the group consisting essentially of;
indium tin oxide (ITO), antimony tin oxide (ATO), polyethylene-dioxithiophene, and combinations or mixtures thereof;depositing a plurality of diodes suspended in a liquid or gel, the liquid or gel comprising a mixture of at least one solvent and at least one viscosity modifier, each diode of the plurality of diodes comprising; a light emitting or absorbing region having a lateral dimension between 10 microns to 40 microns and a height between 2 to 7 microns; a first terminal coupled to the light emitting or absorbing region on a first side, the first terminal having a height less than 6 microns; and a second terminal coupled to the light emitting or absorbing region on a second side opposite the first side, the second terminal having a height less than 6 microns; wherein each diode of the plurality of diodes has a lateral dimension between 10 to 50 microns and a height between 5 to 25 microns; and wherein each diode of the plurality of diodes comprises at least one inorganic semiconductor selected from the group consisting essentially of;
silicon, gallium arsenide (GaAs), gallium nitride (GaN), GaP, InAlGaP, AlInGaAs, InGaNAs, and AlInGaSb, and mixtures or combinations thereof;depositing at least one dielectric layer; and depositing at least one second conductor over the dielectric layer.
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Specification