Semiconductor wearable device

• US 9,362,416 B2
• Filed: 05/01/2015
• Issued: 06/07/2016
• Est. Priority Date: 07/31/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Sakata, Junichiro, Ohara, Hiroki, Kuwabara, Hideaki
• Primary Examiner(s): YUSHIN, NIKOLAY K
• Application Number:
  US14/701,616
• Publication Number:
  US 20150236167A1
• Time in Patent Office: 403 Days
• US Class Current: 1/1
• CPC Class Codes: G06F 1/163 Wearable computers, e.g. on a belt
• CPC Class Codes: H01L 21/02614 Transformation of metal, e.g. oxidation, nitridation
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 27/1222 with a particular composition, shape or crystalline structure of the active layer
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H04B 1/16 Circuits
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs

Abstract

One object is to provide a semiconductor device with a structure which enables reduction in parasitic capacitance sufficiently between wirings. In a bottom-gate type thin film transistor including a stacked layer of a first layer which is a metal thin film oxidized partly or entirely and an oxide semiconductor layer, the following oxide insulating layers are formed together: an oxide insulating layer serving as a channel protective layer which is over and in contact with a part of the oxide semiconductor layer overlapping with a gate electrode layer; and an oxide insulating layer which covers a peripheral portion and a side surface of the stacked oxide semiconductor layer.

Claims

1. A wearable device comprising:

a main body comprising a display portion, a battery, and a microphone; and

a band portion attached to the main body,

wherein the display portion comprises a transistor including a stacked oxide semiconductor layer, an insulating layer, a source electrode layer, and a drain electrode layer,

wherein the insulating layer comprises a first opening and a second opening,

wherein the source electrode layer is electrically connected to the stacked oxide semiconductor layer through the first opening,

wherein the drain electrode layer is electrically connected to the stacked oxide semiconductor layer through the second opening,

wherein a portion of the stacked oxide semiconductor layer is in contact with a portion of the insulating layer between the first opening and the second opening,

wherein the portion of the stacked oxide semiconductor layer comprises an intrinsic oxide semiconductor, and

wherein a display image of the display portion is switched by inputting a voice into the microphone.

2. The wearable device according to claim 1, wherein the stacked oxide semiconductor layer comprises indium, gallium, and zinc.

3. The wearable device according to claim 1, wherein the stacked oxide semiconductor layer comprises a crystal.

4. The wearable device according to claim 1,

wherein the display portion further comprises a pixel electrode layer, and

wherein one of the source electrode layer and the drain electrode layer is electrically connected to the pixel electrode layer.

5. The wearable device according to claim 1, wherein the main body further comprises a receiver of a television broadcast.

6. The wearable device according to claim 1, wherein the main body further comprises a GPS receiver.

7. A wearable device comprising:

a main body comprising a display portion, a battery, and a microphone; and

a band portion attached to the main body,

wherein the display portion comprises a transistor including a stacked oxide semiconductor layer, an insulating layer, a source electrode layer, and a drain electrode layer,

wherein the insulating layer comprises a first opening and a second opening,

wherein the source electrode layer is electrically connected to the stacked oxide semiconductor layer through the first opening,

wherein the drain electrode layer is electrically connected to the stacked oxide semiconductor layer through the second opening,

wherein a portion of the stacked oxide semiconductor layer is in contact with a portion of the insulating layer between the first opening and the second opening,

wherein the portion of the stacked oxide semiconductor layer comprises an intrinsic oxide semiconductor, and

wherein a display image of the display portion is switched by touching the display portion.

8. The wearable device according to claim 7, wherein the stacked oxide semiconductor layer comprises indium, gallium, and zinc.

9. The wearable device according to claim 7, wherein the stacked oxide semiconductor layer comprises a crystal.

10. The wearable device according to claim 7,

wherein the display portion further comprises a pixel electrode layer, and

wherein one of the source electrode layer and the drain electrode layer is electrically connected to the pixel electrode layer.

11. The wearable device according to claim 7, wherein the main body further comprises a receiver of a television broadcast.

12. The wearable device according to claim 7, wherein the main body further comprises a GPS receiver.

13. A watch comprising:

a main body comprising a display portion, a battery, and a microphone; and

a band portion attached to the main body,

wherein the display portion comprises a transistor including a stacked oxide semiconductor layer, an insulating layer, a source electrode layer, and a drain electrode layer,

wherein the insulating layer comprises a first opening and a second opening,

wherein the source electrode layer is electrically connected to the stacked oxide semiconductor layer through the first opening,

wherein the drain electrode layer is electrically connected to the stacked oxide semiconductor layer through the second opening,

wherein a portion of the stacked oxide semiconductor layer is in contact with a portion of the insulating layer between the first opening and the second opening,

wherein the portion of the stacked oxide semiconductor layer comprises an intrinsic oxide semiconductor, and

wherein a display image of the display portion is switched by inputting a voice into the microphone or touching the display portion.

14. The watch according to claim 13, wherein the stacked oxide semiconductor layer comprises indium, gallium, and zinc.

15. The watch according to claim 13, wherein the stacked oxide semiconductor layer comprises a crystal.

16. The watch according to claim 13,

wherein the display portion further comprises a pixel electrode layer, and

wherein one of the source electrode layer and the drain electrode layer is electrically connected to the pixel electrode layer.

17. The watch according to claim 13, wherein the main body further comprises a receiver of a television broadcast.

18. The watch according to claim 13, wherein the main body further comprises a GPS receiver.