Gallium nitride based light emitting diode
First Claim
Patent Images
1. A light emitting diode comprising:
- an un-doped GaN layer having a thickness of 1 μ
m ˜
3 μ
m;
a first conductive type semiconductor layer on the un-doped GaN layer;
at least one InxGa1−
xN layer (0<
x<
0.2) on the first conductive type semiconductor layer;
at least one GaN layer having a thickness of 10 Å
˜
30 Å
directly on the at least one InxGa1−
xN layer(0<
x<
0.2);
an active layer directly on the at least one GaN layer;
a second conductive type semiconductor layer on the active layer; and
a transparent ITO (Indium-Tin-Oxide) layer on the second conductive type semiconductor layer;
wherein the active layer comprises a well layer including an InGaN and a barrier layer including a GaN,wherein a thickness of the barrier layer is greater than a thickness of the well layer, andwherein a thickness of the at least one InxGa1−
x N layer (0<
x<
0.2) is less than a thickness of the second conductive type semiconductor layer having 750 Å
˜
1500 Å
.
1 Assignment
0 Petitions
Accused Products
Abstract
A light emitting diode includes a first conductive type semiconductor layer; at least one InxGa1−xN layer (0<x<0.2) on the first conductive type semiconductor layer; an active layer directly on the at least one InxGa1−xN layer(0<x<0.2); a second conductive type semiconductor layer on the active layer; and a transparent ITO (Indium-Tin-Oxide) layer on the second conductive type semiconductor layer. At least one period of the active layer includes at least three layers including an InGaN and a GaN. The second conductive type semiconductor layer has a thickness of 750Ř1500Å.
-
Citations
20 Claims
-
1. A light emitting diode comprising:
-
an un-doped GaN layer having a thickness of 1 μ
m ˜
3 μ
m;a first conductive type semiconductor layer on the un-doped GaN layer; at least one InxGa1−
xN layer (0<
x<
0.2) on the first conductive type semiconductor layer;at least one GaN layer having a thickness of 10 Å
˜
30 Å
directly on the at least one InxGa1−
xN layer(0<
x<
0.2);an active layer directly on the at least one GaN layer; a second conductive type semiconductor layer on the active layer; and a transparent ITO (Indium-Tin-Oxide) layer on the second conductive type semiconductor layer; wherein the active layer comprises a well layer including an InGaN and a barrier layer including a GaN, wherein a thickness of the barrier layer is greater than a thickness of the well layer, and wherein a thickness of the at least one InxGa1−
x N layer (0<
x<
0.2) is less than a thickness of the second conductive type semiconductor layer having 750 Å
˜
1500 Å
. - View Dependent Claims (2, 3, 4, 5, 6, 14, 15, 16, 17)
-
-
7. A light emitting diode comprising:
-
an un-doped GaN layer; a first conductive type semiconductor layer on the un-doped GaN layer; at least one InxGa1−
xN layer (0<
x<
0.2) on the first conductive type semiconductor layer;at least one GaN layer directly on the at least InXGa1−
xN layer (0<
x<
0.2);an active layer directly on the at least one GaN layer; a second conductive type semiconductor layer on the active layer; and a transparent ITO (Indium-Tin-Oxide) layer on the second conductive type semiconductor layer, wherein the second conductive type semiconductor layer has a thickness of 750 Å
˜
1500 Å
. - View Dependent Claims (8, 9, 10, 11, 12, 13, 18, 19, 20)
-
Specification