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Semiconductor light emitting diodes having multiple bond pads and current spreading structures

  • US 9,362,455 B2
  • Filed: 02/24/2011
  • Issued: 06/07/2016
  • Est. Priority Date: 02/24/2011
  • Status: Active Grant
First Claim
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1. A light emitting device comprising:

  • a diode region comprising a first face and opposing edges; and

    a bond pad structure comprising at least three bond pads along only one of the opposing edges of the first face without bond pads on any other opposing edges, wherein each of the at least three bond pads of the bond pad structure forms an ohmic contact with a common, electrically continuous n- or p-layer of the diode region,wherein the bond pad structure comprises current spreading fingers extending from the at least three bond pads, and at least two bond pad unit cells arranged in a row along the first face of the diode region, each bond pad unit cell comprising a bond pad and at least two of the current spreading fingers, and each of the bond pad unit cells comprises a different pattern of current spreading fingers.

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