Magnetic memory device having perpendicular magnetic tunnel junction pattern and method of forming the same
First Claim
1. A magnetic memory device, comprising:
- a pinned pattern including a coupling enhancement pattern, a polarization enhancement pattern, and a texture blocking pattern disposed between the coupling enhancement pattern and the polarization enhancement pattern;
a free pattern disposed on the polarization enhancement pattern of the pinned pattern; and
a tunnel barrier disposed between the pinned pattern and the free pattern,wherein the coupling enhancement pattern comprises a first enhancement magnetic pattern, a second enhancement magnetic pattern, and a first enhancement non-magnetic pattern disposed between the first enhancement magnetic pattern and the second enhancement magnetic pattern.
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Accused Products
Abstract
Provided are a magnetic memory device and a method of forming the same. The magnetic memory device includes a pinned pattern including a coupling enhancement pattern, a polarization enhancement pattern, and a texture blocking pattern located between the coupling enhancement pattern and the polarization enhancement pattern, a free pattern located on the polarization enhancement pattern of the pinned pattern, and a tunnel barrier located between the pinned pattern and the free pattern. The coupling enhancement pattern includes a first enhancement magnetic pattern, a second enhancement magnetic pattern, and a first enhancement non-magnetic pattern located between the first enhancement magnetic pattern and the second enhancement magnetic pattern.
90 Citations
19 Claims
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1. A magnetic memory device, comprising:
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a pinned pattern including a coupling enhancement pattern, a polarization enhancement pattern, and a texture blocking pattern disposed between the coupling enhancement pattern and the polarization enhancement pattern; a free pattern disposed on the polarization enhancement pattern of the pinned pattern; and a tunnel barrier disposed between the pinned pattern and the free pattern, wherein the coupling enhancement pattern comprises a first enhancement magnetic pattern, a second enhancement magnetic pattern, and a first enhancement non-magnetic pattern disposed between the first enhancement magnetic pattern and the second enhancement magnetic pattern. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A magnetic memory device, comprising:
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a first pinned pattern; a free pattern disposed on the first pinned pattern; a spacer disposed between the first pinned pattern and the free pattern; a first tunnel barrier disposed between the spacer and the free pattern; a coupling enhancement pattern disposed between the spacer and the first tunnel barrier; a polarization enhancement pattern disposed between the coupling enhancement pattern and the first tunnel barrier; and a texture blocking pattern disposed between the coupling enhancement pattern and the polarization enhancement pattern, wherein the coupling enhancement pattern comprises at least two interfaces disposed between a magnetic material layer and a non-magnetic material layer. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A magnetic memory device, comprising:
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a pinned pattern including a plurality of patterns; a tunnel barrier pattern disposed on the pinned pattern; and a free pattern disposed on the pinned pattern; wherein; each of at least two interfaces between the patterns of the pinned pattern comprises a magnetic material to non-magnetic material interface; the patterns of the pinned pattern comprise first and second magnetic patterns and a non-magnetic pattern; and the at least two interfaces include a first interface between the first magnetic pattern and the non-magnetic pattern and a second interface between the second magnetic pattern and the non-magnetic pattern. - View Dependent Claims (17, 18, 19)
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Specification