Semiconductor device and method of manufacturing same

• US 9,362,534 B2
• Filed: 10/15/2015
• Issued: 06/07/2016
• Est. Priority Date: 04/24/2002
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Seo, Satoshi, Kuwabara, Hideaki
• Primary Examiner(s): Trinh, Hoa B
• Application Number:
  US14/883,939
• Publication Number:
  US 20160093835A1
• Time in Patent Office: 236 Days
• Field of Search: 257/40, 257/52, 257/59, 257/72, 257/98, 257/88, 257/290, 257/79, 257/103, 257/294, 257/94, 257/99, 257/219, 438/22, 438/24, 438 26- 27, 438/29, 438/700, 438/701
• US Class Current: 1/1
• CPC Class Codes: G01J 1/4228 arrangements with two or more detectors, e.g. for sensitivity compensation
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 33/0041 characterised by field-effect operation
• CPC Class Codes: H10K 2102/3026 Top emission
• CPC Class Codes: H10K 50/81 Anodes
• CPC Class Codes: H10K 50/813 characterised by their shape
• CPC Class Codes: H10K 50/818 Reflective anodes, e.g. ITO combined with thick metallic layers
• CPC Class Codes: H10K 50/82 Cathodes
• CPC Class Codes: H10K 50/824 combined with auxiliary electrodes
• CPC Class Codes: H10K 50/828 Transparent cathodes, e.g. comprising thin metal layers
• CPC Class Codes: H10K 50/841 Self-supporting sealing arrangements
• CPC Class Codes: H10K 50/856 comprising reflective means
• CPC Class Codes: H10K 50/87 Arrangements for heating or cooling
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals
• CPC Class Codes: H10K 59/30 Devices specially adapted for multicolour light emission
• CPC Class Codes: H10K 59/35 : comprising red-green-blue [RGB] subpixels
• CPC Class Codes: H10K 59/38 : comprising colour filters or colour changing media [CCM]
• CPC Class Codes: H10K 71/00 : Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 77/10 : Substrates, e.g. flexible substrates
• CPC Class Codes: Y02E 10/549 : Organic PV cells
• CPC Class Codes: Y02P 70/50 : Manufacturing or production processes characterised by the final manufactured product

Abstract

A FET is formed on a semiconductor substrate, a curved surface having a radius of curvature is formed on an upper end of an insulation, a portion of a first electrode is exposed corresponding to the curved surface to form an inclined surface, and a region defining a luminescent region is subjected to etching to expose the first electrode. Luminescence emitted from an organic chemical compound layer is reflected by the inclined surface of the first electrode to increase a total quantity of luminescence taken out in a certain direction.

Claims

1. A method for manufacturing a display device comprising the steps of:

forming a transistor, the transistor comprising a channel formation region in a single crystal semiconductor substrate;

forming a first insulating layer over the transistor;

forming a first electrode electrically connected to the transistor over the first insulating layer;

forming a second insulating layer over the first electrode;

etching the second insulating layer and the first electrode so that the first electrode has a first region and a second region;

forming an EL layer over the first electrode and the second insulating layer; and

forming a second electrode over the EL layer,

wherein the first region of the first electrode is covered with the second insulating layer,

wherein the second region of the first electrode is exposed from the second insulating layer, and

wherein a thickness of the first region of the first electrode is larger than a thickness of the second region of the first electrode.

2. The method for manufacturing a display device according to claim 1, further comprising the step of:

forming an element separation film surrounding the channel formation region of the transistor on the single crystal semiconductor substrate,

wherein the first electrode overlaps with the element separation film.

3. The method for manufacturing a display device according to claim 2, further comprising the step of:

forming a silicon nitride film over the transistor and the element separation film before forming the first insulating layer.

4. The method for manufacturing a display device according to claim 1, further comprising the step of:

forming a driver circuit comprising a transistor whose channel formation region is in the single crystal semiconductor substrate.

5. The method for manufacturing a display device according to claim 1, further comprising the step of:

forming a silicon nitride layer over the second electrode.

6. The method for manufacturing a display device according to claim 1,

wherein the first electrode comprises a layer containing aluminum, and

wherein the layer containing aluminum is in contact with the EL layer.

7. The method for manufacturing a display device according to claim 1, wherein the EL layer is capable of emitting white light.

8. The method for manufacturing a display device according to claim 7, further comprising the step of:

providing a light-transmitting substrate and a colored layer formed on the light-transmitting substrate over the second electrode.

9. A method for manufacturing a display device, the method comprising the steps of:

forming a transistor, the transistor comprising a channel formation region in a single crystal semiconductor substrate;

forming a first insulating layer over the transistor;

forming a first electrode electrically connected to the transistor over the first insulating layer;

forming a second insulating layer over the first electrode;

etching the second insulating layer and the first electrode so that the first electrode has a depression portion;

forming an EL layer over the first electrode and the second insulating layer; and

forming a second electrode over the EL layer,

wherein the first electrode except the depression portion is covered with the second insulating layer after the step of etching the second insulating layer and the first electrode,

wherein the first electrode has a stacked structure of a layer containing titanium and a layer containing aluminum,

wherein the layer containing aluminum is in contact with the EL layer in the depression portion.

10. The method for manufacturing a display device according to claim 9, further comprising the step of:

forming an element separation film surrounding the channel formation region of the transistor on the single crystal semiconductor substrate,

wherein the first electrode overlaps with the element separation film.

11. The method for manufacturing a display device according to claim 10, further comprising the step of:

forming a silicon nitride film over the transistor and the element separation film before forming the first insulating layer.

12. The method for manufacturing a display device according to claim 9, further comprising the step of:

forming a driver circuit comprising a transistor whose channel formation region is in the single crystal semiconductor substrate.

13. The method for manufacturing a display device according to claim 9, further comprising the step of:

forming a silicon nitride layer over the second electrode.

14. The method for manufacturing a display device according to claim 9, wherein the EL layer is capable of emitting white light.

15. The method for manufacturing a display device according to claim 14, further comprising the step of:

providing a light-transmitting substrate and a colored layer formed on the light-transmitting substrate over the second electrode.

16. A method for manufacturing a display device comprising the steps of:

forming a first transistor and a second transistor, the first transistor and the second transistor each comprising a channel formation region in a single crystal semiconductor substrate;

forming a first insulating layer over the first transistor and the second transistor;

forming a first electrode over the first insulating layer;

forming a second insulating layer over the first electrode;

etching the second insulating layer and the first electrode so that the first electrode has a first region and a second region;

forming an EL layer over the first electrode and the second insulating layer; and

forming a second electrode over the EL layer,

wherein a source or a drain of the first transistor is electrically connected to a gate of the second transistor,

wherein a source or a drain of the second transistor is electrically connected to the first electrode,

wherein the first region of the first electrode is covered with the second insulating layer,

wherein the second region of the first electrode is exposed from the second insulating layer, and

wherein a thickness of the first region of the first electrode is larger than a thickness of the second region of the first electrode.

17. The method for manufacturing a display device according to claim 16, further comprising the step of:

forming an element separation film surrounding the channel formation region of the second transistor on the single crystal semiconductor substrate,

wherein the first electrode overlaps with the element separation film.

18. The method for manufacturing a display device according to claim 17, further comprising the step of:

forming a silicon nitride film over the first transistor, the second transistor and the element separation film before forming the first insulating layer.

19. The method for manufacturing a display device according to claim 16, further comprising the step of:

forming a driver circuit comprising a third transistor whose channel formation region is in the single crystal semiconductor substrate.

20. The method for manufacturing a display device according to claim 16, further comprising the step of:

forming a silicon nitride layer over the second electrode.

21. The method for manufacturing a display device according to claim 16,

wherein the first electrode comprises a layer containing aluminum, and

wherein the layer containing aluminum is in contact with the EL layer.

22. The method for manufacturing a display device according to claim 16, wherein the EL layer is capable of emitting white light.

23. The method for manufacturing a display device according to claim 22, further comprising the step of:

providing a light-transmitting substrate and a colored layer formed on the light-transmitting substrate over the second electrode.