Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material
First Claim
1. A method for manufacturing a gallium and nitrogen containing laser diode device, the method comprising:
- providing a gallium and nitrogen containing substrate having a surface region;
forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising of at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region;
patterning the epitaxial material to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width;
transferring at least a portion of the plurality of dice to a carrier wafer such that each pair of transferred dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch and corresponding to the design width, the transferring comprising;
selectively removing at least a portion of a release region of one or more die while leaving an anchor region intact between the one or more die and the gallium and nitrogen containing substrate,selectively bonding the one or more die to the carrier wafer, andreleasing the one or more die from the gallium and nitrogen containing substrate by separating the anchor region associated with each of the one or more die while a portion of the epitaxial material remains bonded to the carrier wafer.
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Accused Products
Abstract
In an example, the present invention provides a method for manufacturing a gallium and nitrogen containing laser diode device. The method includes providing a gallium and nitrogen containing substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising of at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The method includes patterning the epitaxial material to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. The method includes transferring each of the plurality of dice to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch corresponding to the design width.
251 Citations
26 Claims
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1. A method for manufacturing a gallium and nitrogen containing laser diode device, the method comprising:
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providing a gallium and nitrogen containing substrate having a surface region; forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising of at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region; patterning the epitaxial material to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width; transferring at least a portion of the plurality of dice to a carrier wafer such that each pair of transferred dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch and corresponding to the design width, the transferring comprising; selectively removing at least a portion of a release region of one or more die while leaving an anchor region intact between the one or more die and the gallium and nitrogen containing substrate, selectively bonding the one or more die to the carrier wafer, and releasing the one or more die from the gallium and nitrogen containing substrate by separating the anchor region associated with each of the one or more die while a portion of the epitaxial material remains bonded to the carrier wafer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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Specification