Etching solution for copper/molybdenum-based multilayer thin film
First Claim
1. An etching solution, comprising:
- (A) hydrogen peroxide;
(B) an inorganic acid comprising no fluorine atom;
(C) an organic acid;
(D) an amine compound having 2 to 10 carbon atoms, and comprising a first amino group and at least one selected from the group consisting of a second amino group and a hydroxyl group;
(E) an azole; and
(F) a hydrogen peroxide stabilizer,wherein the etching solution has a pH of 2.5 to 5.
1 Assignment
0 Petitions
Accused Products
Abstract
The present invention relates to an etching solution being capable of selectively etching a copper/molybdenum-based multilayer thin film with respect to a semiconductor device having an oxide semiconductor layer and a copper/molybdenum-based multilayer thin film, wherein the etching solution comprises (A) hydrogen peroxide, (B) an inorganic acid containing no fluorine atom, (C) an organic acid, (D) an amine compound having 2 to 10 carbon atoms, and having an amino group and at least one group selected from an amino group and a hydroxyl group, (E) an azole, and (F) a hydrogen peroxide stabilizer, and has a pH of 2.5 to 5, as well as an etching method using the etching solution for selectively etching a copper/molybdenum-based multilayer thin film from a semiconductor device having an oxide semiconductor layer and a copper/molybdenum-based multilayer thin film.
-
Citations
16 Claims
-
1. An etching solution, comprising:
-
(A) hydrogen peroxide; (B) an inorganic acid comprising no fluorine atom; (C) an organic acid; (D) an amine compound having 2 to 10 carbon atoms, and comprising a first amino group and at least one selected from the group consisting of a second amino group and a hydroxyl group; (E) an azole; and (F) a hydrogen peroxide stabilizer, wherein the etching solution has a pH of 2.5 to 5. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 13, 14, 15, 16)
-
-
9. An etching method for selectively etching a copper/molybdenum-based multilayer thin film of a semiconductor device comprising an oxide semiconductor layer and the copper/molybdenum-based multilayer thin film, the etching method comprising;
-
contacting the semiconductor device with an etching solution, comprising; (A) hydrogen peroxide; (B) an inorganic acid comprising no fluorine atom; (C) an organic acid; (D) an amine compound having 2 to 10 carbon atoms, and comprising a first amino group and at least one selected from the group consisting of a second amino group and a hydroxyl group; (E) an azole; and (F) a hydrogen peroxide stabilizer; wherein the etching solution has a pH of 2.5 to 5. - View Dependent Claims (10)
-
-
11. A method for producing a semiconductor device, the method comprising:
-
contacting a semiconductor device comprising an oxide semiconductor layer and a copper/molybdenum-based multilayer thin film with an etching solution, comprising; (A) hydrogen peroxide; (B) an inorganic acid comprising no fluorine atom; (C) an organic acid; (D) an amine compound having 2 to 10 carbon atoms, and comprising a first amino group and at least one selected from the group consisting of a second amino group and a hydroxyl group; (E) an azole; and (F) a hydrogen peroxide stabilizer; wherein the etching solution has a pH of 2.5 to 5. - View Dependent Claims (12)
-
Specification