Formed article, method of producing same, electronic device member, and electronic device

• US 9,365,922 B2
• Filed: 05/21/2010
• Issued: 06/14/2016
• Est. Priority Date: 05/22/2009
• Status: Active Grant

• Current Assignee: Lintec Corporation
• Original Assignee: Lintec Corporation
• Inventors: Hoshi, Shinichi, Ito, Masaharu, Uemura, Kazue, Suzuki, Yuta
• Primary Examiner(s): STACHEL, KENNETH J
• Application Number:
  US13/321,687
• Publication Number:
  US 20120101221A1
• Time in Patent Office: 2,216 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: B32B 2307/7244 Oxygen barrier
• CPC Class Codes: B32B 27/06 as the main or only constituent of a layer, which is next to another layer of the same or of a different material next to a layer of a particular substance B32B9/045; next to a bituminous or tarry layer B32B11/046; next to a water setting substance layer B32B13/12; next to a metal layer B32B15/08; next to a glass layer B32B17/10; next to a layer formed of natural mineral fibres or particles B32B19/045; next to a wood layer B32B21/08; next to a cellulosic plastic layer B32B23/08; next to a natural or synthetic rubber layer B32B25/08
• CPC Class Codes: C08J 2383/05 containing silicon bound to hydrogen
• CPC Class Codes: C08J 7/0427 with only one layer of a composition containing a polymer binder with more layers C08J7/042
• CPC Class Codes: C08J 7/043 Improving the adhesiveness of the coatings per se, e.g. forming primers adhesives in the form of films or foils characterised by the primer layers between the polymer carriers and the adhesives C09J7/50
• CPC Class Codes: C08J 7/044 Forming conductive coatings; Forming coatings having anti-static properties
• CPC Class Codes: C08J 7/048 Forming gas barrier coatings
• CPC Class Codes: C08J 7/123 Treatment by wave energy or particle radiation C08J7/18 takes precedence
• CPC Class Codes: C23C 14/48 Ion implantation
• CPC Class Codes: G02F 1/133305 Flexible substrates, e.g. plastics, organic film
• CPC Class Codes: G02F 2201/501 Blocking layers, e.g. against migration of ions
• CPC Class Codes: G02F 2201/503 Arrangements improving the resistance to shock
• CPC Class Codes: H01L 31/049 Protective back sheets
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

A formed article comprising a gas barrier layer that is formed of a material including at least an oxygen atom, a carbon atom, and a silicon atom, the gas barrier layer including an area (A) where an oxygen atom content rate gradually decreases, and a carbon atom content rate gradually increases in a depth direction from a surface, the area (A) including a partial area (A1) and a partial area (A2), the (A1) having a specific oxygen, carbon and silicon content, and the (A2) having a specific oxygen, carbon and silicon content; a method of producing the same; an electronic device member; an electronic device. The formed article exhibits an excellent gas barrier capability, excellent bendability, excellent adhesion, and excellent surface flatness.

Claims

1. A method of producing a formed article having a gas barrier layer, the method comprising:

implanting ions into a polysilane compound-containing layer containing 50 wt % or more of a polysilane compound of a formed article by a plasma ion implantation method to form the formed article having the gas barrier layer wherein said gas barrier layer is formed by said plasma ion implantation,

wherein the formed article prior to said plasma ion implantation includes the polysilane compound-containing layer in its surface,

wherein the gas barrier layer includes an area (A) where an oxygen atom content rate gradually decreases, and where a carbon atom content rate gradually increases in a depth direction from a surface,

wherein the area (A) includes a partial area (A1) and a partial area (A2), the partial area (A1) having an oxygen content rate of 20 to 55%, a carbon atom content rate of 25 to 70%, and a silicon atom content rate of 5 to 20% based on the total content rate of oxygen atoms, carbon atoms, and silicon atoms, and the partial area (A2) having an oxygen atom content rate of 1 to 15%, a carbon atom content rate of 72 to 87% and a silicon atom content rate of 7 to 18% based on the total content rate of oxygen atoms, carbon atoms and silicon atoms, and

wherein the ions are obtained by ionizing at least one as selected from the group consisting of hydrogen, nitrogen, argon, helium, neon, xenon, krypton, a silicon compound, and a hydrocarbon.

2. The method according to claim 1, wherein the formed article having the gas barrier layer has a water vapor transmission rate at a temperature of 40°

C. and a relative humidity of 90% of 0.35 g/m²/day or less.

3. The method according to claim 1, wherein the polysilane compound is a compound having a repeating unit shown by a formula (1):

4. The method according to claim 1, wherein the step of implanting ions by the plasma ion implantation method is a process of forming the ion implanted layer by implanting ions in plasma into the polysilane compound-containing layer containing 50 wt % or more of the polysilane compound by applying a negative high-voltage pulse to the formed article having the layer containing 50 wt % or more of the polysilane compound that is exposed in plasma.

5. The method according to claim 4, wherein a voltage applied when applying the negative high voltage pulse is −

1 kV to −

50 kV.

6. The method according to claim 1, wherein the step of implanting ions by the plasma ion implantation method is a process comprising implanting ions into the polysilane compound-containing layer of the formed article while feeding the formed article in a given direction.