Display device with capacitor elements
First Claim
Patent Images
1. A display device comprising:
- a first semiconductor;
a second semiconductor;
a third semiconductor, wherein the first semiconductor, the second semiconductor, and the third semiconductor are over and in contact with an insulating surface;
a gate insulating film over the first semiconductor, the second semiconductor, and the third semiconductor;
a first metal layer over the gate insulating film and the first semiconductor;
a first passivation film over the first metal layer, the second semiconductor, and the third semiconductor;
a second metal layer over the first passivation film and the third semiconductor;
a flattening film over the second metal layer and the first passivation film;
a barrier film over the flattening film;
a third metal layer over the barrier film and the first semiconductor; and
a forth metal layer over the barrier film and the second semiconductor,wherein a first opening is in the flattening film and a side face of the first opening is covered by the barrier film,wherein a second opening in a lamination is inside the first opening, the lamination having the gate insulating film, the first passivation film, and the barrier film, andwherein the third metal layer is connected to the first semiconductor via the first opening and the second opening, andthe display device comprising;
a capacitor element comprising the second semiconductor, the gate insulating film, the first passivation film, the barrier film in contact with the first passivation film, and a fourth metal layer,andwherein the third metal layer and the fourth metal layer are in contact with the barrier film.
0 Assignments
0 Petitions
Accused Products
Abstract
A structure for preventing deteriorations of a light-emitting device and retaining sufficient capacitor elements (condenser) required by each pixel is provided. A first passivation film, a second metal layer, a flattening film, a barrier film, and a third metal layer are stacked in this order over a transistor. A side face of a first opening provided with the flattening film is covered by the barrier film, a second opening is formed inside the first opening, and a third metal layer is connected to a semiconductor via the first opening and the second opening. A capacitor element that is formed of a lamination of a semiconductor of a transistor, a gate insulating film, a gate electrode, the first passivation film, and the second metal layer is provided.
321 Citations
23 Claims
-
1. A display device comprising:
-
a first semiconductor; a second semiconductor; a third semiconductor, wherein the first semiconductor, the second semiconductor, and the third semiconductor are over and in contact with an insulating surface; a gate insulating film over the first semiconductor, the second semiconductor, and the third semiconductor; a first metal layer over the gate insulating film and the first semiconductor; a first passivation film over the first metal layer, the second semiconductor, and the third semiconductor; a second metal layer over the first passivation film and the third semiconductor; a flattening film over the second metal layer and the first passivation film; a barrier film over the flattening film; a third metal layer over the barrier film and the first semiconductor; and a forth metal layer over the barrier film and the second semiconductor, wherein a first opening is in the flattening film and a side face of the first opening is covered by the barrier film, wherein a second opening in a lamination is inside the first opening, the lamination having the gate insulating film, the first passivation film, and the barrier film, and wherein the third metal layer is connected to the first semiconductor via the first opening and the second opening, and the display device comprising; a capacitor element comprising the second semiconductor, the gate insulating film, the first passivation film, the barrier film in contact with the first passivation film, and a fourth metal layer, and wherein the third metal layer and the fourth metal layer are in contact with the barrier film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
-
-
14. A display device comprising:
-
a first semiconductor; a second semiconductor; a third semiconductor, wherein the first semiconductor, the second semiconductor, and the third semiconductor are over and in contact with an insulating surface; a gate insulating film over the first semiconductor, the second semiconductor and the third semiconductor; a first metal layer over the gate insulating film and the first semiconductor; a first passivation film over the metal layer, the second semiconductor, and the third semiconductor; a second metal layer over the first passivation film and the third semiconductor; a flattening film over the second metal layer and the first passivation film; a barrier film over the flattening film; a third metal layer over the barrier film and the first semiconductor; and a forth metal layer over the barrier film and the second semiconductor, wherein a first opening is in the flattening film and a side face of the first opening is covered by the barrier film, wherein a second opening in a lamination is inside the first opening, the lamination having the gate insulating film, the first passivation film, and the barrier film, and wherein the third metal layer is connected to the first semiconductor via the first opening and the second opening, and the display device comprising; a capacitor element comprising the second semiconductor, the gate insulating film, the first passivation film, the barrier film in contact with the first passivation film, and a fourth metal layer, wherein the third metal layer and the fourth metal layer are in contact with the barrier film, wherein each of the first semiconductor, the second semiconductor and the third semiconductor comprises a source region, a drain region, and a channel forming region. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22)
-
-
23. An electronic device comprising:
-
a display device, the display device comprising; a first semiconductor; a second semiconductor; a third semiconductor, wherein the first semiconductor, the second semiconductor, and the third semiconductor are over and in contact with an insulating surface; a gate insulating film over the first semiconductor, the second semiconductor and the third semiconductor; a first metal layer over the gate insulating film and the first semiconductor; a first passivation film over the first metal layer, the second semiconductor, and the third semiconductor; a second metal layer over the first passivation film and the third semiconductor; a flattening film over the second metal layer and the first passivation film; a barrier film over the flattening film; a third metal layer over the barrier film and the first semiconductor; and a forth metal layer over the barrier film and the second semiconductor, wherein a first opening is in the flattening film and a side face of the first opening is covered by the barrier film, wherein a second opening in a lamination is inside the first opening, the lamination having the gate insulating film, the first passivation film, and the barrier film, and wherein the third metal layer is connected to the first semiconductor via the first opening and the second opening, and the display device comprising; a capacitor element comprising the second semiconductor, the gate insulating film, the first passivation film, the barrier film in contact with the first passivation film, and a fourth metal layer, and wherein the third metal layer and the fourth metal layer are in contact with the barrier film.
-
Specification
-
- Resources
Litigation Campaign Assessment
Thank you for your request. You will receive a custom alert email when the Litigation Campaign Assessment is available.
×
-
Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
-
Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
-
InventorsYamazaki, Shunpei, Takayama, Toru, Murakami, Satoshi, Kimura, Hajime
-
Primary Examiner(s)Nadav, Ori
-
Application NumberUS13/367,805Publication NumberTime in Patent Office1,589 DaysField of Search257/59, 257/72, 257/637, 257/347US Class Current1/1CPC Class CodesG02F 1/133305 Flexible substrates, e.g. p...G02F 1/136277 formed on a semiconductor s...G02F 1/1368 in which the switching elem...H05B 33/04 Sealing arrangements , e.g....H10K 2102/3026 Top emissionH10K 50/84 Passivation; Containers; En...H10K 59/12 Active-matrix OLED [AMOLED]...H10K 59/1216 the pixel elements being ca...H10K 59/124 Insulating layers formed be...H10K 59/87 Passivation; Containers; En...
