Programmable peak-current control in non-volatile memory devices

• US 9,368,214 B2
• Filed: 07/02/2014
• Issued: 06/14/2016
• Est. Priority Date: 10/03/2013
• Status: Active Grant

• Current Assignee: Apple Inc.
• Original Assignee: Apple Inc.
• Inventors: Kasorla, Yoav, Meir, Avraham Poza
• Primary Examiner(s): HIDALGO, FERNANDO N
• Application Number:
  US14/322,102
• Publication Number:
  US 20150098272A1
• Time in Patent Office: 713 Days
• Field of Search: 365/227, 365/185.24, 365/185.33, 365/129, 365/185.11, 365/226, 365/229, 365/228, 365/244
• US Class Current: 1/1
• CPC Class Codes: G06F 3/0625 Power saving in storage systems
• CPC Class Codes: G06F 3/0653 Monitoring storage devices or systems
• CPC Class Codes: G06F 3/0673 Single storage device
• CPC Class Codes: G11C 16/0483 comprising cells having several storage transistors connected in series
• CPC Class Codes: G11C 16/10 Programming or data input circuits
• CPC Class Codes: G11C 16/3422 Circuits or methods to evaluate read or write disturbance in nonvolatile memory, without steps to mitigate the problem

Abstract

A method includes, in a memory device, receiving a command that specifies a peak power consumption that is not to be exceeded by the memory device. A memory of the memory device is configured in accordance with the peak power consumption specified in the command. A data storage operation in the configured memory is performed, while complying with the specified peak power consumption.

Claims

1. A method, comprising:

in a memory device, receiving a command that specifies a peak power consumption that is not to be exceeded by the memory device, wherein the memory device includes a memory having a plurality of memory blocks;

configuring the memory dependent upon the peak power consumption specified in the command;

receiving a data storage command for a plurality of memory cells in a given memory block in the configured memory;

dividing the data storage command into a plurality of operations, wherein each of the plurality of operations is performed on a respective subset of a plurality of subsets of the plurality of memory cells; and

staggering a start of each of the plurality of operations to begin at respective different times.

2. The method according to claim 1, further comprising dividing the plurality of memory cells into the plurality of subsets by setting a number of the plurality of subsets or a size of each subset of the plurality of subsets based on the specified peak power consumption.

3. The method according to claim 1, wherein the data storage command includes a read command, and further comprising dividing the plurality of memory cells into the plurality of subsets by defining each subset of the plurality of subsets to include memory cells of the plurality of memory cells that are associated with a respective group of bit lines of the memory.

4. The method according to claim 1, wherein the data storage command includes a write command to the plurality of memory cells that are associated with a given word line of the memory, and further comprising dividing the plurality of memory cells into the plurality of subsets by defining each subset of the plurality of subsets to include memory cells of the plurality of memory cells that are associated with a respective sub-portion of the given word line.

5. The method according to claim 1, wherein the data storage command includes an erasure command of the given memory block, and further comprising dividing the plurality of memory cells into the plurality of subsets by defining each of the plurality of subsets to include the memory cells associated with a respective group of word lines in the given memory block.

6. The method according to claim 1, wherein dividing the memory cells into the subsets staggering the start of each of the plurality of operations comprises setting a delay between the respective different times based on the specified peak power consumption.

7. The method according to claim 1, further comprising alternating an order in which the plurality of operations are applied to the plurality of subsets.

8. The method according to claim 1, wherein the plurality of memory cells are arranged in strings that include respective current sources, and wherein configuring the memory comprises controlling currents produced by the current sources based on the specified peak power consumption.

9. The method according to claim 1, wherein the plurality of memory cells are programmed using an iterative programming and verification (P&

V) process, and wherein configuring the memory comprises adapting one or more parameters of the P&

V process based on the specified peak power consumption.

10. The method according to claim 9, wherein adapting the parameters of the P&

V process comprises iteratively increasing a verification threshold of the P&

V process, without inhibiting the memory cells whose stored values have exceeded the verification threshold from receiving subsequent programming pulses.

11. An apparatus, comprising:

a memory including a plurality of memory blocks; and

circuitry, which is configured to;

receive a command that specifies a peak power consumption that is not to be exceeded by the memory;

configure the memory dependent upon the peak power consumption specified in the command;

receive a data storage command for a plurality of memory cells in a given memory block of the plurality of memory blocks in the configured memory;

divide the data storage command into a plurality of operations, wherein each of the plurality of operations is performed on a respective subset of a plurality of subsets of the plurality of memory cells; and

stagger a start of each of the plurality of operations to begin at respective different times.

12. The apparatus according to claim 11, wherein the circuitry is configured to set a number of the plurality of subsets or a size of each subset of the plurality of subsets based on the specified peak power consumption.

13. The apparatus according to claim 11, wherein the data storage command includes a read command, and wherein the circuitry is further configured to define each subset of the plurality of subsets to include memory cells of the plurality of memory cells that are associated with a respective group of bit lines of the memory.

14. The apparatus according to claim 11, wherein the data storage command includes a write command to the plurality of memory cells that are associated with a given word line of the memory, and wherein the circuitry is further configured to define each subset of the plurality of subsets to include memory cells of the plurality of memory cells that are associated with a respective sub-portion of the given word line.

15. The apparatus according to claim 11, wherein the data storage command includes an erasure command of the given memory block, and wherein the circuitry is further configured to define each subset of the plurality of subsets to include memory cells of the plurality of memory cells that are associated with a respective group of word lines in the given memory block.

16. The apparatus according to claim 11, wherein the plurality of memory cells are arranged in strings that include respective current sources, and wherein the circuitry is further configured to control currents produced by the current sources based on the specified peak power consumption.

17. The apparatus according to claim 11, wherein the plurality of memory cells are programmed using an iterative programming and verification (P&

V) process, and wherein the circuitry is further configured to adapt one or more parameters of the P&

V process based on the specified peak power consumption.

18. An apparatus comprising:

a first interface, which is configured to communicate with a memory, wherein the memory includes a plurality of memory blocks;

a second interface, which is configured to communicate with a host processor; and

a memory processor, which is configured to;

receive, via the second interface, a command that specifies a peak power consumption that is not to be exceeded by the memory;

configure the memory dependent upon the peak power consumption specified in the command;

receive a data storage command for a plurality of memory cells in a given memory block of the plurality of memory blocks in the configured memory;

divide the data storage command into a plurality of operations, wherein each of the plurality of operations is performed on a respective subset of a plurality of subsets of the plurality of memory cells; and

stagger a start of each of the plurality of operations to begin at respective different times.

19. The apparatus according to claim 18, wherein the plurality of memory cells are arranged in strings that include respective current sources, and wherein the memory processor is further configured to cause the memory to control currents produced by the current sources based on the specified peak power consumption.

20. The apparatus according to claim 18, wherein the plurality of memory cells are programmed using an iterative programming and verification (P&

V) process, and wherein the memory processor is further configured to adapt one or more parameters of the P&

V process based on the specified peak power consumption.