Display device and electronic appliance

• US 9,368,516 B2
• Filed: 04/21/2015
• Issued: 06/14/2016
• Est. Priority Date: 09/13/2012
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Ho, Tu-tu
• Application Number:
  US14/692,067
• Publication Number:
  US 20150228676A1
• Time in Patent Office: 420 Days
• Field of Search: 257/43
• US Class Current: 1/1
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 59/1216 the pixel elements being capacitors

Abstract

A display device with low manufacturing cost, a display device with low power consumption, a display device capable of being formed over a large substrate, a display device with a high aperture ratio of a pixel, and a display device with high reliability are provided. The display device includes a transistor electrically connected to a light-transmitting pixel electrode and a capacitor. The transistor includes a gate electrode, a gate insulating film, and a first multilayer film including an oxide semiconductor layer. The capacitor includes the pixel electrode and a second multilayer film overlapping with the pixel electrode, positioned at a predetermined distance from the pixel electrode, and having the same layer structure as the first multilayer film. A channel formation region of the transistor is at least one layer, which is not in contact with the gate insulating film, of the first multilayer film.

Claims

1. A display device comprising:

a driver circuit comprising a transistor, the transistor comprising;

a first oxide layer;

a second oxide layer over the first oxide layer; and

a third oxide layer over the second oxide layer;

an insulating layer over the third oxide layer; and

a pixel portion comprising a liquid crystal element, the liquid crystal element comprising;

a first electrode comprising a fourth oxide layer;

the insulating layer over the first electrode;

a second electrode over the insulating layer; and

a liquid crystal layer over the first electrode and the second electrode,

wherein the third oxide layer and the fourth oxide layer are provided in the same layer, and

wherein the second oxide layer comprises a channel formation region of the transistor.

2. The display device according to claim 1, further comprising:

a gate electrode; and

a gate insulating film over the gate electrode,

wherein the second oxide layer is provided apart from the gate insulating film.

3. The display device according to claim 1, wherein the insulating layer comprises silicon nitride.

4. The display device according to claim 1, wherein the first electrode further comprises a fifth oxide layer and a sixth oxide layer.

5. The display device according to claim 1, wherein electron affinity of the second oxide layer is higher than electron affinity of the first oxide layer by 0.2 eV or more.

6. The display device according to claim 1, wherein concentration of aluminum, silicon, titanium, gallium, germanium, yttrium, zirconium, tin, lanthanum, cerium, or hafnium in the first oxide layer is 1.5 times or more as high as that in the second oxide layer.

7. The display device according to claim 1,

wherein the first oxide layer and the second oxide layer are each an In—

Ga—

Zn-based oxide,

wherein the first oxide layer has an atomic ratio of In;

Ga;

Zn=x₁;

y₁;

z₁,

wherein the second oxide layer has an atomic ratio of In;

Ga;

Zn=x₂;

y₂;

z₂, and

wherein y₁/x₁ is 1.5 times or more as large as y₂/x₂.

8. The display device according to claim 1, wherein the second oxide layer comprises a crystalline structure.

9. The display device according to claim 1, wherein one of the first electrode and the second electrode is a common electrode of the liquid crystal element.

10. An electronic appliance comprising the display device according to claim 1.

11. A display device comprising:

a driver circuit comprising a transistor, the transistor comprising;

a first oxide layer;

a second oxide layer over the first oxide layer; and

a third oxide layer over the second oxide layer,

a first insulating layer over the third oxide layer;

a second insulating layer over the first insulating layer; and

a pixel portion comprising a liquid crystal element, the liquid crystal element comprising;

a first electrode comprising a fourth oxide layer;

the first insulating layer over the first electrode;

the second insulating layer over the first insulating layer;

a second electrode in contact with the second insulating layer; and

a liquid crystal layer over the first electrode and the second electrode,

wherein the third oxide layer and the fourth oxide layer are provided in the same layer, and

wherein the second oxide layer comprises a channel formation region of the transistor.

12. The display device according to claim 11, further comprising:

a gate electrode; and

a gate insulating film over the gate electrode,

wherein the second oxide layer is provided apart from the gate insulating film.

13. The display device according to claim 11,

wherein the first insulating layer comprises silicon nitride, and

wherein the second insulating layer comprises an organic resin.

14. The display device according to claim 11, wherein the first electrode further comprises a fifth oxide layer and a sixth oxide layer.

15. The display device according to claim 11, wherein electron affinity of the second oxide layer is higher than electron affinity of the first oxide layer by 0.2 eV or more.

16. The display device according to claim 11, wherein concentration of aluminum, silicon, titanium, gallium, germanium, yttrium, zirconium, tin, lanthanum, cerium, or hafnium in the first oxide layer is 1.5 times or more as high as that in the second oxide layer.

17. The display device according to claim 11,

wherein the first oxide layer and the second oxide layer are each an In—

Ga—

Zn-based oxide,

wherein the first oxide layer has an atomic ratio of In;

Ga;

Zn=x₁;

y₁;

z₁,

wherein the second oxide layer has an atomic ratio of In;

Ga;

Zn=x₂;

y₂;

z₂, and

wherein y₁/x₁ is 1.5 times or more as large as y₂/x₂.

18. The display device according to claim 11, wherein the second oxide layer comprises a crystalline structure.

19. The display device according to claim 11, wherein one of the first electrode and the second electrode is a common electrode of the liquid crystal element.

20. An electronic appliance comprising the display device according to claim 11.