Semiconductor device and electronic appliance

• US 9,368,519 B2
• Filed: 10/24/2014
• Issued: 06/14/2016
• Est. Priority Date: 09/16/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Koyama, Jun, Umezaki, Atsushi
• Primary Examiner(s): Donovan, Lincoln
• Assistant Examiner(s): Almo, Khareem E
• Application Number:
  US14/522,817
• Publication Number:
  US 20150041807A1
• Time in Patent Office: 599 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: G09G 2310/0251 Precharge or discharge of pixel before applying new pixel voltage
• CPC Class Codes: G09G 2310/0286 Details of a shift registers arranged for use in a driving circuit
• CPC Class Codes: G09G 2310/0289 Details of voltage level shifters arranged for use in a driving circuit
• CPC Class Codes: G09G 2310/08 Details of timing specific for flat panels, other than clock recovery
• CPC Class Codes: G09G 2330/021 Power management, e.g. power saving
• CPC Class Codes: G09G 3/3674 Details of drivers for scan electrodes
• CPC Class Codes: G09G 3/3677 suitable for active matrices only
• CPC Class Codes: G11C 19/00 Digital stores in which the information is moved stepwise, e.g. shift registers
• CPC Class Codes: H01L 27/0207 Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H03K 17/687 the devices being field-effect transistors
• CPC Class Codes: H03K 19/0013 in field effect transistor circuits
• CPC Class Codes: H03K 19/018557 Coupling arrangements; Impedance matching circuits
• CPC Class Codes: H03K 19/018571 of complementary type, e.g. CMOS

Abstract

The amplitude voltage of a signal input to a level shifter can be increased and then output by the level shifter circuit. Specifically, the amplitude voltage of the signal input to the level shifter can be increased to be output. This decreases the amplitude voltage of a circuit (a shift register circuit, a decoder circuit, or the like) which outputs the signal input to the level shifter. Consequently, power consumption of the circuit can be reduced. Alternatively, a voltage applied to a transistor included in the circuit can be reduced. This can suppress degradation of the transistor or damage to the transistor.

Claims

1. A semiconductor device comprising:

a first transistor;

a second transistor;

a third transistor;

a fourth transistor;

a fifth transistor; and

a sixth transistor,

wherein a first terminal of the first transistor is electrically connected to a first wiring, and a second terminal of the first transistor is electrically connected to a second wiring,

wherein a first terminal of the second transistor is electrically connected to a third wiring, and a second terminal of the second transistor is electrically connected to the second wiring,

wherein a first terminal of the third transistor is electrically connected to the first wiring or a ninth wiring, a second terminal of the third transistor is electrically connected to a gate of the first transistor, and a gate of the third transistor is electrically connected to a fourth wiring,

wherein a first terminal of the fourth transistor is electrically connected to a seventh wiring, a second terminal of the fourth transistor is electrically connected to the gate of the first transistor, and a gate of the fourth transistor is electrically connected to a gate of the second transistor,

wherein a first terminal of the fifth transistor is electrically connected to a fifth wiring, a second terminal of the fifth transistor is electrically connected to the gate of the second transistor, and a gate of the fifth transistor is electrically connected to a sixth wiring, and

wherein a first terminal of the sixth transistor is electrically connected to an eighth wiring, a second terminal of the sixth transistor is electrically connected to the gate of the second transistor, and a gate of the sixth transistor is electrically connected to the fourth wiring.

9. The semiconductor device according to claim 1,

wherein a first signal is input to the fourth wiring,

wherein a second signal is output from the second wiring, and

wherein an amplitude voltage of the second signal is higher than an amplitude voltage of the first signal.

10. The semiconductor device according to claim 9,

wherein the first signal is a digital signal,

wherein the second signal is a digital signal,

wherein the second signal is high when the first signal is high, and

wherein the second signal is low when the first signal is low.

25. The semiconductor device according to claim 1, wherein the fourth wiring is electrically connected to a shift register circuit.

33. The semiconductor device according to claim 1, wherein the first to sixth transistors are transistors comprising an oxide semiconductor.

41. The semiconductor device according to claim 1, wherein the first to sixth transistors are transistors comprising a material selected from the group consisting of InGaZnO, SiGe, GaAs, IZO, ITO, SnO, TiO, and AlZnSnO.

49. An electronic appliance comprising the semiconductor device according to claim 1.

2. A semiconductor device comprising:

a first transistor;

a second transistor;

a third transistor;

a fourth transistor;

a fifth transistor; and

a sixth transistor,

wherein a first terminal of the first transistor is electrically connected to a first wiring, and a second terminal of the first transistor is electrically connected to a second wiring,

wherein a first terminal of the second transistor is electrically connected to a third wiring, and a second terminal of the second transistor is electrically connected to the second wiring,

wherein a first terminal of the third transistor is electrically connected to a gate of the third transistor, a second terminal of the third transistor is electrically connected to a gate of the first transistor, and the gate of the third transistor is electrically connected to a fourth wiring,

wherein a first terminal of the fourth transistor is electrically connected to the third wiring, a second terminal of the fourth transistor is electrically connected to the gate of the first transistor, and a gate of the fourth transistor is electrically connected to a gate of the second transistor,

wherein a first terminal of the fifth transistor is electrically connected to a fifth wiring, a second terminal of the fifth transistor is electrically connected to the gate of the second transistor, and a gate of the fifth transistor is electrically connected to the second terminal of the fifth transistor, and

wherein a first terminal of the sixth transistor is electrically connected to the third wiring, a second terminal of the sixth transistor is electrically connected to the gate of the second transistor, and a gate of the sixth transistor is electrically connected to the fourth wiring.

11. The semiconductor device according to claim 2,

wherein a first signal is input to the fourth wiring,

wherein a second signal is output from the second wiring, and

wherein an amplitude voltage of the second signal is higher than an amplitude voltage of the first signal.

12. The semiconductor device according to claim 11,

wherein the first signal is a digital signal,

wherein the second signal is a digital signal,

wherein the second signal is high when the first signal is high, and

wherein the second signal is low when the first signal is low.

26. The semiconductor device according to claim 2, wherein the fourth wiring is electrically connected to a shift register circuit.

34. The semiconductor device according to claim 2, wherein the first to sixth transistors are transistors comprising an oxide semiconductor.

42. The semiconductor device according to claim 2, wherein the first to sixth transistors are transistors comprising a material selected from the group consisting of InGaZnO, SiGe, GaAs, IZO, ITO, SnO, TiO, and AlZnSnO.

50. An electronic appliance comprising the semiconductor device according to claim 2.

3. A semiconductor device comprising:

a first transistor;

a second transistor;

a third transistor;

a fourth transistor;

a fifth transistor; and

a sixth transistor,

wherein a first terminal of the first transistor is electrically connected to a first wiring, and a second terminal of the first transistor is electrically connected to a second wiring,

wherein a first terminal of the second transistor is electrically connected to a third wiring, and a second terminal of the second transistor is electrically connected to the second wiring,

wherein a first terminal of the third transistor is electrically connected to a gate of the third transistor, a second terminal of the third transistor is electrically connected to a gate of the first transistor, and the gate of the third transistor is electrically connected to a fourth wiring,

wherein a first terminal of the fourth transistor is electrically connected to the third wiring, a second terminal of the fourth transistor is electrically connected to the gate of the first transistor, and a gate of the fourth transistor is electrically connected to a gate of the second transistor,

wherein a first terminal of the fifth transistor is electrically connected to the first wiring, a second terminal of the fifth transistor is electrically connected to the gate of the second transistor, and a gate of the fifth transistor is electrically connected to a sixth wiring, and

wherein a first terminal of the sixth transistor is electrically connected to the third wiring, a second terminal of the sixth transistor is electrically connected to the gate of the second transistor, and a gate of the sixth transistor is electrically connected to the fourth wiring.

13. The semiconductor device according to claim 3,

wherein a first signal is input to the fourth wiring,

wherein a second signal is output from the second wiring, and

wherein an amplitude voltage of the second signal is higher than an amplitude voltage of the first signal.

14. The semiconductor device according to claim 13,

wherein the first signal is a digital signal,

wherein the second signal is a digital signal,

wherein the second signal is high when the first signal is high, and

wherein the second signal is low when the first signal is low.

27. The semiconductor device according to claim 3, wherein the fourth wiring is electrically connected to a shift register circuit.

35. The semiconductor device according to claim 3, wherein the first to sixth transistors are transistors comprising an oxide semiconductor.

43. The semiconductor device according to claim 3, wherein the first to sixth transistors are transistors comprising a material selected from the group consisting of InGaZnO, SiGe, GaAs, IZO, ITO, SnO, TiO, and AlZnSnO.

51. An electronic appliance comprising the semiconductor device according to claim 3.

4. A semiconductor device comprising:

a first transistor;

a second transistor;

a third transistor;

a fourth transistor;

a fifth transistor; and

a sixth transistor,

wherein a first terminal of the first transistor is electrically connected to a first wiring, and a second terminal of the first transistor is electrically connected to a second wiring,

wherein a first terminal of the second transistor is electrically connected to a third wiring, and a second terminal of the second transistor is electrically connected to the second wiring,

wherein a first terminal of the third transistor is electrically connected to a gate of the third transistor, a second terminal of the third transistor is electrically connected to a gate of the first transistor, and the gate of the third transistor is electrically connected to a fourth wiring,

wherein a first terminal of the fourth transistor is electrically connected to the third wiring, a second terminal of the fourth transistor is electrically connected to the gate of the first transistor, and a gate of the fourth transistor is electrically connected to a gate of the second transistor,

wherein a first terminal of the fifth transistor is electrically connected to a fifth wiring, a second terminal of the fifth transistor is electrically connected to the gate of the second transistor, and a gate of the fifth transistor is electrically connected to the fifth wiring,

wherein a first terminal of the sixth transistor is electrically connected to the third wiring, a second terminal of the sixth transistor is electrically connected to the gate of the second transistor, and a gate of the sixth transistor is electrically connected to the fourth wiring,

wherein a channel width of the first transistor is larger than a channel width of the third transistor,

wherein a channel width of the first transistor is larger than a channel width of the fourth transistor,

wherein a channel width of the first transistor is larger than a channel width of the fifth transistor, and

wherein a channel width of the first transistor is larger than a channel width of the sixth transistor.

15. The semiconductor device according to claim 4,

wherein a first signal is input to the fourth wiring,

wherein a second signal is output from the second wiring, and

wherein an amplitude voltage of the second signal is higher than an amplitude voltage of the first signal.

16. The semiconductor device according to claim 15,

wherein the first signal is a digital signal,

wherein the second signal is a digital signal,

wherein the second signal is high when the first signal is high, and

wherein the second signal is low when the first signal is low.

28. The semiconductor device according to claim 4, wherein the fourth wiring is electrically connected to a shift register circuit.

36. The semiconductor device according to claim 4, wherein the first to sixth transistors are transistors comprising an oxide semiconductor.

44. The semiconductor device according to claim 4, wherein the first to sixth transistors are transistors comprising a material selected from the group consisting of InGaZnO, SiGe, GaAs, IZO, ITO, SnO, TiO, and AlZnSnO.

52. An electronic appliance comprising the semiconductor device according to claim 4.

5. A semiconductor device comprising:

a first transistor;

a second transistor;

a third transistor;

a fourth transistor;

a fifth transistor; and

a sixth transistor,

wherein a first terminal of the first transistor is electrically connected to a first wiring, and a second terminal of the first transistor is electrically connected to a second wiring,

wherein a first terminal of the second transistor is electrically connected to a third wiring, and a second terminal of the second transistor is electrically connected to the second wiring,

wherein a first terminal of the third transistor is electrically connected to a gate of the third transistor, a second terminal of the third transistor is electrically connected to a gate of the first transistor, and the gate of the third transistor is electrically connected to a fourth wiring,

wherein a first terminal of the fourth transistor is electrically connected to the third wiring, a second terminal of the fourth transistor is electrically connected to the gate of the first transistor, and a gate of the fourth transistor is electrically connected to a gate of the second transistor,

wherein a first terminal of the fifth transistor is electrically connected to a fifth wiring, a second terminal of the fifth transistor is electrically connected to the gate of the second transistor, and a gate of the fifth transistor is electrically connected to the first wiring, and

wherein a first terminal of the sixth transistor is electrically connected to the third wiring, a second terminal of the sixth transistor is electrically connected to the gate of the second transistor, and a gate of the sixth transistor is electrically connected to the fourth wiring.

17. The semiconductor device according to claim 5,

wherein a first signal is input to the fourth wiring,

wherein a second signal is output from the second wiring, and

wherein an amplitude voltage of the second signal is higher than an amplitude voltage of the first signal.

18. The semiconductor device according to claim 17,

wherein the first signal is a digital signal,

wherein the second signal is a digital signal,

wherein the second signal is high when the first signal is high, and

wherein the second signal is low when the first signal is low.

29. The semiconductor device according to claim 5, wherein the fourth wiring is electrically connected to a shift register circuit.

37. The semiconductor device according to claim 5, wherein the first to sixth transistors are transistors comprising an oxide semiconductor.

45. The semiconductor device according to claim 5, wherein the first to sixth transistors are transistors comprising a material selected from the group consisting of InGaZnO, SiGe, GaAs, IZO, ITO, SnO, TiO, and AlZnSnO.

53. An electronic appliance comprising the semiconductor device according to claim 5.

6. A semiconductor device comprising:

a capacitor;

a first transistor;

a second transistor;

a third transistor;

a fourth transistor;

a fifth transistor; and

a sixth transistor,

wherein a first terminal of the first transistor is electrically connected to a first wiring, and a second terminal of the first transistor is electrically connected to a second wiring,

wherein a first terminal of the second transistor is electrically connected to a third wiring, and a second terminal of the second transistor is electrically connected to the second wiring,

wherein a first terminal of the third transistor is electrically connected to the first wiring, a second terminal of the third transistor is electrically connected to a gate of the first transistor, and a gate of the third transistor is electrically connected to a fourth wiring,

wherein a first terminal of the fourth transistor is electrically connected to the third wiring, a second terminal of the fourth transistor is electrically connected to the gate of the first transistor, and a gate of the fourth transistor is electrically connected to a gate of the second transistor,

wherein a first terminal of the fifth transistor is electrically connected to a fifth wiring, a second terminal of the fifth transistor is electrically connected to the gate of the second transistor, and a gate of the fifth transistor is electrically connected to any one of the first wiring, the fifth wiring, and a sixth wiring, and

wherein a first terminal of the sixth transistor is electrically connected to the third wiring, a second terminal of the sixth transistor is electrically connected to the gate of the second transistor, and a gate of the sixth transistor is electrically connected to the fourth wiring,

wherein the capacitor is electrically connected to the gate of the second transistor and one of the first wiring, the fifth wiring, and the sixth wiring.

19. The semiconductor device according to claim 6,

wherein a first signal is input to the fourth wiring,

wherein a second signal is output from the second wiring, and

wherein an amplitude voltage of the second signal is higher than an amplitude voltage of the first signal.

20. The semiconductor device according to claim 19,

wherein the first signal is a digital signal,

wherein the second signal is a digital signal,

wherein the second signal is high when the first signal is high, and

wherein the second signal is low when the first signal is low.

30. The semiconductor device according to claim 6, wherein the fourth wiring is electrically connected to a shift register circuit.

38. The semiconductor device according to claim 6, wherein the first to sixth transistors are transistors comprising an oxide semiconductor.

46. The semiconductor device according to claim 6, wherein the first to sixth transistors are transistors comprising a material selected from the group consisting of InGaZnO, SiGe, GaAs, IZO, ITO, SnO, TiO, and AlZnSnO.

54. An electronic appliance comprising the semiconductor device according to claim 6.

7. A semiconductor device comprising:

a capacitor;

a first transistor;

a second transistor;

a third transistor;

a fourth transistor;

a fifth transistor; and

a sixth transistor,

wherein a first terminal of the first transistor is electrically connected to a first wiring, and a second terminal of the first transistor is electrically connected to a second wiring,

wherein a first terminal of the second transistor is electrically connected to a third wiring, and a second terminal of the second transistor is electrically connected to the second wiring,

wherein a first terminal of the third transistor is electrically connected to a seventh wiring or a gate of the third transistor, a second terminal of the third transistor is electrically connected to a gate of the first transistor, and the gate of the third transistor is electrically connected to a fourth wiring,

wherein a first terminal of the fourth transistor is electrically connected to the third wiring, a second terminal of the fourth transistor is electrically connected to the gate of the first transistor, and a gate of the fourth transistor is electrically connected to a gate of the second transistor,

wherein a first terminal of the fifth transistor is electrically connected to a fifth wiring, a second terminal of the fifth transistor is electrically connected to the gate of the second transistor, and a gate of the fifth transistor is electrically connected to a sixth wiring, and

wherein a first terminal of the sixth transistor is electrically connected to the third wiring, a second terminal of the sixth transistor is electrically connected to the gate of the second transistor, and a gate of the sixth transistor is electrically connected to the fourth wiring,

wherein the capacitor is electrically connected to the gate of the second transistor and one of the first wiring, the fifth wiring, and the sixth wiring.

21. The semiconductor device according to claim 7,

wherein a first signal is input to the fourth wiring,

wherein a second signal is output from the second wiring, and

wherein an amplitude voltage of the second signal is higher than an amplitude voltage of the first signal.

22. The semiconductor device according to claim 21,

wherein the first signal is a digital signal,

wherein the second signal is a digital signal,

wherein the second signal is high when the first signal is high, and

wherein the second signal is low when the first signal is low.

31. The semiconductor device according to claim 7, wherein the fourth wiring is electrically connected to a shift register circuit.

39. The semiconductor device according to claim 7, wherein the first to sixth transistors are transistors comprising an oxide semiconductor.

47. The semiconductor device according to claim 7, wherein the first to sixth transistors are transistors comprising a material selected from the group consisting of InGaZnO, SiGe, GaAs, IZO, ITO, SnO, TiO, and AlZnSnO.

55. An electronic appliance comprising the semiconductor device according to claim 7.

8. A semiconductor device comprising:

a capacitor;

a first transistor;

a second transistor;

a third transistor;

a fourth transistor;

a fifth transistor; and

a sixth transistor,

wherein a first terminal of the first transistor is electrically connected to a first wiring, and a second terminal of the first transistor is electrically connected to a second wiring,

wherein a first terminal of the second transistor is electrically connected to a third wiring, and a second terminal of the second transistor is electrically connected to the second wiring,

wherein a first terminal of the third transistor is electrically connected to a fourth wiring, a second terminal of the third transistor is electrically connected to a gate of the first transistor, and a gate of the third transistor is electrically connected to a fifth wiring,

wherein a first terminal of the fourth transistor is electrically connected to the third wiring, a second terminal of the fourth transistor is electrically connected to the gate of the first transistor, and a gate of the fourth transistor is electrically connected to a gate of the second transistor,

wherein a first terminal of the fifth transistor is electrically connected to the fifth wiring, a second terminal of the fifth transistor is electrically connected to the gate of the second transistor, and a gate of the fifth transistor is electrically connected to a sixth wiring, and

wherein a first terminal of the sixth transistor is electrically connected to the third wiring, a second terminal of the sixth transistor is electrically connected to the gate of the second transistor, and a gate of the sixth transistor is electrically connected to the fourth wiring,

wherein the capacitor is electrically connected to the gate of the second transistor and one of the first wiring, the fifth wiring, and the sixth wiring.

23. The semiconductor device according to claim 8,

wherein a first signal is input to the fourth wiring,

wherein a second signal is output from the second wiring, and

wherein an amplitude voltage of the second signal is higher than an amplitude voltage of the first signal.

24. The semiconductor device according to claim 23,

wherein the first signal is a digital signal,

wherein the second signal is a digital signal,

wherein the second signal is high when the first signal is high, and

wherein the second signal is low when the first signal is low.

32. The semiconductor device according to claim 8, wherein the fourth wiring is electrically connected to a shift register circuit.

40. The semiconductor device according to claim 8, wherein the first to sixth transistors are transistors comprising an oxide semiconductor.

48. The semiconductor device according to claim 8, wherein the first to sixth transistors are transistors comprising a material selected from the group consisting of InGaZnO, SiGe, GaAs, IZO, ITO, SnO, TiO, and AlZnSnO.

56. An electronic appliance comprising the semiconductor device according to claim 8.