Semiconductor device
First Claim
Patent Images
1. A semiconductor device comprising:
- a substrate; and
a transistor over the substrate, the transistor comprising;
a gate electrode over the substrate;
a gate insulating film over the gate electrode;
an oxide semiconductor film over the gate insulating film;
a source and a drain over the oxide semiconductor film; and
an insulating film over the oxide semiconductor film,wherein the transistor has a characteristic that an on-state current of the transistor is substantially constant in environments at −
25°
C. to 150°
C.
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Abstract
An object is to provide a highly reliable transistor and a semiconductor device including the transistor. A semiconductor device including a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film over the gate insulating film; and a source electrode and a drain electrode over the oxide semiconductor film, in which activation energy of the oxide semiconductor film obtained from temperature dependence of a current (on-state current) flowing between the source electrode and the drain electrode when a voltage greater than or equal to a threshold voltage is applied to the gate electrode is greater than or equal to 0 meV and less than or equal to 25 meV, is provided.
113 Citations
26 Claims
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1. A semiconductor device comprising:
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a substrate; and a transistor over the substrate, the transistor comprising; a gate electrode over the substrate; a gate insulating film over the gate electrode; an oxide semiconductor film over the gate insulating film; a source and a drain over the oxide semiconductor film; and an insulating film over the oxide semiconductor film, wherein the transistor has a characteristic that an on-state current of the transistor is substantially constant in environments at −
25°
C. to 150°
C. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a substrate; and a transistor over the substrate, the transistor comprising; a gate electrode over the substrate; a gate insulating film over the gate electrode; an oxide semiconductor film over the gate insulating film; a source and a drain over the oxide semiconductor film; and an insulating film over the oxide semiconductor film, wherein the transistor has a characteristic that a temperature dependence of an on-state current of the transistor is hardly observed in environments at −
25°
C. to 150°
C. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A semiconductor device comprising:
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a substrate; and a transistor over the substrate, the transistor comprising; a gate electrode over the substrate; a gate insulating film over the gate electrode; an oxide semiconductor film over the gate insulating film; a source and a drain over the oxide semiconductor film; and an insulating film over the oxide semiconductor film, wherein a value of an activation energy of the oxide semiconductor film is greater than or equal to 6.15 meV and less than or equal to 16.1 meV, and wherein the insulating film comprises silicon oxide. - View Dependent Claims (16, 17, 18, 19)
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20. A semiconductor device comprising:
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a substrate; and a transistor over the substrate, wherein the transistor comprises a gate electrode, a gate insulating film, an oxide semiconductor film, a source, a drain, and an insulating film, wherein the oxide semiconductor film and the gate electrode are overlapped with each other with the gate insulating film interposed therebetween, wherein each of the source and the drain is electrically connected to the oxide semiconductor film, wherein the insulating film is provided over the oxide semiconductor film, and wherein the transistor has a characteristic that an on-state current of the transistor is substantially constant in environments at −
25°
C. to 150°
C. - View Dependent Claims (21, 22, 23, 24, 25, 26)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsYamazaki, Shunpei, Tsuji, Takahiro, Ochiai, Teruaki, Kusunoki, Koji, Miyairi, Hidekazu
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Primary Examiner(s)Pham, Hoai V
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Application NumberUS14/541,165Publication NumberTime in Patent Office578 DaysField of Search257/59, 257/72, 257/347, 257/E29.117, 257/E29.273US Class Current1/1CPC Class CodesH01L 29/45 Ohmic electrodesH01L 29/7869 having a semiconductor body...
