×

Semiconductor light emitting device

  • US 9,368,681 B2
  • Filed: 06/26/2014
  • Issued: 06/14/2016
  • Est. Priority Date: 07/24/2001
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor light emitting device comprising:

  • an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer which are GaN-based semiconductors and formed on a primary surface of a C plane (0001) sapphire substrate, the sapphire substrate comprising a plurality of protrusions formed on the primary surface of the sapphire substrate in a two-dimensionally repeated pattern, and the protrusions having a shape of a polygon in plan view of the light emitting device, said polygon having two adjacent component sides that are perpendicular to A-axis of said GaN-based semiconductors,wherein in the plan view, an external shape of the semiconductor light emitting device is a polygon having two adjacent component sides that make the same angle as the two adjacent component sides of the protrusions.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×