Organosilane precursors for ALD/CVD silicon-containing film applications

• US 9,371,338 B2
• Filed: 07/19/2013
• Issued: 06/21/2016
• Est. Priority Date: 07/20/2012
• Status: Active Grant

• Current Assignee: American Air Liquide Incorporated (L'Air Liquide SA)
• Original Assignee: American Air Liquide Incorporated (L'Air Liquide SA)
• Inventors: Dussarrat, Christian, Kuchenbeiser, Glenn, Pallem, Venkateswara R.
• Primary Examiner(s): Gambetta, Kelly M
• Application Number:
  US14/372,105
• Publication Number:
  US 20150004317A1
• Time in Patent Office: 1,068 Days
• Field of Search: 427/248.1, 427/255.29
• US Class Current: 1/1
• CPC Class Codes: B05D 1/60 Deposition of organic layers from vapour phase vapour phase deposition in general C23C14/00, C23C16/00
• CPC Class Codes: C07F 7/025 without C-silicon linkages
• CPC Class Codes: C23C 16/30 Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• CPC Class Codes: C23C 16/345 Silicon nitride
• CPC Class Codes: C23C 16/36 Carbonitrides
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 16/402 Silicon dioxide
• CPC Class Codes: C23C 16/44 characterised by the method of coating C23C16/04 takes precedence
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD
• CPC Class Codes: H01L 21/02216 the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium

Abstract

Disclosed are Si-containing thin film forming precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel-type devices, refractory materials, or aeronautics.

Claims

1. A Si-containing thin film forming precursor having the following formula:

2. The Si-containing thin film forming precursor of claim 1, having the following formula:

3. The Si-containing thin film forming precursor of claim 2, wherein the molecule is SiH₃(NⁱPr-amd).

4. The Si-containing thin film forming precursor of claim 1, having the following formula:

5. The Si-containing thin film forming precursor of claim 1, having the following formula:

6. The Si-containing thin film forming precursor of claim 1, having the following formula:

7. A method of depositing a Si-containing layer on a substrate, the method comprising:

Introducing at least one organosilane precursor of claim 1 into a reactor having at least one substrate disposed therein;

depositing at least part of the organosilane precursor onto the at least one substrate to form a Si-containing layer using a vapor deposition method.

8. The method of claim 7, further comprising introducing into the reactor at least one co-reactant.

9. The method of claim 8, wherein the co-reactant is selected from the group consisting of P₂, O₃, H₂O, H₂O₂, NO, NO₂, a carboxylic acid, radicals thereof, and combinations thereof, preferably plasma treated oxygen or ozone.

10. The method of claim 8, wherein the co-reactant is selected from the group consisting of H₂, NH₃, (SiH₃)₃N, hydridosilanes (such as SiH₄, Si₂H₆, Si₃H₈, Si₄H₁₀, Si₅H₁₀, Si₆H₁₂), chlorosilanes and chloropolysilanes (such as SiHCl₃, SiH₂Cl₂, SiH₃Cl, Si₂Cl₆, Si₂HCl₅, Si₃Cl₈), alkysilanes (such as Me₂SiH₂, Et₂SiH₂, MeSiH₃, EtSiH₃), hydrazines (such as N₂H₄, MeHNNH₂, MeHNNHMe), organic amines (such as NMeH₂, NEtH₂, NMe₂H, NEt₂H, NMe₃, NEt₃, (SiMe₃)₂NH), pyrazoline, pyridine, B-containing molecules (such as B₂H₆, 9-borabicylo[3,3,1]none, trimethylboron, triethylboron, borazine), alkyl metals (such as trimethylaluminum, triethylaluminum, dimethylzinc, diethylzinc), radical species thereof, and mixtures thereof.

11. The method of claim 10, wherein the co-reactant is selected from the group consisting of H₂, NH₃, SiH₄, Si₂H₆, Si₃H₈, SiH₂Me₂, SiH₂Et₂, N(SiH₃)₃, hydrogen radicals thereof, and mixtures thereof.

12. The method of claim 10, wherein the co-reactant is selected from the group consisting of SiHCl₃, Si₂Cl₆, Si₂HCl₅, Si₂H₂Cl₄, and cyclo-Si₆H₆Cl₆.

13. The method of claim 7, wherein the vapor deposition process is a chemical vapor deposition process.

14. The method of claim 7, wherein the vapor deposition process is an atomic layer deposition process.

15. The method of claim 7, wherein the organosilane precursor has the following formula:

16. The method of claim 15, wherein the organosilane precursor is SiH₃(NⁱPr-amd).

17. The method of claim 7, wherein the organosilane precursor has the following formula:

18. The method of claim 7, wherein the organosilane precursor has the following formula:

19. The method of claim 7, wherein the organosilane precursor has the following formula: