Tantalum coil for sputtering and method for processing the coil

• US 9,371,578 B2
• Filed: 03/14/2011
• Issued: 06/21/2016
• Est. Priority Date: 03/29/2010
• Status: Active Grant

• Current Assignee: JX Nippon Mining & Metals Corporation (ENEOS Holdings, Inc.)
• Original Assignee: JX Nippon Mining & Metals Corporation (ENEOS Holdings, Inc.)
• Inventors: Tsukamoto, Shiro
• Primary Examiner(s): BRAYTON, JOHN JOSEPH
• Application Number:
  US13/581,843
• Publication Number:
  US 20120318668A1
• Time in Patent Office: 1,926 Days
• Field of Search: 204/298.11
• US Class Current: 1/1
• CPC Class Codes: C23C 14/34 Sputtering
• CPC Class Codes: C23C 14/3471 Introduction of auxiliary energy into the plasma
• CPC Class Codes: C23C 14/564 Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
• CPC Class Codes: H01J 37/34 operating with cathodic sputtering H01J37/36 takes precedence ; methods of cathodic sputtering C23C14/34
• CPC Class Codes: H01J 37/3447 Collimators, shutters, apertures

Abstract

Provided is a tantalum coil for sputtering disposed between a substrate and a sputtering target, wherein the tantalum coil has irregularities so that the surface roughness Rz of the tantalum coil is 150 μm or more and the number of threads is 15 to 30 TPI (Threads per inch) in a transverse direction and 10 to 30 TPI in a vertical direction. An object of the present invention is to take measures to prevent the sputtered grains accumulated on the surface of a tantalum coil from flaking so as to prevent the generation of particles and arcing that is caused by the flaking of the sputtered grains accumulated on the surface of the coil disposed between a substrate and a sputtering target, and the adhesion of the scattered flakes onto the substrate surface; and thereby to provide a technology of improving the quality and productivity of electronic components and stably providing semiconductor elements and devices.

Claims

1. A tantalum coil for sputtering disposed between a substrate and a tantalum sputtering target and having an inner and an outer circumferential surface, wherein the tantalum coil has irregularities including threads formed on the inner and outer circumferential surfaces so that the surface roughness Rz of the inner and outer circumferential surfaces of the tantalum coil is 200 μ

m or more and 300 μ

m or less and the number of threads is 15 to 30 TPI in a transverse direction and 10 to 30 TPI in a vertical direction, and wherein a thread crest R of the threads is 10 to 500 μ

m or the thread crest is provided with a flat having a width of 10 to 500 μ

m.

2. The tantalum coil for sputtering according to claim 1, wherein the surface roughness Rz is 250 μ

m or more and 300 μ

m or less.

3. A method for processing a tantalum coil for sputtering, wherein irregularities including threads are formed on inner and outer circumferential surfaces of a tantalum coil by performing knurling to the tantalum coil disposed between a substrate and a tantalum sputtering target so that the surface roughness Rz of the inner and outer circumferential surfaces of the tantalum coil is 200 μ

m or more and 300 μ

m or less and the number of threads is 15 to 30 TPI in a transverse direction and 10 to 30 TPI in a vertical direction, and wherein a thread crest R of the threads is 10 to 500 μ

m or the thread crest is provided with a flat having a width of 10 to 500 μ

m.

4. The method for processing a tantalum coil for sputtering according to claim 3, wherein the surface roughness Rz is 250 μ

m or more and 300 μ

m or less.