Method and system for forming patterns using charged particle beam lithography with variable pattern dosage
First Claim
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1. A method for fracturing or mask data preparation or proximity effect correction or optical proximity correction or mask process correction comprising the step of:
- determining a plurality of shaped beam charged particle beam shots for an exposure pass, wherein the plurality of shaped beam shots, when used in a charged particle beam writer, produces a dosage on a resist-coated surface, wherein the dosage on the resist-coated surface forms a pattern on the resist-coated surface, wherein the pattern on the surface comprises a pattern perimeter, wherein the resist comprises a resist threshold, wherein the plurality of shaped beam shots provides different dosages to different parts of the pattern, wherein the step of determining comprises calculating a dose margin from the plurality of shaped beam shots, wherein the dose margin is a slope of the resist dosage, at the resist threshold, with respect to a linear dimension perpendicular to the pattern perimeter, and wherein the step of determining is performed using one or more computing hardware processors.
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Abstract
A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where the set of shots provides different dosages to different parts of the pattern, and where the dose margin from the set of shots is calculated. A method for forming patterns on a surface is also disclosed.
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25 Claims
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1. A method for fracturing or mask data preparation or proximity effect correction or optical proximity correction or mask process correction comprising the step of:
determining a plurality of shaped beam charged particle beam shots for an exposure pass, wherein the plurality of shaped beam shots, when used in a charged particle beam writer, produces a dosage on a resist-coated surface, wherein the dosage on the resist-coated surface forms a pattern on the resist-coated surface, wherein the pattern on the surface comprises a pattern perimeter, wherein the resist comprises a resist threshold, wherein the plurality of shaped beam shots provides different dosages to different parts of the pattern, wherein the step of determining comprises calculating a dose margin from the plurality of shaped beam shots, wherein the dose margin is a slope of the resist dosage, at the resist threshold, with respect to a linear dimension perpendicular to the pattern perimeter, and wherein the step of determining is performed using one or more computing hardware processors. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for manufacturing a surface using charged particle beam lithography, the method comprising the steps of:
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determining a plurality of shaped beam shots for a plurality of exposure passes; and forming a pattern on the surface, wherein the surface has been coated with a resist, wherein a charged particle beam writer produces a dosage on the resist-coated surface using the plurality of shaped beam shots, wherein the dosage on the resist-coated surface forms the pattern, wherein the pattern on the surface comprises a pattern perimeter, wherein the resist comprises a resist threshold, wherein the plurality of shaped beam shots provides different dosages to different parts of the pattern, wherein the step of determining comprises calculating a dose margin from the plurality of shaped beam shots, and wherein the dose margin is a slope of the resist dosage, at the resist threshold, with respect to a linear dimension perpendicular to the pattern perimeter. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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19. A method for manufacturing an integrated circuit using an optical lithographic process, the optical lithographic process using a reticle manufactured with charged particle beam lithography, the method comprising the steps of:
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determining a plurality of shaped beam shots for an exposure pass; and forming a pattern on the reticle, wherein the reticle has been coated with a resist, wherein a charged particle beam writer produces a dosage on the resist-coated reticle using the plurality of shaped beam shots, wherein the dosage on the resist-coated reticle forms the pattern, wherein the pattern on the reticle comprises a pattern perimeter, wherein the resist comprises a resist threshold, wherein the plurality of shaped beam shots provides different dosages to different parts of the pattern, and wherein the step of determining comprises calculating a dose margin from the plurality of shaped beam shots, and wherein the dose margin is a slope of the resist dosage, at the resist threshold, with respect to a linear dimension perpendicular to the pattern perimeter. - View Dependent Claims (20, 21)
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22. A system for fracturing or mask data preparation or proximity effect correction or optical proximity correction or mask process correction comprising:
a device configured to determine a plurality of shaped beam charged particle beam shots for an exposure pass, wherein the plurality of shaped beam shots, when used in a charged particle beam writer, produces a dosage on a resist-coated surface, wherein the dosage on the resist-coated surface forms a pattern on the surface, wherein the pattern on the surface comprises a pattern perimeter, wherein the resist comprises a resist threshold, wherein the plurality of shaped beam shots provides different dosages to different parts of the pattern, and wherein the device configured to determine calculates a dose margin from the plurality of shaped beam shots, and wherein the dose margin is a slope of the resist dosage, at the resist threshold, with respect to a linear dimension perpendicular to the pattern perimeter. - View Dependent Claims (23, 24, 25)
Specification