Electron beam writing apparatus and electron beam writing method

• US 9,373,424 B2
• Filed: 02/15/2013
• Issued: 06/21/2016
• Est. Priority Date: 02/16/2012
• Status: Active Grant

• Current Assignee: NuFlare Technology, Inc. (Toshiba Corporation)
• Original Assignee: NuFlare Technology, Inc. (Toshiba Corporation)
• Inventors: Touya, Takanao, Nakayama, Takahito
• Primary Examiner(s): KIM, ROBERT H
• Assistant Examiner(s): Luck, Sean
• Application Number:
  US13/768,258
• Publication Number:
  US 20130216953A1
• Time in Patent Office: 1,222 Days
• US Class Current: 1/1
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: G21K 5/08 Holders for targets or for other objects to be irradiated
• CPC Class Codes: H01J 37/09 Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
• CPC Class Codes: H01J 37/12 electrostatic
• CPC Class Codes: H01J 37/3174 Particle-beam lithography, e.g. electron beam lithography

Abstract

An electron beam writing apparatus comprising a stage that a sample is placed on, an electron optical column, an electron gun emitting an electron beam disposed in the optical column, an electrostatic lens provided with electrodes aligned in an axial direction of the electron beam disposed in the optical column, and a voltage supply device for applying positive voltage constantly to the electrostatic lens. A shield plate is disposed between the XY stage and the electron optical column to block reflected electrons or secondary electrons generated by irradiation to the sample with the electron beam. The electrostatic lens is disposed immediately above the shield plate to change a focal position of the electron beam. A voltage supply device applies a positive voltage constantly to the electrostatic lens.

Claims

1. An electron beam writing apparatus comprising a control unit and a writing unit having an electron optical column and a writing chamber, comprising;

a stage on which a sample is placed in the writing unit;

an electron gun unit, which is disposed in the electron optical column, configured to emit an electron beam;

an objective lens, which is disposed in an axial direction of the electron beam in the electron optical column below the electron gun unit, configured to focus the electron beam;

a deflector disposed in the axial direction of the electron beam in the electron optical column below the objective lens, and configured to deflect the electron beam focused by the objective lens;

an electrostatic lens positioned in an axial direction of the electron beam in the electron optical column below the deflector, and configured to correct a focal position of the electron beam deflected by the deflector;

a shield plate, which is disposed between the stage and the electron optical column, configured to reduce reflected electrons or secondary electrons generated by irradiation to the sample with the electron beam from entering the electron optical column; and

wherein the electrostatic lens is disposed immediately above the shield plate and immediately below the deflector and is constantly supplied only with positive voltage, from a voltage supply device, during writing patterns on the sample, and is configured to pull the reflected electrons or secondary electrons into the electron optical column such that an electron cloud is not formed.

2. The electron beam writing apparatus according to claim 1, wherein the electrostatic lens consists of three electrodes aligned in an axial direction of the electron beam in the electron optical column;

and positive voltage is applied from the voltage supply device to the middle electrode.

3. The electron beam writing apparatus according to claim 1, wherein a positive voltage in a range between 0 V and 250 V is applied from the voltage supply device to the electrostatic lens.

4. The electron beam writing apparatus according to claim 3, wherein a positive voltage between 100 V and 200 V on average is applied from the voltage supply device to the electrostatic lens.

5. The electron beam writing apparatus according to claim 1, further comprising:

a first aperture for shaping the electron beam emitted from the electron gun;

a second aperture further shaping the electron beam that has passed through the first aperture;

an illumination lens illuminating the first aperture with the electron beam; and

a projection lens projecting the electron beam to the second aperture having passed through the first aperture

wherein the illumination lens, the projection lens, and the objective lens are all electromagnetic type lenses.

6. An electron beam writing method in which a predetermined pattern is written on a sample placed on a stage by emitting an electron beam from an electron gun disposed in an electron optical column, comprising:

focusing the electron beam using an objective lens disposed in an axial direction of the electron beam in the electron optical column below the electron gun

deflecting the electron beam focused by the objective lens using a deflector disposed in the axial direction of the electron beam in the electron optical column below the objective lens;

correcting a focal position of the electron beam deflected by the deflector using an electrostatic lens having electrodes aligned in an axial direction of the electron beam in the electron optical column below the deflector;

reducing reflected electrons or secondary electrons generated by irradiation to the sample with the electron beam from entering the electron optical column using a shield plate, which is disposed between the stage and the electron optical column;

applying a positive voltage constantly to the electrostatic lens,

wherein the electrostatic lens is disposed immediately above the shield plate and immediately below the deflector and is constantly supplied only with positive voltage during writing patterns on the sample, whereby reflected electrons or secondary electrons are pulled into the electron optical column such that an electron cloud is not formed.

7. The electron beam writing method according to claim 6,

wherein the electron beam that has been emitted from the electron gun to a first aperture is illuminated by a illumination lens;

projecting the electron beam that has passed through the first aperture to a second aperture by a projection lens;

said focusing comprising focusing the electron beam that has passed through the second aperture by the objective lens; and

irradiating the electron beam that has passed through the objective lens on the sample through the electrostatic lens.

8. The electron beam writing method according to claim 7,

wherein a positive voltage in a range between 0 V and 250 V is applied to the electrostatic lens.

9. The electron beam writing method according to claim 8,

wherein a positive voltage between 100 V and 200 V on average is applied to the electrostatic lens.