TSV structures and methods for forming the same
First Claim
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1. A device comprising:
- a substrate comprising a first surface and a second surface under the first surface;
a conductive feature extending from the first surface into the substrate, wherein the conductive feature comprises;
a conductive pad extending over the first surface of the substrate, wherein the conductive pad comprises a substantially planar top surface opposite the substrate; and
a conductive bump contacting the conductive pad, wherein the conductive bump comprises a non-planar top surface over the substantially planar top surface, and wherein the conductive bump and the conductive pad are formed of a same material.
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Abstract
A device includes a substrate having a front side and a backside, a through-via extending from the backside to the front side of the substrate, and a conductive pad on the backside of the substrate and over the through-via. The conductive pad has a substantially planar top surface. A conductive bump has a non-planar top surface over the substantially planar top surface and aligned to the through-via. The conductive bump and the conductive pad are formed of a same material. No interface is formed between the conductive bump and the conductive pad.
37 Citations
20 Claims
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1. A device comprising:
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a substrate comprising a first surface and a second surface under the first surface; a conductive feature extending from the first surface into the substrate, wherein the conductive feature comprises; a conductive pad extending over the first surface of the substrate, wherein the conductive pad comprises a substantially planar top surface opposite the substrate; and a conductive bump contacting the conductive pad, wherein the conductive bump comprises a non-planar top surface over the substantially planar top surface, and wherein the conductive bump and the conductive pad are formed of a same material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A device comprising:
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a semiconductor substrate comprising a first surface and a second surface over the first surface; a through-via extending through the semiconductor substrate from the first surface to the second surface; and a metal connector over the second surface of the semiconductor substrate and the through-via, wherein a surface of the metal connector opposite the semiconductor substrate comprises; a substantially planar portion; and a non-planar portion extending over the substantially planar portion, wherein the substantially planar portion extends laterally past the non-planar portion. - View Dependent Claims (12, 13, 14, 15)
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16. A device comprising:
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a substrate comprising an integrated circuit device at a first side; a first conductive feature extending from the first side of the substrate past a second side of the substrate opposite the first side of the substrate, and wherein a portion of the first conductive feature extending past the second side of the substrate comprises; a substantially planar first surface; and a non-planar second surface connected to the substantially planar first surface; a second conductive feature over and contacting the first conductive feature; and a solder region over and contacting the second conductive feature. - View Dependent Claims (17, 18, 19, 20)
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Specification