High current, low switching loss SiC power module
First Claim
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1. A power module comprising:
- a housing with an interior chamber; and
a plurality of switch modules mounted within the interior chamber and interconnected to facilitate switching power to a load wherein each of the plurality of switch modules comprises at least one transistor and at least one diode and the power module is able to block 1200 volts, conduct 300 amperes, and has switching losses of less than 20 milli-Joules.
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Abstract
A power module includes a housing with an interior chamber and multiple switch modules mounted within the interior chamber of the housing. The switch modules are interconnected and configured to facilitate switching power to a load. Each one of the switch modules includes at least one transistor and at least one diode. The at least one transistor and the at least one diode may be formed from a wide band-gap material system, such as silicon carbide (SiC), thereby allowing the power module to operate at high frequencies with lower switching losses when compared to conventional power modules.
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Citations
34 Claims
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1. A power module comprising:
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a housing with an interior chamber; and a plurality of switch modules mounted within the interior chamber and interconnected to facilitate switching power to a load wherein each of the plurality of switch modules comprises at least one transistor and at least one diode and the power module is able to block 1200 volts, conduct 300 amperes, and has switching losses of less than 20 milli-Joules. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A power module comprising:
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a housing with an interior chamber; at least a first power substrate within the interior chamber, the first power substrate including one or more switch modules on a first surface of the first power substrate for facilitating switching power to a load, wherein the one or more switch modules comprise at least one transistor and at least one diode; and a gate connector coupled to a gate contact of the at least one transistor via a signal path that includes a first conductive trace on the first surface of the power substrate. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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25. A power module comprising:
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a housing with an interior chamber; a pair of output contacts arranged such that an area of at least 150 mm2 of each one of the output contacts is located less than 1.5 mm from the other output contact; and a plurality of switch modules mounted within the interior chamber and interconnected to facilitate switching power from a power source coupled between the output contacts to a load, the plurality of switch modules comprising at least one transistor and at least one diode. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32, 33, 34)
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Specification