Semiconductor device and method of manufacture thereof

• US 9,373,648 B2
• Filed: 04/22/2013
• Issued: 06/21/2016
• Est. Priority Date: 04/23/2012
• Status: Active Grant

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Takamaru, Yutaka, Ito, Kazuatsu, Miyamoto, Tadayoshi, Miyamoto, Mitsunobu, Nakazawa, Makoto, Ogawa, Yasuyuki, Uchida, Seiichi, Mori, Shigeyasu
• Primary Examiner(s): Luu, Chuong A
• Application Number:
  US14/396,079
• Publication Number:
  US 20150084039A1
• Time in Patent Office: 1,156 Days
• Field of Search: 257/43, 257/440, 257/432, 257/449
• US Class Current: 1/1
• CPC Class Codes: G02F 1/13452 Conductors connecting driver circuitry and terminals of panels
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 21/425 producing ion implantation
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

This semiconductor device (100A) includes: an oxide layer (15) which includes a semiconductor region (5) and a conductor region (7) that contacts with the semiconductor region; a source electrode (6s) and a drain electrode (6d) which are electrically connected to the semiconductor region; an insulating layer (11) formed on the source and drain electrodes; a transparent electrode (9) arranged to overlap at least partially with the conductor region with the insulating layer interposed between them; a source line (6a) formed out of the same conductive film as the source electrode; and a gate extended line (3a) formed out of the same conductive film as a gate electrode (3). The source line is electrically connected to the gate extended line via a transparent connecting layer (9a) which is formed out of the same conductive film as the transparent electrode.

Claims

1. A semiconductor device comprising:

a substrate;

a gate electrode formed on the substrate;

a gate insulating layer formed on the gate electrode;

an oxide layer which is formed on the gate insulating layer and which includes a semiconductor region and a conductor region that contacts with the semiconductor region, wherein the semiconductor region overlaps at least partially with the gate electrode with the gate insulating layer interposed between them;

a source electrode and a drain electrode which are electrically connected to the semiconductor region;

an insulating layer formed on the source and drain electrodes;

a transparent electrode arranged to overlap at least partially with the conductor region with the insulating layer interposed between them;

a source line formed out of the same conductive film as the source electrode; and

a gate extended line formed out of the same conductive film as the gate electrode,

wherein the source line is electrically connected to the gate extended line via a transparent connecting layer which is formed out of the same conductive film as the transparent electrode.

2. The semiconductor device of claim 1, further comprising a protective layer which contacts with a channel region of the semiconductor region,

wherein the protective layer is formed on the source line and the insulating layer is formed on the protective layer.

3. The semiconductor device of claim 1, wherein the transparent connecting layer contacts with the oxide layer, and

the source line is electrically connected to the transparent connecting layer via the oxide layer.

4. The semiconductor device of claim 1, wherein the gate extended line includes a gate connecting terminal layer,

the semiconductor device includes another transparent connecting layer which is formed out of the same conductive film as the transparent electrode, and

that another transparent connecting layer contacts with the upper surface of the gate connecting terminal layer.

5. The semiconductor device of claim 1, wherein the oxide layer includes In, Ga and Zn.