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Multiple-gate semiconductor device and method

  • US 9,373,704 B2
  • Filed: 11/24/2014
  • Issued: 06/21/2016
  • Est. Priority Date: 12/02/2009
  • Status: Active Grant
First Claim
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1. A method of forming a semiconductor device, the method comprising:

  • forming a plurality of fins in a substrate;

    forming first isolation regions in the substrate, the first isolation regions extending a first depth from a surface of the substrate;

    forming second isolation regions in the substrate, the second isolation regions extending a second depth from the surface of the substrate, the second depth being less than the first depth;

    after forming the first isolation regions and the second isolation regions, removing a portion of each of the plurality of fins and the second isolation regions; and

    forming a source/drain region, the source/drain region connecting the plurality of fins.

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