Method for manufacturing semiconductor device
First Claim
Patent Images
1. A method for manufacturing a semiconductor device comprising the steps of:
- forming an oxide semiconductor layer over an oxide insulating layer;
performing a heat treatment of the oxide semiconductor layer in an inert atmosphere and then in an oxidation atmosphere by switching the inert atmosphere to the oxidation atmosphere with a temperature of the heat treatment maintained; and
selectively removing the oxide semiconductor layer by dry etching using a gas containing chlorine so that part of the oxide insulating layer is exposed,wherein the oxide semiconductor layer comprises an In—
Sn—
Zn—
O-based semiconductor layer, andwherein a thickness of an exposed region of the oxide insulating layer is smaller than a thickness of a region of the oxide insulating layer overlapped with the oxide semiconductor layer.
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Abstract
To establish a processing technique in manufacture of a semiconductor device including an In—Sn—Zn—O-based semiconductor. An In—Sn—Zn—O-based semiconductor layer is selectively etched by dry etching with the use of a gas containing chlorine such as Cl2, BCl3, SiCl4, or the like. In formation of a source electrode layer and a drain electrode layer, a conductive layer on and in contact with the In—Sn—Zn—O-based semiconductor layer can be selectively etched with little removal of the In—Sn—Zn—O-based semiconductor layer with the use of a gas containing oxygen or fluorine in addition to a gas containing chlorine.
123 Citations
14 Claims
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1. A method for manufacturing a semiconductor device comprising the steps of:
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forming an oxide semiconductor layer over an oxide insulating layer; performing a heat treatment of the oxide semiconductor layer in an inert atmosphere and then in an oxidation atmosphere by switching the inert atmosphere to the oxidation atmosphere with a temperature of the heat treatment maintained; and selectively removing the oxide semiconductor layer by dry etching using a gas containing chlorine so that part of the oxide insulating layer is exposed, wherein the oxide semiconductor layer comprises an In—
Sn—
Zn—
O-based semiconductor layer, andwherein a thickness of an exposed region of the oxide insulating layer is smaller than a thickness of a region of the oxide insulating layer overlapped with the oxide semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for manufacturing a semiconductor device comprising the steps of:
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forming an oxide semiconductor layer over an oxide insulating layer at a substrate temperature of 100°
C. to 600°
C. inclusive;performing a heat treatment of the oxide semiconductor layer in an inert atmosphere and then in an oxidation atmosphere by switching the inert atmosphere to the oxidation atmosphere with a temperature of the heat treatment maintained; selectively removing the oxide semiconductor layer by dry etching using a gas containing Cl2 and BCl3 so that part of the oxide insulating layer is exposed, wherein a thickness of an exposed region of the oxide insulating layer is smaller than a thickness of a region of the oxide insulating layer overlapped with the oxide semiconductor layer; forming a conductive layer over the oxide semiconductor layer; forming a source electrode layer and a drain electrode layer by processing the conductive layer, wherein the source electrode layer and the drain electrode layer overlap with an end portion having a taper angle of the oxide semiconductor layer; forming a gate insulating layer over the source electrode layer and the drain electrode layer; and forming a gate electrode over the gate insulating layer, wherein the oxide semiconductor layer comprises an In—
Sn—
Zn—
O-based semiconductor layer, andwherein the taper angle of the end portion of the oxide semiconductor layer is greater than or equal to 10° and
less than or equal to 70°
after the dry etching. - View Dependent Claims (8, 9, 10)
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11. A method for manufacturing a semiconductor device comprising the steps of:
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forming an oxide semiconductor layer over an oxide insulating layer; performing a heat treatment of the oxide semiconductor layer in an inert atmosphere and then in an oxidation atmosphere by switching the inert atmosphere to the oxidation atmosphere with a temperature of the heat treatment maintained; selectively removing the oxide semiconductor layer by a first dry etching with the use of a gas containing chlorine so that part of the oxide insulating layer is exposed, wherein a thickness of an exposed region of the oxide insulating layer is smaller than a thickness of a region of the oxide insulating layer overlapped with the oxide semiconductor layer; forming a conductive layer over the oxide semiconductor layer; processing the conductive layer by a second dry etching with the use of a gas containing fluorine, oxygen, and chlorine so that a source electrode layer and a drain electrode layer are formed, and so that part of the oxide semiconductor layer between the source electrode layer and the drain electrode layer is exposed, wherein the source electrode layer and the drain electrode layer overlap with an end portion having a taper angle of the oxide semiconductor layer; forming a gate insulating layer over the source electrode layer and the drain electrode layer; and forming a gate electrode over the gate insulating layer, wherein the oxide semiconductor layer comprises an In—
Sn—
Zn—
O-based semiconductor layer,wherein the taper angle of the end portion of the oxide semiconductor layer is greater than or equal to 10° and
less than or equal to 70°
after the first dry etching, andwherein the part of the oxide semiconductor layer exposed by the second dry etching is thinner than a region overlapped with the source electrode layer and the drain electrode layer. - View Dependent Claims (12, 13, 14)
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Specification