Impact ionization devices, and methods of forming impact ionization devices

• US 9,373,716 B2
• Filed: 01/27/2014
• Issued: 06/21/2016
• Est. Priority Date: 03/24/2008
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Ananthan, Venkatesan
• Primary Examiner(s): Tsai, H
• Application Number:
  US14/164,590
• Publication Number:
  US 20140138766A1
• Time in Patent Office: 876 Days
• Field of Search: 257320-322, 257330-332, 438/149, 438156-159, 438/164, 438268-286
• US Class Current: 1/1
• CPC Class Codes: H01L 29/66666 Vertical transistors H01L29/66712, H01L29/66742 take precedence
• CPC Class Codes: H01L 29/7391 Gated diode structures
• CPC Class Codes: H01L 29/7827 Vertical transistors H01L29/7802, H01L29/78642 take precedence

Abstract

Impact ionization devices including vertical and recessed impact ionization metal oxide semiconductor field effect transistor (MOSFET) devices and methods of forming such devices are disclosed. The devices require lower threshold voltage than conventional MOSFET devices while maintaining a footprint equal to or less than conventional MOSFET devices.

Claims

1. An impact ionization device, comprising:

a pillar vertically extending from an oxide material and comprising;

N+ doped silicon vertically adjacent the oxide material;

undoped epitaxial silicon germanium vertically overlying the N+ doped silicon; and

P+ doped epitaxial silicon germanium vertically adjacent the undoped epitaxial silicon germanium; and

a gate adjacent the pillar and comprising a lower portion laterally adjacent the N+ doped silicon of the pillar and an upper surface vertically separated from a lower boundary of the P+ doped epitaxial silicon germanium of the pillar, the undoped epitaxial silicon germanium of the pillar vertically confined between the lower boundary of the P+ doped epitaxial silicon germanium and the upper surface of the gate.

2. The impact ionization device of claim 1, further comprising an insulating material between the gate and the pillar.

3. The impact ionization device of claim 2, wherein the gate surrounds at least a portion of the pillar.

7. The impact ionization device of claim 1, wherein the undoped epitaxial silicon germanium of the pillar exhibits a substantially rectangular shape.

8. The impact ionization device of claim 1, wherein the pillar comprises undoped silicon between an upper boundary of the N+ doped silicon and a lower boundary of the undoped epitaxial silicon germanium.

9. The impact ionization device of claim 2, wherein the insulating material is selected from the group consisting of aluminum oxide and a nitride.

11. The impact ionization device of claim 1, wherein the gate is located directly on lateral surfaces of the pillar.

12. The impact ionization device of claim 11, wherein a lower surface of the gate directly contacts an upper surface of the oxide material.

13. The impact ionization device of claim 1, further comprising a dielectric material extending continuously over each of a top surface and side surfaces of the pillar and a top surface of the oxide material.

4. A method of forming an impact ionization device, the method comprising:

forming a substrate comprising an oxide material, N+ doped silicon vertically adjacent the oxide material, undoped epitaxial silicon germanium vertically overlying the N+ doped silicon, and P+ doped epitaxial silicon germanium vertically adjacent the undoped epitaxial silicon germanium;

removing material of the substrate to form a pillar vertically extending from the oxide material and comprising the N+ doped silicon, the undoped epitaxial silicon germanium, and the P+ doped epitaxial silicon germanium; and

forming a gate adjacent the pillar and comprising a lower portion laterally adjacent the N+ doped silicon of the pillar and an upper surface vertically separated from a lower boundary of the P+ doped epitaxial silicon germanium of the pillar, the undoped epitaxial silicon germanium of the pillar vertically confined between the lower boundary of the P+ doped epitaxial silicon germanium and the upper surface of the gate.

5. The method of claim 4, wherein forming a gate adjacent the pillar comprises depositing gate material over the pillar and removing at least a portion of the gate material from a surface of the pillar.

6. The method of claim 4, wherein removing material of the substrate to form a pillar comprises etching the substrate to a depth of approximately 1,000 Å

.

10. An impact ionization device, comprising:

a pillar vertically extending from an oxide material and comprising;

a drain region comprising doped silicon having a first conductivity vertically adjacent the oxide material;

an undoped region comprising undoped silicon vertically adjacent the drain region;

an impact ionization region comprising undoped silicon germanium vertically adjacent the undoped region; and

a source region vertically adjacent the impact ionization region and comprising doped silicon germanium having a second conductivity opposite the first conductivity of the drain region; and

a gate flanking opposing lateral surfaces of the pillar, a lower portion of the gate laterally adjacent the drain region, and an upper surface of the gate substantially coplanar with a lower boundary of the undoped silicon germanium of the impact ionization region.