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Silicon heterojunction photovoltaic device with wide band gap emitter

  • US 9,373,743 B2
  • Filed: 03/19/2015
  • Issued: 06/21/2016
  • Est. Priority Date: 11/07/2011
  • Status: Expired due to Fees
First Claim
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1. A method of forming a photovoltaic device comprising:

  • providing an absorption layer of a crystalline type IV semiconductor material having a first conductivity type;

    epitaxially depositing a buffer layer of a type III-V semiconductor material on the absorption layer, wherein the buffer layer of the type III-V semiconductor material is an intrinsic semiconductor material; and

    epitaxially forming an emitter layer of a crystalline type III-V semiconductor material having a second conductivity type on a surface of the buffer layer.

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