Method for manufacturing semiconductor device and the semiconductor device
First Claim
1. A method for manufacturing a semiconductor device comprising the steps of:
- growing a stacked semiconductor layer on a principal surface of a substrate, the stacked semiconductor layer including an active layer and a cladding layer;
forming a mesa structure by etching the stacked semiconductor layer using a dry etching method, the mesa structure extending in a [011] direction; and
forming a buried layer on a side surface of the mesa structure and the principal surface of the substrate in a reactor of an organo-metallic vapor phase epitaxy apparatus while supplying a hydrogen chloride gas into the reactor, the buried layer being composed of an Fe-doped InP,wherein, in the step of forming the buried layer, the hydrogen chloride gas is supplied from the beginning of forming the buried layer,the buried layer has a first region and a second region,the first region is formed on a side surface of the active layer, the first region having a front surface of a (311)B plane,the second region is formed on the from surface of the first region, andthe first region has a higher Fe concentration than that of the second region.
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Abstract
A method for manufacturing a semiconductor device comprising the steps of: growing a stacked semiconductor layer on a substrate, the stacked semiconductor layer including an active layer and a cladding layer; forming a mesa structure by etching the stacked semiconductor layer, the mesa structure extending in a [011] direction; and forming a buried layer of Fe-doped InP on the side surface of the mesa structure in a reactor of an organo-metallic vapor phase epitaxy apparatus while supplying a hydrogen chloride gas into the reactor. In the step of forming the buried layer, the hydrogen chloride gas is supplied from the beginning of forming the buried layer. The buried layer has a first region and a second region. The first region has a front surface of a (311)B plane. The second region is formed on the front surface. The Fe concentration of the first region is higher than that of the second region.
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Citations
5 Claims
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1. A method for manufacturing a semiconductor device comprising the steps of:
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growing a stacked semiconductor layer on a principal surface of a substrate, the stacked semiconductor layer including an active layer and a cladding layer; forming a mesa structure by etching the stacked semiconductor layer using a dry etching method, the mesa structure extending in a [011] direction; and forming a buried layer on a side surface of the mesa structure and the principal surface of the substrate in a reactor of an organo-metallic vapor phase epitaxy apparatus while supplying a hydrogen chloride gas into the reactor, the buried layer being composed of an Fe-doped InP, wherein, in the step of forming the buried layer, the hydrogen chloride gas is supplied from the beginning of forming the buried layer, the buried layer has a first region and a second region, the first region is formed on a side surface of the active layer, the first region having a front surface of a (311)B plane, the second region is formed on the from surface of the first region, and the first region has a higher Fe concentration than that of the second region. - View Dependent Claims (2, 3, 4, 5)
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Specification