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Apparatus and methods for biasing radio frequency switches

  • US 9,374,124 B2
  • Filed: 10/03/2014
  • Issued: 06/21/2016
  • Est. Priority Date: 10/03/2014
  • Status: Active Grant
First Claim
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1. A radio frequency (RF) switching circuit comprising:

  • one or more field effect transistor (FET) switches comprising a first FET switch; and

    an adaptive switch bias circuit configured to control a gate voltage and a channel voltage of the first FET switch, wherein the adaptive switch bias circuit is configured to receive a switch enable signal, wherein the adaptive switch bias circuit is configured to bias the first FET switch with a turn-on voltage to turn on the first FET switch when the switch enable signal is in a first state, and wherein the adaptive switch bias circuit is configured to bias the first FET switch with a turn-off voltage to turn off the first FET switch when the switch enable signal is in a second state,wherein the adaptive switch bias circuit is configured to be powered by a power high supply voltage and a power low supply voltage, and wherein the adaptive switch bias circuit is configured to control a magnitude of the turn-on voltage and a magnitude of the turn-off voltage based on a voltage difference between the power high supply voltage and the power low supply voltage,wherein the adaptive switch bias circuit comprises;

    a supply dependent voltage generation circuit configured to receive the power high supply voltage and to generate a dependent voltage that changes in relation to a voltage level of the power high supply voltage, wherein the supply dependent voltage generation circuit is configured to generate a voltage drop; and

    a voltage divider configured to generate a bias voltage based on a voltage difference between the dependent voltage and the power low supply voltage.

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