Apparatus and methods for biasing radio frequency switches
First Claim
1. A radio frequency (RF) switching circuit comprising:
- one or more field effect transistor (FET) switches comprising a first FET switch; and
an adaptive switch bias circuit configured to control a gate voltage and a channel voltage of the first FET switch, wherein the adaptive switch bias circuit is configured to receive a switch enable signal, wherein the adaptive switch bias circuit is configured to bias the first FET switch with a turn-on voltage to turn on the first FET switch when the switch enable signal is in a first state, and wherein the adaptive switch bias circuit is configured to bias the first FET switch with a turn-off voltage to turn off the first FET switch when the switch enable signal is in a second state,wherein the adaptive switch bias circuit is configured to be powered by a power high supply voltage and a power low supply voltage, and wherein the adaptive switch bias circuit is configured to control a magnitude of the turn-on voltage and a magnitude of the turn-off voltage based on a voltage difference between the power high supply voltage and the power low supply voltage,wherein the adaptive switch bias circuit comprises;
a supply dependent voltage generation circuit configured to receive the power high supply voltage and to generate a dependent voltage that changes in relation to a voltage level of the power high supply voltage, wherein the supply dependent voltage generation circuit is configured to generate a voltage drop; and
a voltage divider configured to generate a bias voltage based on a voltage difference between the dependent voltage and the power low supply voltage.
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Abstract
Apparatus and methods for radio frequency (RF) switches are provided herein. In certain implementations, an RF switching circuit includes an adaptive switch bias circuit that controls gate and/or channel voltages of one or more field effect transistor (FET) switches. Additionally, the adaptive switch bias circuit is powered by a power high supply voltage and a power low supply voltage, and can be used to selectively turn on or off the FET switches based on a state of one or more switch enable signals. The adaptive switch bias circuit adaptively biases that gate and/or channel voltages of the FET switches based on a voltage difference between the power high and power low supply voltages to provide switch biasing suitable for use with two or more different power supply voltage levels.
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Citations
23 Claims
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1. A radio frequency (RF) switching circuit comprising:
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one or more field effect transistor (FET) switches comprising a first FET switch; and an adaptive switch bias circuit configured to control a gate voltage and a channel voltage of the first FET switch, wherein the adaptive switch bias circuit is configured to receive a switch enable signal, wherein the adaptive switch bias circuit is configured to bias the first FET switch with a turn-on voltage to turn on the first FET switch when the switch enable signal is in a first state, and wherein the adaptive switch bias circuit is configured to bias the first FET switch with a turn-off voltage to turn off the first FET switch when the switch enable signal is in a second state, wherein the adaptive switch bias circuit is configured to be powered by a power high supply voltage and a power low supply voltage, and wherein the adaptive switch bias circuit is configured to control a magnitude of the turn-on voltage and a magnitude of the turn-off voltage based on a voltage difference between the power high supply voltage and the power low supply voltage, wherein the adaptive switch bias circuit comprises; a supply dependent voltage generation circuit configured to receive the power high supply voltage and to generate a dependent voltage that changes in relation to a voltage level of the power high supply voltage, wherein the supply dependent voltage generation circuit is configured to generate a voltage drop; and a voltage divider configured to generate a bias voltage based on a voltage difference between the dependent voltage and the power low supply voltage. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A radio frequency (RF) switching circuit comprising:
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one or more field effect transistor (FET) switches comprising a first FET switch; and an adaptive switch bias circuit configured to control a gate voltage and a channel voltage of the first FET switch, wherein the adaptive switch bias circuit is configured to receive a switch enable signal, wherein the adaptive switch bias circuit is configured to bias the first FET switch with a turn-on voltage to turn on the first FET switch when the switch enable signal is in a first state, and wherein the adaptive switch bias circuit is configured to bias the first FET switch with a turn-off voltage to turn off the first FET switch when the switch enable signal is in a second state, wherein the adaptive switch bias circuit is configured to be powered by a power high supply voltage and a power low supply voltage, and wherein the adaptive switch bias circuit is configured to control a magnitude of the turn-on voltage and a magnitude of the turn-off voltage based on a voltage difference between the power high supply voltage and the supply voltage, wherein the adaptive switch bias circuit includes a gate bias output configured to control the gate voltage of the first FET switch and a channel bias output configured to control the channel voltage of the first FET switch, wherein the RF switching circuit further comprises; a gate bias resistor electrically connected between the gate bias output and a gate of the first FET switch; and a first channel bias resistor electrically connected between the channel bias output and a source of the first FET switch; and a second channel bias resistor electrically connected between the source of the first FET switch and a drain of the first FET switch. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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17. An electronically-implemented method of biasing a radio frequency (RF) switch, the method comprising:
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powering an adaptive switch bias circuit using a power high supply voltage and a power low supply voltage; controlling a magnitude of a turn-on voltage and a magnitude of a turn-off voltage based on a voltage difference between the power high supply voltage and the power low supply voltage; generating a dependent voltage from the power high supply voltage using a supply dependent voltage generation circuit, wherein the dependent voltage changes in relation to a voltage level of the power high supply voltage; generating a bias voltage based on dividing a voltage difference between the dependent voltage and the power low supply voltage using a voltage divider; receiving a switch enable signal as an input to the adaptive switch bias circuit; and controlling a gate voltage and a channel voltage of a first field effect transistor (FET) switch using the adaptive switch bias circuit, wherein controlling the gate voltage and the channel voltage of the first FET switch comprises; biasing the first FET switch using the turn-on voltage when the switch enable signal is in a first state, and biasing the first FET switch using the turn-off voltage when the switch enable signal is in a second state. - View Dependent Claims (18, 19, 20, 21, 22, 23)
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Specification