Substrate processing apparatus and substrate processing method

• US 9,375,748 B2
• Filed: 07/16/2013
• Issued: 06/28/2016
• Est. Priority Date: 07/18/2012
• Status: Active Grant

• Current Assignee: Screen Semiconductor Solutions Co., Ltd. (SCREEN Holdings Co., Ltd.)
• Original Assignee: Screen Semiconductor Solutions Co., Ltd. (SCREEN Holdings Co., Ltd.)
• Inventors: Harumoto, Masahiko, Miyagi, Tadashi, Inagaki, Yukihiko, Kaneyama, Koji
• Primary Examiner(s): FULLER, RODNEY EVAN
• Application Number:
  US13/943,198
• Publication Number:
  US 20140022521A1
• Time in Patent Office: 1,078 Days
• Field of Search: 396/611
• US Class Current: 1/1
• CPC Class Codes: B05C 11/00 Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00 means for manipulating or holding work B05C13/00; enclosures for apparatus, booths B05C15/00; spray booths B05B16/00
• CPC Class Codes: C23C 16/0227 by cleaning or etching
• CPC Class Codes: C23C 16/56 After-treatment
• CPC Class Codes: G03F 7/0002 Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
• CPC Class Codes: G03F 7/162 Coating on a rotating support, e.g. using a whirler or a spinner
• CPC Class Codes: G03F 7/20 Exposure; Apparatus therefor photographic printing apparatus for making copies G03B27/00
• CPC Class Codes: G03F 7/3021 from a wafer supported on a rotating chuck
• CPC Class Codes: G03F 7/32 Liquid compositions therefor, e.g. developers
• CPC Class Codes: H01J 37/02 Details
• CPC Class Codes: H01L 21/0335 characterised by their behaviour during the process, e.g. soluble masks, redeposited masks
• CPC Class Codes: H01L 21/0337 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/0338 Process specially adapted to improve the resolution of the mask
• CPC Class Codes: H01L 21/67115 mainly by radiation
• CPC Class Codes: H01L 21/67126 Apparatus for sealing, encapsulating, glassing, decapsulating or the like processes H01L23/02, H01L23/28
• CPC Class Codes: H01L 21/6715 Apparatus for applying a liquid, a resin, an ink or the like H01L21/67126 takes precedence
• CPC Class Codes: H01L 21/67178 vertical arrangement

Abstract

An underlayer is formed to cover the upper surface of a substrate and a guide pattern is formed on the underlayer. A DSA film constituted by two types of polymers is formed in a region on the underlayer where the guide pattern is not formed. Thermal processing is performed while a solvent is supplied to the DSA film on the substrate. Thus, a microphase separation of the DSA film occurs. As a result, patterns made of the one polymer and patterns made of another polymer are formed. Exposure processing and development processing are performed in this order on the DSA film after the microphase separation such that the patterns made of another polymer are removed.

Claims

1. A substrate processing apparatus, comprising:

a processing film formation unit configured to form a processing film made of a directed self assembly material on a substrate; and

a thermal processing unit configured to perform thermal processing while supplying a solvent to the processing film formed on the substrate by the processing film formation unit,

wherein the thermal processing unit includes

a thermal processing plate on which the substrate with the processing film formed thereon is placed, the thermal processing plate being configured to adjust a temperature of the placed substrate,

a cover configured to surround a space above the thermal processing plate, and

a solvent supplier configured to supply an evaporated solvent into the cover.

2. The substrate processing apparatus according to claim 1, wherein

the solvent supplier is configured to supply one or plurality of toluene, heptane, acetone, propylene glycol monomethylether acetate, propylene glycol monomethylether, cyclohexanone, carbon disulfide and tetrahydrofuran as the solvent.

3. The substrate processing apparatus according to claim 1, wherein

the solvent supplier is configured to be capable of selectively supplying one of a plurality of types of solvents.

4. The substrate processing apparatus according to claim 1, wherein

the solvent supplier is configured to be capable of mixing and supplying a plurality of types of solvents.

5. The substrate processing apparatus according to claim 1, wherein

the thermal processing unit further includes a decompressor that reduces pressure in the cover.

6. The substrate processing apparatus according to claim 1, further comprising:

an exposure processing unit configured to perform exposure processing on the processing film after the thermal processing by the thermal processing unit; and

a first development processing unit configured to perform development processing by supplying a development liquid to the processing film after the exposure processing by the exposure processing unit.

7. The substrate processing apparatus according to claim 1, further comprising:

a second development processing unit configured to perform development processing by dry-etching on the processing film after the thermal processing by the thermal processing unit.

8. The substrate processing apparatus according to claim 1, wherein the directed self-assembly material is made of a block copolymer constituted by a plurality of types of polymers, the plurality of types of polymers being incompatible with one another.

9. The substrate processing apparatus according to claim 8, wherein the plurality of types of polymers include any of a combination of polystyrene and polymethylmethacrylate, a combination of polystyrene and polydimethylsiloxane, a combination of polyethylene and polyferrocenyl dimethylsilane, a combination of polystyrene and polyethylene oxide, a combination of polystyrene and polyvinylpyridine, a combination of polyethylene and polyhydroxystyrene, and a combination of polymethyl methacrylate and polymethacrylate containing polyhedral oligomeric silsesquioxane.

10. A substrate processing method includes the steps of:

forming a processing film made of a directed self assembly material on a substrate in a processing film formation unit; and

performing thermal processing while supplying an evaporated solvent in a thermal processing unit to the processing film formed on the substrate by the processing film formation unit.

11. The substrate processing method according to claim 10, wherein

the step of performing the thermal processing includes the step of supplying one or plurality of toluene, heptane, acetone, propylene glycol monomethylether acetate, propylene glycol monomethylether, cyclohexanone, carbon disulfide and tetrahydrofuran as the solvent to the processing film formed on the substrate.

12. The substrate processing method according to claim 10, wherein

the step of performing the thermal processing includes the step of selectively supplying one of a plurality of types of solvents to the processing film formed on the substrate.

13. The substrate processing method according to claim 10, wherein

the step of performing the thermal processing includes the step of mixing and supplying a plurality of types of solvents to the processing film formed on the substrate.

14. The substrate processing method according to claim 10 further includes the steps of

performing exposure processing in an exposure processing unit on the processing film after the thermal processing by the thermal processing unit, and

performing development processing in a first development processing unit by supplying a development liquid to the processing film after the exposure processing by the exposure processing unit.

15. The substrate processing method according to claim 10 further includes the step of

performing development processing by dry-etching in a second development processing unit on the processing film after the thermal processing by the thermal processing unit.

16. The substrate processing method according to claim 10, wherein the directed self-assembly material is made of a block copolymer constituted by a plurality of types of polymers, the plurality of types of polymers being incompatible with one another.

17. The substrate processing method according to claim 16, wherein the plurality of types of polymers include any of a combination of polystyrene and polymethylmethacrylate, a combination of polystyrene and polydimethylsiloxane, a combination of polyethylene and polyferrocenyl dimethylsilane, a combination of polystyrene and polyethylene oxide, a combination of polystyrene and polyvinylpyridine, a combination of polyethylene and polyhydroxystyrene, and a combination of polymethyl methacrylate and polymethacrylate containing polyhedral oligomeric silsesquioxane.