Stable memory source bias over temperature and method
First Claim
1. A random access memory, comprising:
- a plurality of memory cells, each of said plurality of memory cells having a memory element and a first electrical characteristic being variable based, at least in part, on temperature;
a bias circuit operatively coupled to at least one of said plurality of memory cells, said bias circuit being configured to generate a bias voltage for said at least one of said plurality of memory cells said bias circuit having a second electrical characteristic being variable based, at least in part, on temperature; and
a voltage buffer operatively coupled between said supply bias circuit and said at least one of said plurality of memory cells;
said bias circuit include at least one dummy memory cell to produce a voltage on an input of the voltage buffer;
said first electrical characteristic being proportional to said second electrical characteristic to automatically track proportionally over a predetermined range of temperatures, said predetermined range of temperatures being greater than zero;
said bias circuit being coupled with at least one of said plurality of memory cells so that said bias voltage on each of said plurality of memory cells is proportional with variations in said at least one of said plurality of memory cells over said predetermined range of temperatures.
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Accused Products
Abstract
Random access memory having a plurality of memory cells, each of the plurality of memory cells having a memory element and a first electrical characteristic being variable based, at least in part, on temperature and a bias circuit operatively coupled to at least one of the plurality of memory cells, the bias circuit being configured to generate a bias voltage for the at least one of the plurality of memory cells. The bias circuit has a second electrical characteristic being variable based, at least in part, on temperature. The first electrical characteristic is approximately proportional to the second electrical characteristic over a predetermined range of temperatures, the predetermined range of temperatures being greater than zero. The bias voltage on each of the plurality of memory cells is approximately proportional with variations in the first electrical characteristic over the predetermined range of temperatures.
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Citations
67 Claims
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1. A random access memory, comprising:
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a plurality of memory cells, each of said plurality of memory cells having a memory element and a first electrical characteristic being variable based, at least in part, on temperature; a bias circuit operatively coupled to at least one of said plurality of memory cells, said bias circuit being configured to generate a bias voltage for said at least one of said plurality of memory cells said bias circuit having a second electrical characteristic being variable based, at least in part, on temperature; and a voltage buffer operatively coupled between said supply bias circuit and said at least one of said plurality of memory cells; said bias circuit include at least one dummy memory cell to produce a voltage on an input of the voltage buffer; said first electrical characteristic being proportional to said second electrical characteristic to automatically track proportionally over a predetermined range of temperatures, said predetermined range of temperatures being greater than zero; said bias circuit being coupled with at least one of said plurality of memory cells so that said bias voltage on each of said plurality of memory cells is proportional with variations in said at least one of said plurality of memory cells over said predetermined range of temperatures. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31)
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32. A method of maintaining a relatively stable bias voltage of a random access memory over a range of temperatures, comprising the steps of:
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providing a plurality of memory cells each having a memory element, each of said plurality of memory cells being configured to store a digital bit and having a first electrical characteristic being variable based, at least in part, on temperature; providing a bias circuit operatively coupled to at least one of said plurality of memory cells and being configured to bias said at least one of said plurality of memory cells; and providing a voltage buffer operatively coupled between said supply bias circuit and said at least one of said plurality of memory cells; said bias circuit include at least one dummy memory cell to produce a voltage on an input of the voltage buffer; said bias circuit having a second electrical characteristic being variable based, at least in part, on temperature; said first electrical characteristic being proportional to said second electrical characteristic to automatically track proportionally over a predetermined range of temperatures; said bias circuit being coupled with at least one of said plurality of memory cells so that a bias voltage of at least one of said plurality of memory cells is proportional with variations in said at least one of said plurality of memory cells over said range of temperatures. - View Dependent Claims (33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67)
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Specification