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Stable memory source bias over temperature and method

  • US 9,378,805 B2
  • Filed: 10/30/2012
  • Issued: 06/28/2016
  • Est. Priority Date: 01/03/2012
  • Status: Active Grant
First Claim
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1. A random access memory, comprising:

  • a plurality of memory cells, each of said plurality of memory cells having a memory element and a first electrical characteristic being variable based, at least in part, on temperature;

    a bias circuit operatively coupled to at least one of said plurality of memory cells, said bias circuit being configured to generate a bias voltage for said at least one of said plurality of memory cells said bias circuit having a second electrical characteristic being variable based, at least in part, on temperature; and

    a voltage buffer operatively coupled between said supply bias circuit and said at least one of said plurality of memory cells;

    said bias circuit include at least one dummy memory cell to produce a voltage on an input of the voltage buffer;

    said first electrical characteristic being proportional to said second electrical characteristic to automatically track proportionally over a predetermined range of temperatures, said predetermined range of temperatures being greater than zero;

    said bias circuit being coupled with at least one of said plurality of memory cells so that said bias voltage on each of said plurality of memory cells is proportional with variations in said at least one of said plurality of memory cells over said predetermined range of temperatures.

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