Well resistors and polysilicon resistors
First Claim
1. An integrated circuit, comprising:
- a substrate comprising semiconductor material at a top surface of the substrate;
field oxide formed by a shallow trench isolation (STI) process disposed at the top surface of the substrate;
a well resistor disposed in the semiconductor material under the field oxide;
resistor head active areas disposed through the field oxide proximate to ends of the well resistor; and
resistor dummy active areas disposed through the field oxide in an area for the well resistor, the resistor dummy active areas being free of electrical connections above the substrate, the resistor dummy active areas having a density of 10 percent to 80 percent.
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Accused Products
Abstract
An integrated circuit containing a well resistor has STI field oxide and resistor dummy active areas in the well resistor. STI trenches are etched and filled with trench fill dielectric material. The trench fill dielectric material is removed from over the active areas by a CMP process, leaving STI field oxide in the STI trenches. Subsequently, dopants are implanted into a substrate in the well resistor area to form the well resistor. An integrated circuit containing a polysilicon resistor has STI field oxide and resistor dummy active areas in an area for the polysilicon resistor. A layer of polysilicon is formed and planarized by a CMP process. A polysilicon etch mask is formed over the CMP-planarized polysilicon layer to define the polysilicon resistor. A polysilicon etch process removes polysilicon in areas exposed by the polysilicon etch mask, leaving the polysilicon resistor.
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Citations
10 Claims
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1. An integrated circuit, comprising:
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a substrate comprising semiconductor material at a top surface of the substrate; field oxide formed by a shallow trench isolation (STI) process disposed at the top surface of the substrate; a well resistor disposed in the semiconductor material under the field oxide; resistor head active areas disposed through the field oxide proximate to ends of the well resistor; and resistor dummy active areas disposed through the field oxide in an area for the well resistor, the resistor dummy active areas being free of electrical connections above the substrate, the resistor dummy active areas having a density of 10 percent to 80 percent. - View Dependent Claims (2, 3, 4, 5, 6)
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7. An integrated circuit, comprising:
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a substrate comprising semiconductor material at a top surface of the substrate; field oxide formed by an STI process disposed at the top surface of the substrate; a polysilicon resistor disposed over the field oxide, the polysilicon resistor formed from a layer of CMP-planarized polysilicon; and resistor dummy active areas disposed through the field oxide in an area for the polysilicon resistor, the resistor dummy active areas being free of electrical connections above the substrate, the resistor dummy active areas having a density of 10 percent to 80 percent. - View Dependent Claims (8, 9, 10)
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Specification