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Method for forming nanowire and semiconductor device formed with the nanowire

  • US 9,379,182 B1
  • Filed: 02/03/2015
  • Issued: 06/28/2016
  • Est. Priority Date: 02/03/2015
  • Status: Active Grant
First Claim
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1. A method for forming nanowires over a semiconductor substrate comprising:

  • forming a semiconductor fin structure, said fin structure including a semiconductor material formed with a plurality of fins and a shallow trench isolation formed between adjacent fins;

    forming a plurality of fin recesses by removing a top portion from each of the plurality of fins so that a top surface of each of the plurality of fins lies below a top surface of the shallow trench isolation formed between adjacent fins;

    forming a germanium-based semiconductor in the plurality of fin recesses as a germanium-based plug;

    after forming the germanium-based semiconductor in the fin recesses, removing a top portion of the shallow trench isolation to an extent which exposes side faces of the formed germanium-based plug; and

    annealing the germanium-based plug and the shallow trench isolation to form an insulator around the germanium-based plug as an insulated nanowire, and forming an insulator from at least a portion of the shallow trench isolation as an insulator layer.

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