Vertically-conducting trench MOSFET
First Claim
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1. A semiconductor device comprising:
- a trench disposed within an epitaxial layer of a substrate, the trench having an upper trench part that is wider than a lower trench part in width;
a gate insulating layer disposed on an inner surface of the trench;
a gate disposed within the trench;
an interlayer insulating layer pattern disposed on the gate insulating layer within the trench that includes the gate;
a source region disposed within the substrate and contacting a sidewall of the upper trench part of the trench;
a body region disposed within the epitaxial layer of the substrate;
a contact trench filled with a metal, the contact trench allowing the source region and the body region to contact each other; and
an impurity region disposed beneath the contact trench, the impurity region having the same type of impurity as the body region and having a higher concentration of impurity than the body region.
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Abstract
A semiconductor device and a fabricating method thereof are provided. The semiconductor device include: a trench disposed within a substrate, the trench comprising an upper trench part that is wider than a lower trench part in width; a gate disposed in the trench; an interlayer insulating layer pattern disposed above the gate in the trench; a source region disposed within the substrate and contacting a sidewall of the upper trench part; a body region disposed below the source region in the substrate; and a contact trench disposed above the body to region and filled with a conductive material.
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Citations
9 Claims
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1. A semiconductor device comprising:
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a trench disposed within an epitaxial layer of a substrate, the trench having an upper trench part that is wider than a lower trench part in width; a gate insulating layer disposed on an inner surface of the trench; a gate disposed within the trench; an interlayer insulating layer pattern disposed on the gate insulating layer within the trench that includes the gate; a source region disposed within the substrate and contacting a sidewall of the upper trench part of the trench; a body region disposed within the epitaxial layer of the substrate; a contact trench filled with a metal, the contact trench allowing the source region and the body region to contact each other; and an impurity region disposed beneath the contact trench, the impurity region having the same type of impurity as the body region and having a higher concentration of impurity than the body region. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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a trench disposed within a substrate, the trench comprising an upper trench part that is wider than a lower trench part in width; a gate disposed in the trench; an interlayer insulating layer pattern disposed above the gate in the trench; a source region disposed within the substrate and contacting a sidewall of the upper trench part; a body region disposed below the source region in the substrate; and a contact trench disposed above the body region and filled with a conductive material. - View Dependent Claims (8, 9)
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Specification