Oxide semiconductor film, semiconductor device, and manufacturing method of semiconductor device

• US 9,379,223 B2
• Filed: 12/15/2014
• Issued: 06/28/2016
• Est. Priority Date: 03/18/2011
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Koezuka, Junichi, Sato, Yuichi, Ohno, Shinji
• Primary Examiner(s): Wright, Tucker J
• Application Number:
  US14/570,527
• Publication Number:
  US 20150140730A1
• Time in Patent Office: 561 Days
• US Class Current: 1/1
• CPC Class Codes: G02F 1/136204 Arrangements to prevent high voltage or static electricity failures
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/0259 Microstructure
• CPC Class Codes: H01L 21/265 producing ion implantation
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H10B 99/00 Subject matter not provided for in other groups of this subclass

Abstract

A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. In a transistor using an oxide semiconductor film for an active layer, a microvoid is provided in a source region and a drain region adjacent to a channel region. By providing a microvoid in the source region and the drain region formed in an oxide semiconductor film, hydrogen contained in the channel region of an oxide semiconductor film can be captured in the microvoid.

Claims

1. A manufacturing method of a semiconductor device, the method comprising the steps of:

forming a gate electrode;

forming a gate insulating film over the gate electrode;

forming an oxide semiconductor film and a pair of electrodes over the gate electrode with the gate insulating film therebetween, the pair of electrodes being in contact with the oxide semiconductor film;

forming a microvoid by adding oxygen to parts of the oxide semiconductor film to form a source region, a drain region, and a channel region; and

performing heat treatment at a temperature higher than or equal to 200°

C. and lower than or equal to 700°

C. after forming the microvoid.

2. A manufacturing method of a semiconductor device according to claim 1, further comprising the step of:

forming an interlayer insulating film over the oxide semiconductor film and the pair of electrodes before performing the heat treatment.

3. A manufacturing method of a semiconductor device according to claim 1, further comprising the steps of:

forming an interlayer insulating film over the oxide semiconductor film,

forming a first opening and a second opening exposing the oxide semiconductor film in the interlayer insulating film; and

wherein one of the pair of electrodes is in contact with the oxide semiconductor film through the first opening and the other of the pair of electrodes is in contact with the oxide semiconductor film through the second opening.

4. A manufacturing method of a semiconductor device according to claim 1,

wherein the pair of electrodes is formed over the oxide semiconductor film.

5. A manufacturing method of a semiconductor device according to claim 1,

wherein the oxide semiconductor film is formed over the pair of electrodes.

6. A manufacturing method of a semiconductor device according to claim 1,

wherein the step of forming the microvoid is performed before the step of forming the pair of electrodes.

7. A manufacturing method of a semiconductor device according to claim 1,

wherein the step of forming the microvoid is performed after the step of forming the pair of electrodes.

8. A manufacturing method of a semiconductor device according to claim 1,

wherein the microvoid is formed by an ion implantation or ion doping using at least one of nitrogen, oxygen, and hydrogen to the part of the oxide semiconductor film.

9. A manufacturing method of a semiconductor device, the method comprising the steps of:

forming an oxide semiconductor film and a pair of electrodes, the pair of electrodes being in contact with the oxide semiconductor film;

forming a microvoid by adding oxygen to parts of the oxide semiconductor film to form a source region, a drain region, and a channel region;

forming a gate insulating film over the oxide semiconductor film and the pair of electrodes;

forming a gate electrode overlapping with the oxide semiconductor film with the gate insulating film provided therebetween; and

performing heat treatment at a temperature higher than or equal to 200°

C. and lower than or equal to 700°

C. after forming the gate electrode,

wherein the microvoid includes at least one of nitrogen, hydrogen, and oxygen more than an outside of the microvoid includes.

10. A manufacturing method of a semiconductor device according to claim 9, further comprising the steps of:

forming an interlayer insulating film over the gate electrode; and

forming a first opening and a second opening exposing the oxide semiconductor film in the interlayer insulating film,

wherein one of the pair of electrodes is in contact with the oxide semiconductor film through the first opening and the other of the pair of electrodes is in contact with the oxide semiconductor film through the second opening,

wherein the step of forming the microvoid is performed by using the gate electrode as a mask;

wherein the step of forming the first opening and the second opening is performed after the step of performing the heat treatment, and

wherein the step of forming the pair of electrodes is performed after the step of forming the first opening and the second opening.

11. A manufacturing method of a semiconductor device according to claim 9,

wherein the step of forming the microvoid is performed after the step of forming the pair of electrodes.

12. A manufacturing method of a semiconductor device according to claim 9,

wherein the pair of electrodes is formed over the oxide semiconductor film.

13. A manufacturing method of a semiconductor device according to claim 9,

wherein the oxide semiconductor film is formed over the pair of electrodes.

14. A manufacturing method of a semiconductor device according to claim 9,

wherein the step of forming the microvoid is performed before the step of forming the pair of electrodes.

15. A manufacturing method of a semiconductor device according to claim 9,

wherein the microvoid is formed by an ion implantation or ion doping using at least one of nitrogen, oxygen, and hydrogen to the part of the oxide semiconductor film.