Thin-film transistor structure, as well as thin-film transistor and display device each having said structure
First Claim
1. A thin-film transistor structure, comprising, on a substrate, in order from the substrate side:
- an oxide semiconductor layer;
a source-drain electrode; and
a passivation layer,wherein;
the oxide semiconductor layer is a stacked product of a first oxide semiconductor layer and a second oxide semiconductor layer;
the first oxide semiconductor layer consists of, as a metal element, Zn;
or Zn and at least one element selected from the group consisting of Al, Ga, and Sn, wherein a content of Zn is 50 atomic % or more as a percentage of all metal elements contained therein,the first oxide semiconductor layer is formed on the source-drain electrode and passivation layer side;
the second oxide semiconductor layer consists of, as a metal element, at least one selected from the group consisting of In, Ga, and Zn, and the second oxide semiconductor layer is formed on the substrate side;
andthe first oxide semiconductor layer is in direct contact both with the source-drain electrode and with the passivation layer.
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Accused Products
Abstract
There is provided an oxide semiconductor layer capable of making stable the electric characteristics of a thin-film transistor without requiring an oxidatively-treated layer when depositing a passivation layer or the like in display devices such as organic EL displays depositing and liquid crystal displays. The thin-film transistor structure of the present invention at least having, on a substrate, an oxide semiconductor layer, a source-drain electrode, and a passivation layer in order from the substrate side, wherein the oxide semiconductor layer is a stacked product of a first oxide semiconductor layer and a second oxide semiconductor layer; the first oxide semiconductor layer has a Zn content of 50 atomic % or more as a percentage of all metal elements contained therein, and the first oxide semiconductor layer is formed on the source-drain electrode and passivation layer side; the second oxide semiconductor layer contains at least one element selected from the group consisting of In, Ga, and Zn, and the second oxide semiconductor layer is formed on the substrate side; and the first oxide semiconductor layer is in direct contact both with the source-drain electrode and with the passivation layer.
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Citations
16 Claims
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1. A thin-film transistor structure, comprising, on a substrate, in order from the substrate side:
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an oxide semiconductor layer; a source-drain electrode; and a passivation layer, wherein; the oxide semiconductor layer is a stacked product of a first oxide semiconductor layer and a second oxide semiconductor layer; the first oxide semiconductor layer consists of, as a metal element, Zn;
or Zn and at least one element selected from the group consisting of Al, Ga, and Sn, wherein a content of Zn is 50 atomic % or more as a percentage of all metal elements contained therein,the first oxide semiconductor layer is formed on the source-drain electrode and passivation layer side; the second oxide semiconductor layer consists of, as a metal element, at least one selected from the group consisting of In, Ga, and Zn, and the second oxide semiconductor layer is formed on the substrate side; and the first oxide semiconductor layer is in direct contact both with the source-drain electrode and with the passivation layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A thin-film transistor structure, comprising, on a substrate, in order from the substrate side:
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an oxide semiconductor layer; an etch stop layer; and a source-drain electrode, wherein; the oxide semiconductor layer is a stacked product of a first oxide semiconductor layer and a second oxide semiconductor layer; the first oxide semiconductor layer consists of, as a metal element, Zn;
or Zn and at least one element selected from the group consisting of Al, Ga, and Sn, wherein a content of Zn is 50 atomic % or more as a percentage of all metal elements contained therein,the first oxide semiconductor layer is formed on the etch stop layer and source-drain electrode side; the second oxide semiconductor layer consists of, as a metal element, at least one selected from the group consisting of In, Ga, and Zn, and the second oxide semiconductor layer is formed on the substrate side; and the first oxide semiconductor layer is in direct contact both with the etch stop layer and with the source-drain electrode. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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Specification