Semiconductor device and method for producing same

• US 9,379,250 B2
• Filed: 06/12/2013
• Issued: 06/28/2016
• Est. Priority Date: 06/22/2012
• Status: Active Grant

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Uchida, Seiichi, Ogawa, Yasuyuki, Miyamoto, Tadayoshi, Ito, Kazuatsu, Takamaru, Yutaka, Nakazawa, Makoto, Miyamoto, Mitsunobu
• Primary Examiner(s): Lee, Jae
• Application Number:
  US14/408,626
• Publication Number:
  US 20150200303A1
• Time in Patent Office: 1,112 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/441 Deposition of conductive or insulating materials for electrodes
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/45 Ohmic electrodes
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

This semiconductor device (100A) includes: a substrate (2); a gate electrode (3) formed on the substrate (2); a gate insulating layer (4) formed over the gate electrode (3); an oxide semiconductor layer (5) formed on the gate insulating layer (4); source and drain electrodes (6s, 6d) electrically connected to the oxide semiconductor layer (5); a first transparent electrode (7) electrically connected to the drain electrode (6d); an interlayer insulating layer (8a) including portions formed on the source and drain electrodes (6s, 6d); and a second transparent electrode (9) formed on the interlayer insulating layer (8a). At least a portion of the second transparent electrode (9) overlaps with the first transparent electrode (7) with the interlayer insulating layer (8a) interposed between them. And the oxide semiconductor layer (5) and the first transparent electrode (7) are formed out of a same oxide film.

Claims

1. A semiconductor device comprising a substrate and a thin-film transistor formed on the substrate,

wherein the thin-film transistor includes:

a gate electrode formed on the substrate;

a gate insulating layer formed over the gate electrode;

an oxide semiconductor layer formed on the gate insulating layer; and

a source and drain electrodes electrically connected to the oxide semiconductor layer,

the semiconductor device further includes;

a gate connecting layer formed out of a same conductive film as the gate electrode;

a source connecting layer formed out of a same conductive film as the source electrode;

a first transparent electrode that contains an impurity at a higher concentration than the oxide semiconductor layer and is electrically connected to the drain electrode;

an interlayer insulating layer formed over the source and drain electrodes, a first portion of the interlayer insulating layer that is located on the first transparent electrode contains an impurity at a higher concentration than a second portion thereof;

a second transparent electrode formed on the interlayer insulating layer; and

a transparent connecting layer formed out of a same conductive film as the second transparent electrode,

wherein the source connecting layer is electrically connected to the gate connecting layer via the transparent connecting layer, and

the oxide semiconductor layer and the first transparent electrode are formed out of a same oxide film.

2. The semiconductor device of claim 1, wherein the gate insulating layer is formed on the gate connecting layer, the source connecting layer contacts with an upper surface of an oxide layer formed out of the oxide film, the gate insulating layer and the interlayer insulating layer have a contact hole which overlaps with the gate connecting layer when viewed along a normal to the substrate, portions of the source connecting layer and the oxide layer contact with each other inside the contact hole, and an electrical resistance of a portion of the oxide layer which contacts with the transparent connecting layer inside the contact hole is lower than an electrical resistance of the oxide semiconductor layer.

3. The semiconductor device of claim 1, wherein an end portion of the source connecting layer is arranged over the gate connecting layer.

4. The semiconductor device of claim 1, wherein the second transparent electrode overlaps with the first transparent electrode with the interlayer insulating layer interposed between them.

5. The semiconductor device of claim 1, wherein the oxide film includes In, Ga and Zn.