Semiconductor light emitting device, manufacturing method thereof, and semiconductor light emitting device package using the same
First Claim
1. A semiconductor light emitting device comprising:
- a semiconductor stack having first and second main surfaces opposing each other, and comprising first and second conductivity-type semiconductor layers respectively defining the first and second main surfaces, and an active layer interposed between the first and second conductivity-type semiconductor layers;
a plurality of contact holes penetrating the second conductivity-type semiconductor layer and the active layer;
a first electrode layer disposed on the second main surface of the semiconductor stack, the first electrode layer extending and being connected to one region of the first conductivity-type semiconductor layer through the contact holes;
a second electrode layer disposed between the semiconductor stack and the first electrode layer and connected to the second conductivity-type semiconductor layer; and
first and second interconnected bumps comprising;
first and second under bump metallurgy (UBM) layers respectively connected to the first and second electrode layers;
first and second intermetallic compound (IMC) layers respectively disposed on the first and the second UBM layers;
first and second solder bumps respectively disposed on the first and second IMC layers,wherein the solder bumps are bonded to the UBM layers by the IMC layers; and
first and second barrier layers covering lateral surfaces of the first and second UBM layers respectively,wherein the first and second interconnected bumps are disposed opposite to the first main surface.
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Abstract
There is provided a semiconductor light emitting device comprising a semiconductor stack having first and second main surfaces opposing each other, and comprising first and second conductivity-type semiconductor layers respectively defining the first and second main surfaces, and an active layer interposed between the first and second conductivity-type semiconductor layers; a plurality of contact holes penetrating the second conductivity-type semiconductor layer and the active layer, and one region of the first conductivity-type semiconductor layer; a first electrode layer disposed on the second main surface of the semiconductor stack, the first electrode layer extending and being connected to the one region of the first conductivity-type semiconductor layer through the contact holes; a second electrode layer disposed between the semiconductor stack and the first electrode layer and connected to the second conductivity-type semiconductor layer; and first and second interconnected bumps.
70 Citations
20 Claims
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1. A semiconductor light emitting device comprising:
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a semiconductor stack having first and second main surfaces opposing each other, and comprising first and second conductivity-type semiconductor layers respectively defining the first and second main surfaces, and an active layer interposed between the first and second conductivity-type semiconductor layers; a plurality of contact holes penetrating the second conductivity-type semiconductor layer and the active layer; a first electrode layer disposed on the second main surface of the semiconductor stack, the first electrode layer extending and being connected to one region of the first conductivity-type semiconductor layer through the contact holes; a second electrode layer disposed between the semiconductor stack and the first electrode layer and connected to the second conductivity-type semiconductor layer; and first and second interconnected bumps comprising; first and second under bump metallurgy (UBM) layers respectively connected to the first and second electrode layers; first and second intermetallic compound (IMC) layers respectively disposed on the first and the second UBM layers; first and second solder bumps respectively disposed on the first and second IMC layers, wherein the solder bumps are bonded to the UBM layers by the IMC layers; and
first and second barrier layers covering lateral surfaces of the first and second UBM layers respectively,wherein the first and second interconnected bumps are disposed opposite to the first main surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A semiconductor light emitting device having a first conductivity-type semiconductor layer, an active layer, a second conductivity-type semiconductor layer, a second electrode layer, a multilayered reflective structure, a first electrode layer, and a support substrate sequentially laminated, wherein:
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the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity-type semiconductor layer; the first electrode layer comprises at least one contact hole electrically connected to the first conductivity-type semiconductor layer, electrically insulated from the second conductivity-type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity-type semiconductor layer; and the multilayered reflective structure covering lateral surfaces of the at least one contact hole located between the at least one contact hole and the active layer, and the multilayered reflective structure exposing bottom surfaces of the at least one contact hole, wherein the multilayered reflective structure comprises a plurality of insulating layers, and wherein the plurality of insulating layers having different refractive indices are alternately stacked. - View Dependent Claims (13, 14, 15, 16, 17)
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18. A semiconductor light emitting device having a first conductivity-type semiconductor layer, an active layer, a second conductivity-type semiconductor layer, a second electrode layer, a multilayered reflective structure, a first electrode layer, and a support substrate sequentially laminated, wherein:
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the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity-type semiconductor layer; the first electrode layer comprises at least one contact hole electrically connected to the first conductivity-type semiconductor layer, electrically insulated from the second conductivity-type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity-type semiconductor layer; the multilayered reflective structure disposed between the first electrode layer and the active layer, covering lateral surfaces of the at least one contact hole and exposing bottom surfaces of the at least one contact hole, wherein the multilayered reflective structure comprises a plurality of insulating layers, and wherein the plurality of insulating layers having different refractive indices are alternately stacked; and the exposed area of the second electrode layer is a region exposed by a via hole formed through the first conductivity-type semiconductor layer, the active layer, and the second conductivity-type semiconductor layer. - View Dependent Claims (19, 20)
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Specification