Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (MTJ)

• US 9,379,314 B2
• Filed: 12/17/2013
• Issued: 06/28/2016
• Est. Priority Date: 12/17/2013
• Status: Active Grant

• Current Assignee: Qualcomm, Inc.
• Original Assignee: Qualcomm, Inc.
• Inventors: Park, Chando, Lee, Kangho, Kang, Seung Hyuk
• Primary Examiner(s): MENZ, DOUGLAS M
• Application Number:
  US14/109,234
• Publication Number:
  US 20150171316A1
• Time in Patent Office: 924 Days
• Field of Search: 257/421
• US Class Current: 1/1
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/80 Constructional details
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

A magnetic tunnel junction (MTJ) device includes a free layer. The MTJ also includes a barrier layer coupled to the free layer. The MTJ also has a fixed layer, coupled to the barrier layer. The fixed layer includes a first synthetic antiferromagnetic (SAF) multilayer having a first perpendicular magnetic anisotropy (PMA) and a first damping constant. The fixed layer also includes a second SAF multilayer having a second perpendicular magnetic anisotropy (PMA) and a second damping constant lower than the first damping constant. The first SAF multilayer is closer to the barrier layer than the second SAF multilayer. The fixed layer also includes a SAF coupling layer between the first and the second SAF multilayers.

Claims

1. A magnetic tunnel junction (MTJ) device, comprising:

a free layer;

a barrier layer, coupled to the free layer;

a reference layer coupled to the barrier layer; and

a fixed layer, coupled to the reference layer, the fixed layer comprising;

a hybrid first synthetic antiferromagnetic (SAF) multilayer structure having a first perpendicular magnetic anisotropy (PMA) and a first damping constant, the hybrid first SAF multilayer structure comprising a first multilayer stack of a first material layer and a second material layer arranged in a first alternating pattern and a second multilayer stack of the first material layer and a third material layer arranged in a second alternating pattern;

a second SAF multilayer stack having a second perpendicular magnetic anisotropy (PMA) and a second damping constant lower than the first damping constant, the second SAF multilayer being closer to the barrier layer than the hybrid first SAF multilayer structure; and

an SAF coupling layer between the hybrid first SAF multilayer structure and the second SAF stack, in which the second PMA is lower than the first PMA.

2. The MTJ device of claim 1, in which the SAF coupling layer comprises ruthenium.

3. The MTJ device of claim 1, in which the first multilayer stack of the hybrid first SAF multilayer structure comprises a cobalt platinum multilayer stack.

4. The MTJ device of claim 1, in which the first multilayer stack of the hybrid first SAF multilayer structure comprises a cobalt palladium multilayer stack.

5. The MTJ device of claim 1, in which the second SAF multilayer stack comprises a cobalt nickel multilayer stack.

6. The MTJ device of claim 1, in which the first multilayer stack of the hybrid first SAF multilayer structure comprises a cobalt platinum multilayer stack and the second multilayer stack of the hybrid first SAF multilayer stack comprises a cobalt nickel multilayer stack.

7. The MTJ device of claim 6, in which the second SAF multilayer stack comprises a cobalt nickel multilayer stack.

8. The MTJ device of claim 1 integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.

9. A magnetic tunnel junction (MTJ) device, comprising:

a free layer;

a barrier layer, coupled to the free layer;

a reference layer coupled to the barrier layer; and

a fixed layer, coupled to the reference layer, the fixed layer comprising;

a hybrid first synthetic antiferromagnetic (SAF) multilayer structure having a first perpendicular magnetic anisotropy (PMA) and a first damping constant, the hybrid first SAF multilayer structure comprising a first multilayer stack of a first material layer and a second material layer arranged in a first alternating pattern and a second multilayer stack of the first material layer and a third material layer arranged in a second alternating pattern;

means for providing a second perpendicular magnetic anisotropy (PMA) and a second damping constant lower than the first damping constant, the second providing means being closer to the barrier layer than the hybrid first SAF multilayer structure; and

means for coupling the hybrid first SAF multilayer structure and the second providing means, in which the second PMA is lower than the first PMA.

10. The MTJ device of claim 9 integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.