Method of strain engineering and related optical device using a gallium and nitrogen containing active region
First Claim
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1. A method for fabricating an optical device comprising:
- providing a gallium and nitrogen containing substrate including a surface region and a first lattice constant;
forming a strained region overlying the surface region, the strained region having a second lattice constant, the second lattice constant being larger than the first lattice constant;
forming a strain control region having a third lattice constant, the third lattice constant being substantially equivalent to the second lattice constant, the strain control region being configured to maintain at least a quantum well region within a predetermined strain state;
forming an optical confinement region overlying the strain control region; and
forming a plurality of quantum well regions overlying the optical confinement region, each of the plurality of quantum well regions having a fourth lattice constant, the fourth lattice constant being substantially equivalent to the second lattice constant, whereupon the strain control region has a higher bandgap than the strained region and the quantum well regions.
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Abstract
An optical device has a gallium and nitrogen containing substrate including a surface region and a strain control region, the strain control region being configured to maintain a quantum well region within a predetermined strain state. The device also has a plurality of quantum well regions overlying the strain control region.
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16 Claims
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1. A method for fabricating an optical device comprising:
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providing a gallium and nitrogen containing substrate including a surface region and a first lattice constant; forming a strained region overlying the surface region, the strained region having a second lattice constant, the second lattice constant being larger than the first lattice constant; forming a strain control region having a third lattice constant, the third lattice constant being substantially equivalent to the second lattice constant, the strain control region being configured to maintain at least a quantum well region within a predetermined strain state; forming an optical confinement region overlying the strain control region; and forming a plurality of quantum well regions overlying the optical confinement region, each of the plurality of quantum well regions having a fourth lattice constant, the fourth lattice constant being substantially equivalent to the second lattice constant, whereupon the strain control region has a higher bandgap than the strained region and the quantum well regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification