Manufacturable laser diode
First Claim
1. A method for manufacturing laser diode devices, the method comprising:
- providing a substrate having a surface region;
forming an epitaxial material overlying the surface region, the epitaxial material comprising a release region, an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region;
patterning the epitaxial material to form a plurality of epitaxial dice, each of the epitaxial dice corresponding to at least one laser diode device;
transferring at least some of the plurality of epitaxial dice from the substrate to a carrier wafer by selectively etching the release region, separating from the substrate the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer the epitaxial dice that are being transferred; and
thereafterprocessing the transferred epitaxial dice on the carrier wafer to form the laser diode devices, wherein the processing includes forming at least one laser ridge on each of the epitaxial dice.
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Accused Products
Abstract
A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.
256 Citations
37 Claims
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1. A method for manufacturing laser diode devices, the method comprising:
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providing a substrate having a surface region; forming an epitaxial material overlying the surface region, the epitaxial material comprising a release region, an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region; patterning the epitaxial material to form a plurality of epitaxial dice, each of the epitaxial dice corresponding to at least one laser diode device; transferring at least some of the plurality of epitaxial dice from the substrate to a carrier wafer by selectively etching the release region, separating from the substrate the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer the epitaxial dice that are being transferred; and
thereafterprocessing the transferred epitaxial dice on the carrier wafer to form the laser diode devices, wherein the processing includes forming at least one laser ridge on each of the epitaxial dice. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37)
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Specification