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Manufacturable laser diode

  • US 9,379,525 B2
  • Filed: 06/23/2014
  • Issued: 06/28/2016
  • Est. Priority Date: 02/10/2014
  • Status: Active Grant
First Claim
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1. A method for manufacturing laser diode devices, the method comprising:

  • providing a substrate having a surface region;

    forming an epitaxial material overlying the surface region, the epitaxial material comprising a release region, an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region;

    patterning the epitaxial material to form a plurality of epitaxial dice, each of the epitaxial dice corresponding to at least one laser diode device;

    transferring at least some of the plurality of epitaxial dice from the substrate to a carrier wafer by selectively etching the release region, separating from the substrate the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer the epitaxial dice that are being transferred; and

    thereafterprocessing the transferred epitaxial dice on the carrier wafer to form the laser diode devices, wherein the processing includes forming at least one laser ridge on each of the epitaxial dice.

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