Dielectric composition and multilayer ceramic electronic component manufactured using the same

• US 9,382,162 B2
• Filed: 03/15/2013
• Issued: 07/05/2016
• Est. Priority Date: 09/28/2012
• Status: Active Grant

• Current Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Original Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Inventors: Kang, Sung Hyung, Kim, Doo Young, Choi, Chang Hak
• Primary Examiner(s): GROUP, KARL E
• Application Number:
  US13/842,764
• Publication Number:
  US 20140092525A1
• Time in Patent Office: 1,208 Days
• Field of Search: 501134-139
• US Class Current: 1/1
• CPC Class Codes: C04B 2235/3208 Calcium oxide or oxide-forming salts thereof, e.g. lime
• CPC Class Codes: C04B 2235/3215 Barium oxides or oxide-forming salts thereof
• CPC Class Codes: C04B 2235/3224 Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
• CPC Class Codes: C04B 2235/3225 Yttrium oxide or oxide-forming salts thereof
• CPC Class Codes: C04B 2235/3227 Lanthanum oxide or oxide-forming salts thereof
• CPC Class Codes: C04B 2235/3229 Cerium oxides or oxide-forming salts thereof
• CPC Class Codes: C04B 2235/3236 Alkaline earth titanates
• CPC Class Codes: C04B 2235/3249 containing also titanium oxide or titanates, e.g. lead zirconate titanate (PZT)
• CPC Class Codes: C04B 2235/3289 Noble metal oxides
• CPC Class Codes: C04B 2235/79 Non-stoichiometric products, e.g. perovskites (ABO3) with an A/B-ratio other than 1
• CPC Class Codes: C04B 35/4682 based on BaTiO3 perovskite phase
• CPC Class Codes: C04B 35/49 containing also titanium oxides or titanates
• CPC Class Codes: C04B 35/62815 Rare earth metal oxides
• CPC Class Codes: H01G 4/008 Selection of materials
• CPC Class Codes: H01G 4/1227 based on alkaline earth titanates
• CPC Class Codes: H01G 4/1236 based on zirconium oxides or zirconates H01G4/1263 takes precedence
• CPC Class Codes: H01G 4/30 Stacked capacitors H01G4/33 takes precedence

Abstract

There are provided a dielectric composition and a multilayer ceramic electronic component manufactured using the same, the dielectric composition including a dielectric grain having a perovskite structure represented by ABO₃, wherein, when an imaginary line is drawn in a direction from a center of the dielectric grain to a grain boundary thereof, a content of rare earth elements in a region corresponding to 0.75 to 0.95% of the dielectric grain from the center of the dielectric grain may be 0.5 to 2.5 at %, based on 100 at % of a B-site ion, so that the multilayer ceramic electronic component manufactured using the dielectric composition can have excellent reliability and secure a high dielectric constant.

Claims

1. A dielectric composition, comprising a dielectric grain having a perovskite structure represented by ABO₃,

when a minor axis of the dielectric grain is a conceptual line between two peak points of the dielectric grain in a shorter distance thereof, and a major axis of the dielectric grain is a conceptual line between two peak points of the dielectric grain in a longer distance thereof, a center of the dielectric grain is an intersection point of the minor axis and the major axis,

wherein, when an imaginary line is drawn in a direction from the center of the dielectric grain to a grain boundary thereof, a content of rare earth elements in a center portion of the dielectric grain is 0.05 to 2.0 at %,

content of rare earth elements across an entire region corresponding to 75 to 95% of the dielectric grain from the center of the dielectric grain is 0.5 to 2.5 at %, based on 100 at % of a B-site ion, and

the content of rare earth elements in the region corresponding to 75 to 95% of the dielectric grain from the center of the dielectric grain is 0.05 to 2.0 times a content of rare earth elements in the center portion of the dielectric grain.

2. The dielectric composition of claim 1, wherein the A includes one or more selected from a group consisting of barium (Ba), strontium (Sr), lead (Pb), and calcium (Ca).

3. The dielectric composition of claim 1, wherein the B includes one or more selected from a group consisting of titanium (Ti) and zirconium (Zr).

4. The dielectric composition of claim 1, wherein the rare earth elements include a trivalent ion.

5. The dielectric composition of claim 1, wherein the rare earth elements include one or more selected from a group consisting of scandium (Sc), yttrium (Y), lanthanum (La), actinium (Ac), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and ruthenium (Ru).

6. The dielectric composition of claim 1, wherein the dielectric grain includes one or more selected from a group consisting of Ba_mTiO₃ (0.995≦

m≦

1.010), (Ba_1-XCa_x)_m(Ti_1-yZr_y)O₃ (0.995≦

m≦

1.010, 0≦

x≦

0.10, 0≦

y≦

0.20), and Ba_m(Ti_1-xZr_x)O₃ (0.995≦

m≦

1.010, x≦

0.10); and

Ba_mTiO₃ (0.995≦

m≦

1.010), (Ba_1-XCa_x)_m(Ti_1-yZr_y)O₃ (0.995≦

m≦

1.010, 0≦

x≦

0.10, 0≦

y≦

0.20), and Ba_m(Ti_1-xZr_x)O₃ (0.995≦

m≦

1.010, x≦

0.10), in which one or more rare earth elements are partially dissolved.

7. A multilayer ceramic electronic component, comprising:

a ceramic body including dielectric layers each having an average thickness of 0.48 μ

m or less; and

internal electrodes disposed to face each other with the dielectric layer therebetween within the ceramic body,

wherein the dielectric layer includes a dielectric composition, the dielectric composition including a dielectric grain having a perovskite structure represented by ABO₃, when a minor axis of the dielectric grain is a conceptual line between two peak points of the dielectric grain in a shorter distance thereof, and a major axis of the dielectric grain is a conceptual line between two peak points of the dielectric grain in a longer distance thereof, a center of the dielectric grain is an intersection point of the minor axis and the major axis, in which, when an imaginary line is drawn in a direction from the center of the dielectric grain to a grain boundary thereof, a content of rare earth elements in a center portion of the dielectric grain is 0.05 to 2.0 at %,

a content of rare earth elements across an entire region corresponding to 75 to 95% of the dielectric grain from the center of the dielectric grain is 0.5 to 2.5 at %, based on 100 at % of a B-site ion, and

the content of rare earth elements in the region corresponding to 75 to 95% of the dielectric grain from the center of the dielectric grain is 0.05 to 2.0 times a content of rare earth elements in the center portion of the dielectric grain.

8. The multilayer ceramic electronic component of claim 7, the A includes one or more selected from a group consisting of barium (Ba), strontium (Sr), lead (Pb), and calcium (Ca).

9. The multilayer ceramic electronic component of claim 7, wherein the B includes one or more selected from a group consisting of titanium (Ti) and zirconium (Zr).

10. The multilayer ceramic electronic component of claim 7, wherein the rare earth elements include a trivalent ion.

11. The multilayer ceramic electronic component of claim 7, wherein the rare earth elements include one or more selected from a group consisting of scandium (Sc), yttrium (Y), lanthanum (La), actinium (Ac), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and ruthenium (Ru).

12. The multilayer ceramic electronic component of claim 7, wherein the dielectric grain includes one or more selected from a group consisting of Ba_mTiO₃ (0.995≦

m≦

1.010), (Ba_1-XCa_x)_m(Ti_1-yZr_y)O₃ (0.995≦

m≦

1.010, 0≦

x≦

0.10, 0≦

y≦

0.20), and Ba_m(Ti_1-xZr_x)O₃ (0.995≦

m≦

1.010, x≦

0.10); and

Ba_mTiO₃ (0.995≦

m≦

1.010), (Ba_1-XCa_x)_m(Ti_1-yZr_y)O₃ (0.995≦

m≦

1.010, 0≦

x≦

0.10, 0≦

y≦

0.20), and Ba_m(Ti_1-xZr_x)O₃ (0.995≦

m≦

1.010, x≦

0.10), in which one or more rare earth elements are partially dissolved.

13. The multilayer ceramic electronic component of claim 7, wherein the dielectric layer has a dielectric constant of 4000 or greater.