Sulfur containing organosilane precursors for ALD/CVD silicon-containing film applications

• US 9,382,268 B1
• Filed: 07/21/2014
• Issued: 07/05/2016
• Est. Priority Date: 07/19/2013
• Status: Active Grant

• Current Assignee: American Air Liquide Incorporated (L'Air Liquide SA)
• Original Assignee: American Air Liquide Incorporated (L'Air Liquide SA)
• Inventors: Kuchenbeiser, Glenn, Pallem, Venkateswara R.
• Primary Examiner(s): Gambetta, Kelly M
• Application Number:
  US14/336,536
• Time in Patent Office: 715 Days
• Field of Search: 427/248.1, 427/255.28
• US Class Current: 1/1
• CPC Class Codes: C07F 7/025 without C-silicon linkages
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD

Abstract

Disclosed are sulfur containing organosilane precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel-type devices, refractory materials, or aeronautics. The disclosed precursors have the following formula:

wherein L¹ is a sulfur atom and L² may be chosen from a sulfur atom, an oxygen atom, or a nitrogen atom; L¹ and L² are joined together via a carbon bridge having one to three carbon atoms; and L¹, L² and the carbon bridge form a monoanionic ligand bonded to silicon.

Claims

1. A molecule having the following formula:

2. The molecule of claim 1, having the following formula:

3. The molecule of claim 1, having the following formula:

4. The molecule of claim 1, having the following formula:

5. The molecule of claim 1, having the following formula:

6. The molecule of claim 1, having the following formula:

7. The molecule of claim 1, having the following formula:

8. The molecule of claim 1, having the following formula:

9. The molecule of claim 1, having the following formula:

10. The molecule of claim 1, having the following formula:

11. A method of depositing a Si-containing layer on a substrate, the method comprising:

introducing the organosilane precursor of claim 1 into a reactor having a substrate disposed therein;

depositing at least part of the organosilane precursor onto the substrate to form a Si-containing layer using a vapor deposition method.

12. The method of claim 11, further comprising introducing into the reactor a vapor comprising at least one second precursor.

13. The method of claim 12, wherein an element of the at least one second precursor is selected from the group consisting of group 2, group 13, group 14, transition metal, lanthanides, and combinations thereof.

14. The method of claim 13, wherein the element of the at least one second precursor is selected from Mg, Ca, Sr, Ba, Zr, Hf, Ti, Nb, Ta, Al, Si, Ge, Y, or lanthanides.

15. The method of claim 11, further comprising introducing into the reactor at least one co-reactant.

16. The method of claim 15, wherein the co-reactant is selected from the group consisting of O₂, O₃, H₂O, H₂O₂, NO, NO₂, a carboxylic acid, radicals thereof, and combinations thereof, preferably plasma treated oxygen or ozone.

17. The method of claim 16, wherein the Si-containing layer is a silicon oxide layer.

18. The method of claim 15, wherein the co-reactant is selected from the group consisting of H₂, NH₃, (SiH₃)₃N, hydridosilanes (such as SiH₄, Si₂H₆, Si₃H₈, Si₄H₁₀, Si₅H₁₀, Si₆H₁₂), chlorosilanes and chloropolysilanes (such as SiHCl₃, SiH₂Cl₂, SiH₃Cl, Si₂Cl₆, Si₂HCl₅, Si₃Cl₈), alkysilanes (such as Me₂SiH₂, Et₂SiH₂, MeSiH₃, EtSiH₃), hydrazines (such as N₂H₄, MeHNNH₂, MeHNNHMe), organic amines (such as NMeH₂, NEtH₂, NMe₂H, NEt₂H, NMe₃, NEt₃, (SiMe₃)₂NH), pyrazoline, pyridine, B-containing molecules (such as B₂H₆, 9-borabicylo[3,3,1]none, trimethylboron, triethylboron, borazine), alkyl metals (such as trimethylaluminum, triethylaluminum, dimethylzinc, diethylzinc), radical species thereof, and mixtures thereof.

19. The method of claim 18, wherein the co-reactant is selected from the group consisting of H₂, NH₃, SiH₄, Si₂H₆, Si₃H₈, SiH₂Me₂, SiH₂Et₂, N(SiH₃)₃, hydrogen radicals thereof, and mixtures thereof.

20. The method of claim 11, wherein the vapor deposition process is a chemical vapor deposition process.

21. The method of claim 11, wherein the vapor deposition process is an atomic layer deposition process.