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Sputtering target, method for manufacturing sputtering target, and method for forming thin film

  • US 9,382,611 B2
  • Filed: 06/05/2012
  • Issued: 07/05/2016
  • Est. Priority Date: 06/08/2011
  • Status: Active Grant
First Claim
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1. A method for manufacturing a sputtering target comprising the steps of:

  • obtaining a mixed material by mixing an InOX raw material, a MOY raw material, and a ZnOZ raw material, M being one of Ga, Sn, Hf, Al, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu;

    forming an In-M-Zn—

    O compound powder by performing a first baking to the mixed material and then grinding the mixed material;

    spreading part of the In-M-Zn—

    O compound powder in a mold;

    forming a compound film by performing a second baking and a first pressure treatment on the part of the In-M-Zn—

    O compound powder spread in the mold;

    spreading another part of the In-M-Zn—

    O compound powder over the compound film in the mold; and

    performing a third baking and a second pressure treatment on the another part of the In-M-Zn—

    O compound powder and the compound film in the mold,wherein the first baking is performed in a first atmosphere and then in a second atmosphere,wherein the first atmosphere is an inert atmosphere or a reduced-pressure atmosphere, andwherein the second atmosphere is an oxidation atmosphere.

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