Semiconductor device and communication system
First Claim
1. A semiconductor device comprising:
- a plastic substrate;
an adhesive agent over the plastic substrate;
a crystallized metal oxide comprising tungsten over the adhesive agent; and
a processor over the crystallized metal oxide, the processor comprising;
an integrated circuit comprising a voltage generation circuit and an arithmetic processing means; and
an antenna connected to the voltage generation circuit,wherein the voltage generation circuit, the arithmetic processing means, and the antenna are in a layer which is fixed to the plastic substrate by the adhesive agent,wherein the integrated circuit comprises a thin film transistor,wherein a power supplied from a plurality of reader/writer devices is supplied to the voltage generation circuit through the antenna,wherein the power is supplied to the arithmetic processing means,wherein the arithmetic processing means is configured to perform floating point arithmetic, andwherein a semiconductor film of the thin film transistor has a thickness of from 10 nm to 200 nm.
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Accused Products
Abstract
It is an object of the present invention to provide a semiconductor device in which a sophisticated integrated circuit using a polycrystalline semiconductor is formed over a substrate which is weak with heat such as a plastic substrate or a plastic film substrate and a semiconductor device which transmits/receives power or a signal without wires, and a communication system thereof. One feature of the invention is that a semiconductor device, specifically, a processor, in which a sophisticated integrated circuit is fixed to a plastic substrate which is weak with heat by a stripping method such as a stress peel of process method to transmit/receive power or a signal without wires, for example, with an antenna or a light receiving element.
35 Citations
22 Claims
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1. A semiconductor device comprising:
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a plastic substrate; an adhesive agent over the plastic substrate; a crystallized metal oxide comprising tungsten over the adhesive agent; and a processor over the crystallized metal oxide, the processor comprising; an integrated circuit comprising a voltage generation circuit and an arithmetic processing means; and an antenna connected to the voltage generation circuit, wherein the voltage generation circuit, the arithmetic processing means, and the antenna are in a layer which is fixed to the plastic substrate by the adhesive agent, wherein the integrated circuit comprises a thin film transistor, wherein a power supplied from a plurality of reader/writer devices is supplied to the voltage generation circuit through the antenna, wherein the power is supplied to the arithmetic processing means, wherein the arithmetic processing means is configured to perform floating point arithmetic, and wherein a semiconductor film of the thin film transistor has a thickness of from 10 nm to 200 nm. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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a plastic substrate; an adhesive agent over the plastic substrate; a crystallized metal oxide comprising tungsten over the adhesive agent; and a processor over the crystallized metal oxide, the processor comprising; an integrated circuit comprising a voltage generation circuit and an arithmetic processing means; an antenna connected to the voltage generation circuit; and a photodiode, wherein the voltage generation circuit, the arithmetic processing means, the antenna, and the photodiode are in a layer which is fixed to the plastic substrate by the adhesive agent, wherein the integrated circuit comprises a thin film transistor, wherein a power supplied from a plurality of reader/writer devices is supplied to the voltage generation circuit through the antenna, wherein the power is supplied to the arithmetic processing means, wherein the arithmetic processing means is configured to perform floating point arithmetic, and wherein a semiconductor film of the thin film transistor has a thickness of from 10 nm to 200 nm. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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19. A semiconductor device comprising:
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a plastic substrate; an adhesive agent over the plastic substrate; a crystallized metal oxide comprising tungsten over the adhesive agent; and a plurality of processors over the crystallized metal oxide, each of the plurality of processors comprising; an integrated circuit comprising a voltage generation circuit and an arithmetic processing means; and an antenna connected to the voltage generation circuit, wherein the plurality of processors are in a layer which is fixed to the plastic substrate by the adhesive agent, wherein the integrated circuit comprises a thin film transistor, wherein a power supplied from a reader/writer device is supplied to the voltage generation circuit through the antenna, wherein the power is supplied to the arithmetic processing means, wherein the arithmetic processing means is configured to perform floating point arithmetic, and wherein a semiconductor film of the thin film transistor has a thickness of from 10 nm to 200 nm. - View Dependent Claims (20, 21, 22)
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Specification