Method compensation operating voltage, flash memory device, and data storage device

• US 9,384,840 B2
• Filed: 02/24/2014
• Issued: 07/05/2016
• Est. Priority Date: 11/25/2010
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Choi, Yoon Hee, Park, Ki Tae, Kim, Bo Geun
• Primary Examiner(s): DINH, SON T
• Application Number:
  US14/187,362
• Publication Number:
  US 20140169101A1
• Time in Patent Office: 862 Days
• Field of Search: 365/211, 365/185.18, 365/185.2
• US Class Current: 1/1
• CPC Class Codes: G11C 16/10 Programming or data input circuits
• CPC Class Codes: G11C 16/26 Sensing or reading circuits; Data output circuits
• CPC Class Codes: G11C 16/30 Power supply circuits
• CPC Class Codes: G11C 7/04 with means for avoiding disturbances due to temperature effects

Abstract

Disclosed is a method generating a compensated operating voltage, such as a read voltage, in a non-volatile memory device, and a related non-volatile memory device. The operating voltage is compensated in response to one or more memory cell conditions such as temperature variation, programmed data state or physical location of a selected memory cell, page information for selected memory cell, or the location of a selected word line.

Claims

1. A method generating an operating voltage in a non-volatile memory device including a memory cell array of non-volatile memory cells, the method comprising:

detecting a current temperature for the non-volatile memory device;

generating the operating voltage to be applied to a selected memory cell in the memory cell array according to a programmed data state of the selected memory cell; and

compensating the operating voltage according to the current temperature of the non-volatile memory device and according to the programmed data state of the selected memory cell, wherein a compensation amount of the operating voltage at the current temperature is dependent on the programmed data state.

2. The method of claim 1, wherein the operating voltage is one of a read voltage used to discriminate a threshold voltage distribution for the selected memory cell during a read operation performed by the non-volatile memory device, and a read verification voltage used to discriminate a threshold voltage distribution for the selected memory cell during a program operation performed by the non-volatile memory device.

3. The method of claim 2, wherein the read voltage is configured to be applied to a selected word line associated with the selected memory cell and the read verification voltage is configured to be applied to the selected word line associated with the selected memory cell.

4. The method of claim 1, wherein the operating voltage is configured to be applied to the selected memory cell in the memory cell array during a program operation performed by the non-volatile memory device.

5. A method generating an operating voltage in a non-volatile memory device including a memory cell array of non-volatile memory cells, the method comprising:

detecting a current temperature for the non-volatile memory device;

generating the operating voltage to be applied to a selected memory cell in the memory cell array according to a programmed data state of the memory cell; and

compensating the operating voltage according to the current temperature of the non-volatile memory device and according to a location of a selected word line associated with the selected memory cell relative to other word lines in the memory cell array, wherein a compensation amount of the operating voltage at the current temperature is dependent on the location of the selected word line,

wherein the operating voltage is configured to being applied to the selected word line associated with the selected memory cell in the memory cell array.

6. The method of claim 5, wherein the operating voltage is one of a read voltage used to discriminate a threshold voltage distribution for the selected memory cell during a read operation performed by the non-volatile memory device, and a read verification voltage used to discriminate a threshold voltage distribution for the selected memory cell during a program operation performed by the non-volatile memory device.

7. The method of claim 6, wherein the operating voltage is configured to be applied to the selected word line during a program operation.

8. A non-volatile memory device comprising:

a control logic that controls operation of the non-volatile memory device;

a memory cell array of nonvolatile memory cells; and

an operating voltage generator that generates a compensated operating voltage to be applied to a selected memory cell in the memory cell array,

wherein the operating voltage generator is configured to generate the compensated operating voltage according to a current temperature of the non-volatile device and according to a programmed data state of the selected memory cell, wherein a compensation amount of the operating voltage at the current temperature is dependent on the programmed data state.

9. The non-volatile memory device of claim 8, wherein the operating voltage generator is configured to detect the current temperature for the non-volatile memory device.

10. The non-volatile memory device of claim 8, wherein the compensated operating voltage is one of a read voltage used to discriminate a threshold voltage distribution for the selected memory cell during a read operation performed by the non-volatile memory device, and a read verification voltage used to discriminate a threshold voltage distribution for the selected memory cell during a program operation performed by the non-volatile memory device.

11. The non-volatile memory device of claim 10, wherein the read voltage is configured to be applied to a selected word line associated with the selected memory cell and the read verification voltage is configured to be applied to the selected word line associated with the selected memory cell.

12. The non-volatile memory device of claim 8, wherein the compensated operating voltage is configured to be applied to the selected memory cell during a program operation.

13. A non-volatile memory device comprising:

a control logic that controls operation of the non-volatile memory device;

a memory cell array of nonvolatile memory cells; and

an operating voltage generator that generates a compensated operating voltage to be applied to a selected word line associated with a selected memory cell in the memory cell array,

wherein the operating voltage generator is configured to generate the compensated operating voltage according to a current temperature of the non-volatile device and according to a location of the selected word line associated with the selected memory cell relative to other word lines in the memory cell array, wherein a compensation amount of the operating voltage at the current temperature is dependent on the location of the selected word line.

14. The non-volatile memory device of claim 13, wherein the operating voltage generator is configured to detect the current temperature for the non-volatile memory device.

15. The non-volatile memory device of claim 13, wherein the compensated operating voltage is one of a read voltage used to discriminate a threshold voltage distribution for the selected memory cell during a read operation performed by the non-volatile memory device, and a read verification voltage used to discriminate a threshold voltage distribution for the selected memory cell during a program operation performed by the non-volatile memory device.

16. The non-volatile memory device of claim 13, wherein the compensated operating voltage is configured to be applied to the selected word line during a program operation.

17. A method generating an operating voltage in a memory system comprising a non-volatile memory device including an operating voltage generator, and a memory cell array of non-volatile memory cells, the method comprising:

upon powering-up the non-volatile memory device and configuring at least one lookup table storing a plurality of compensating offset values using a trim information stored in a trim information region of the memory cell array;

detecting a current temperature for the non-volatile memory device;

after receiving an access command initiating execution of an access operation associated with the access command by the non-volatile memory device, generating a compensated operating voltage by selecting an offset value from the plurality of compensating offset values stored in the at least one lookup table in response to the current temperature; and

performing the access operation using the compensated operating voltage.

18. The method of claim 17, wherein the compensated operating voltage is one of a read voltage used to discriminate a threshold voltage distribution for a selected memory cell in the memory cell array during a read operation performed by the non-volatile memory device, and a read verification voltage used to discriminate a threshold voltage distribution for the selected memory cell in the memory cell array during a program operation performed by the non-volatile memory device.

19. The method of claim 18, wherein the read voltage is configured to be applied to a selected word line associated with the selected memory cell and the read verification voltage is configured to be applied to the selected word line associated with the selected memory cell.

20. The method of claim 17, wherein the compensated operating voltage is configured to be applied to a selected memory cell in the memory cell array during a program operation.

21. A method generating a read voltage in a non-volatile memory device including a memory cell array of non-volatile memory cells, the method comprising:

detecting a current temperature for the non-volatile memory device;

generating the read voltage to be applied to a selected memory cell in the memory cell array; and

compensating the read voltage according to the current temperature of the non-volatile memory device and according to a programmed data state of the selected memory cell, wherein a compensation amount of the operating voltage at the current temperature is dependent on the programmed data state of the selected memory cell.

22. The method of claim 21, wherein the read voltage is configured to be applied to a selected word line associated with the selected memory cell.